t o ? 92 1.emitter 2.base 3.collector jiangsu changjiang elec tronics technology co., ltd to-92 plastic-encap sulate transistors ZTX450 transistor (npn) fea tures z low breakdown voltage z general purpose amplifier transistor maximum ratings (t a =25 unless otherwis e noted) symbol parameter v alue unit v cbo collector-base v oltage 60 v v ceo collector-emitter vo lt age 45 v v ebo emitter-base volt ag e 5 v i c collector curre n t 1 a p c collector pow e r dissipation 625 mw r ja thermal resistance f r om junction to ambient 200 /w t j junction t e mperature 150 t stg storage t e mperature -55~+150 electrical characteristics (t a =25 unless otherwis e specified) parameter symbol test conditions min typ max unit collector -b ase breakdown voltage v (br)cbo i c =100 a, i e =0 60 v collector -emitter b reakdown voltage v (br)ceo * i c =10ma, i b =0 45 v emitter-bas e breakdown voltage v (br) ebo i e =100 a, i c =0 5 v collector cu t-off current i cbo v cb =45v, i e =0 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 0.1 a h fe(1) * v ce =10v, i c =150ma 100 300 dc curren t g ain h fe(2) * v ce =10v, i c =1a 15 collector -emitter satu ration voltage v ce(sat ) * i c =150ma, i b =15ma 0.25 v base-emitte r satu ration voltage v be(sat) * i c =150ma, i b =15ma 1.1 v tra n sition frequency f t v ce =10v,i c =50 m a,f=100mhz 150 mhz collector o utput capacitance c ob v cb =10v, i c =0, f= 1mhz 15 pf *pulse test www.cj-elec.com 1 c , dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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