1 publication order number : NGTB10N60R2DT4G/d www.onsemi.com ? semiconductor component s industries, llc, 2015 january 2015 - rev. 2 ordering information see detailed ordering and shipping info rmation on page 7 of this data sheet. NGTB10N60R2DT4G features ? reverse conducting ii igbt ? igbt v ce (sat)=1.7v (typ) [i c =10a, v ge =15v] ? igbt t f =65ns (typ) ?? diode v f =1.5v (typ) [i f =10a] ?? diode t rr =90ns (typ) ?? 5 ? s short circuit capability applications ? general purpose inverter specifications absolute maximum ratings at ta=25 ? c, unless otherwise specified parameter symbol value unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges ? 20 v collector current (dc) @tc=25 ? c * 2 i c * 1 20 a limited by tjmax @tc=100 ? c * 2 10 a collector current (peak) i cp 40 a pulse width llimited by tjmax diode average output current i o 10 a power dissipation p d 72 w tc=25 ? c (our ideal heat dissipation condition) * 2 junction temperature tj 175 ? c storage temperature tstg ? 55 to +175 ? c note : *1 collector current is calculated from the following formula. ? ? *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. igbt 600v, 10a, n-channel tjmax - tc i c (tc)= r th (j-c) v ce (sat) (i c (tc)) stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. marking diagram electrical connection n-channel 1 3 2 ,4 1:gate 2:collecto r 3:emitter 4:collecto r dpak 1 2 3 4 case 369c
NGTB10N60R2DT4G www.onsemi.com 2 electrical characteristics at ta=25 ? c, unless otherwise specified parameter symbol conditions value unit min typ max collector to emitter breakdown voltage v( br ) ces i c =1ma, v ge =0v 600 v collector to emitter cut off current i ces v ce =600v, v ge =0v tc=25 ? c 10 ? a tc=150 ? c 1 ma gate to emitter leakage current i ges v ge = ? 20v, v ce =0v ? 100 na gate to emitter threshold voltage v ge (th) v ce =20v, i c =160 ? a 4.5 7.0 v collector to emitter saturation voltage v ce ( sat ) v ge =15v, i c =10a tc=25 ? c 1.7 2.1 v tc=100 ? c 1.9 2.3 v forward diode voltage v f i f =10a 1.5 2.1 v input capacitance cies v ce =20v, f=1mhz 1340 pf output capacitance coes 45 pf reverse transfer capacitance cres 33 pf turn-on delay time t d (on) v cc =300v, i c =10a r g =30 ? , l=500 ? h v ge =0v/15v vclamp=400v tc=25 ? c see fig.1, see fig.2 48 ns rise time t r 34 ns turn-on time ton 188 ns turn-off delay time t d (off) 120 ns fall time t f 65 ns turn-off time toff 220 ns turn-on energy eon 412 ? j turn-off energy eoff 140 ? j total gate charge qg v ce =300v, v ge =15v, i c =10a 53 nc gate to emitter charge qge 10 nc gate to collector ?miller? charge qgc 25 nc diode reverse recovery time t rr i f =10a,di/dt=300a/ ? s, v cc =300v, see fig.3 90 ns thermal characteristics at ta=25 ? c, unless otherwise specified parameter symbol conditions value unit thermal resistance igbt (junction to case) rth(j-c) (igbt) tc=25 ? c (our ideal heat dissipation condition) * 2 2.07 ? c/w thermal resistance (junction to ambient) rth(j-a) 100 ? c/w note : *2 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminum. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB10N60R2DT4G www.onsemi.com 3
NGTB10N60R2DT4G www.onsemi.com 4
NGTB10N60R2DT4G www.onsemi.com 5
NGTB10N60R2DT4G www.onsemi.com 6 fig.1 switching time test circuit fig.2 timing chart fig.3 reverse recovery time test circuit 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t off t d (off) t f t r t d (on) t on e off e on v cc NGTB10N60R2DT4G 500 ? h driver igbt dut r g v cc NGTB10N60R2DT4G dut di o de 200 ? h 0.001 0.01 0.1 1.0 r th (j-c) -- pulse time pulse time, pt -- s thermal resistance, r th (j-c) -- oc/w 0.000001 0.00001 2 0.0001 3 57 2 0.001 35 7 23 57 23 57 0.01 2 0.1 35 72 1 357 2 10 357 duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 single pulse reverse recovery time, t rr -- ns t rr -- i f forward current, i f -- a 200 250 150 0 50 100 0 300 515 30 25 40 45 tc=25 c v cc =300v di/dt=300a/ s 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 10 20 35
NGTB10N60R2DT4G www.onsemi.com 7 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. package dimensions unit : mm 1:gate 2:collector 3:emitter 4:collector ordering information device package shipping note NGTB10N60R2DT4G dpak 2500 pcs. / reel pb-free and halogen free dpak (single gauge) case 369c issue e style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. gate 2. drain 3. source 4. drain style 3: pin 1. anode 2. cathode 3. anode 4. cathode style 4: pin 1. cathode 2. anode 3. gate 4. anode style 5: pin 1. gate 2. anode 3. cathode 4. anode style 6: pin 1. mt1 2. mt2 3. gate 4. mt2 style 7: pin 1. gate 2. collector 3. emitter 4. collector style 8: pin 1. n/c 2. cathode 3. anode 4. cathode style 9: pin 1. anode 2. cathode 3. resistor adjust 4. cathode style 10: pin 1. cathode 2. anode 3. cathode 4. anode b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 0.040 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 3.93 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within dimensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 xxxxxx = device code a = assembly location l = wafer lot y = year ww = work week g = pb-free package ayww xxx xxxxxg xxxxxxg alyww discrete ic 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches generic marking diagram* *this information is generic. please refer to device data sheet for actual part marking. *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate construction note 7
|
