1 of 3 200v-1000v 0.7a-2.1a controlled avalanche recti?ers byg50d thru byg50m web site: www.taychipst.com features e-mail: sales@taychipst.com maximum ratings and electrical characteristics glass passivated high maximum operating temperature low leakage current excellent stability guaranteed avalanche energy absorption capability ul 94v-o classified plastic package shipped in 12 mm embossed tape. limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v rrm repetitive peak reverse voltage byg50d - 200 v byg50g - 400 v BYG50J - 600 v byg50k - 800 v byg50m - 1000 v v r continuous reverse voltage byg50d - 200 v byg50g - 400 v BYG50J - 600 v byg50k - 800 v byg50m - 1000 v i f(av) average forward current averaged over any 20 ms period; t tp = 100 c; see fig.2 - 2.1 a averaged over any 20 ms period; al 2 o 3 pcb mounting (see fig.7); t amb =60 c; see fig.3 - 1.0 a averaged over any 20 ms period; epoxy pcb mounting (see fig.7); t amb =60 c; see fig.3 - 0.7 a i fsm non-repetitive peak forward current t = 10 ms half sinewave; t j =t j max prior to surge; v r =v rrmmax - 30 a
2 of 3 e-mail: sales@taychipst.com web site: www.taychipst.com electrical characteristics thermal characteristics notes 1. device mounted on al 2 o 3 printed-circuit board, 0.7 mm thick; thickness of copper 3 35 m m, see fig.7. 2. device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 3 40 m m, see fig.7. for more information please refer to the general part of associated handbook . e rsm non-repetitive peak reverse avalanche energy l = 120 mh; t j =t j max prior to surge; inductive load switched off byg50d to j - 10 mj byg50k and m - 7 mj t stg storage temperature - 65 +175 c t j junction temperature see fig.4 - 65 +175 c symbol parameter conditions min. typ. max. unit v f forward voltage i f =1a; t j =t j max; see fig.5 -- 0.85 v i f = 1 a; see fig.5 -- 1.00 v v (br)r reverse avalanche breakdown voltage i r = 0.1 ma byg50d 300 -- v byg50g 500 -- v BYG50J 700 -- v byg50k 900 -- v byg50m 1100 -- v i r reverse current v r =v rrmmax ; see fig.6 -- 1 m a v r =v rrmmax ; t j = 165 c; see fig.6 -- 100 m a t rr reverse recovery time when switched from i f = 0.5 a to i r = 1 a; measured at i r = 0.25 a; see fig.8 - 2 - m s symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 25 k/w r th j-a thermal resistance from junction to ambient note 1 100 k/w note 2 150 k/w symbol parameter conditions min. max. unit 200v-1000v 0.7a-2.1a controlled avalanche recti?ers byg50d thru byg50m
fig.5 reverse current as a function of junction fig. 4 forward current as a function of forward fig.3 maximum permissible junction temperature fig.2 maximum permissible average forward fig.1 maximum permissible average forward ratings and characteristic curves byg50d thru byg50m 3 of 3 e-mail: sales@taychipst.com web site: www.taychipst.com current as a function of tie-point temperature (including losses due to reverse leakage). handbook, halfpage 0 160 200 0 2 1 4 3 80 120 40 t tp ( c) i f(av) (a) current as a function of ambient temperature handbook, halfpage 0 160 200 0 0.8 1.2 0.4 2.0 1.6 80 120 40 t amb ( c) i f(av) (a) as a function of reverse voltage. handbook, halfpage 200 t j ( c) 0 400 1200 0 800 v r (v) 40 dg jkm 80 120 160 voltage; maximum values. handbook, halfpage 0 1.6 2.0 0 4 6 2 10 8 0.8 1.2 0.4 v f (v) i f (a) temperature; maximum values. handbook, halfpage 200 0 10 3 10 2 10 1 160 120 40 80 ( m a) i r t j ( o c) . 200v-1000v 0.7a-2.1a controlled avalanche recti?ers byg50d thru byg50m
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