to ? 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2SC3415 transistor (npn) features z high breakdown voltage z low collector output capacitance z ideal for chroma circuit maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 50a,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =100a,i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =50a,i c =0 5 v collector cut-off current i cbo v cb =200v,i e =0 0.5 a emitter cut-off current i ebo v eb =4v,i c =0 0.5 a dc current gain h fe v ce =10v, i c =10ma 39 180 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 2 v base-emitter saturation voltage v be(sat) i c =50ma,i b =5ma 1.2 v collector output capacitance c ob v cb =30v,i e =0, f=1mhz 3 pf transition frequency f t v ce =30v,i c =10ma 50 mhz classification of h fe rank m n p range 39-82 56-120 82-180 symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current 0.1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 c , dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
|