sm-8 bipolar transistor h-bridge preliminary data sheet issue a may 1998 features * compact package * low on state losses * low drive requirements * operates up to 70v supply * 1 amp continuous rating partmarking detail C ZHB6792 absolute maximum ratings. parameter symbol npns pnps unit collector-base voltage v cbo 70 -70 v collector-emitter voltage v ceo 70 -70 v emitter-base voltage v ebo 5-5 v peak pulse current i cm 2-2 a continuous collector current i c 1-1 a operating and storage temperature range t j :t stg -55 to +150 c schematic diagram connection diagram ZHB6792 1 2 3 4 8 7 6 5 c 1, c 2 e 1 ,e 4 c 3 ,c 4 b 4 b 1 b 2 e 2 ,e 3 b 3 sm-8 (8 lead sot223) q2 q3 q4 q1 b1 b2 b4 b3 e2, e3 e1, e4 c1, c2 c3, c4
thermal characteristics parameter symbol value unit total power dissipation at t amb = 25c* any single transistor on q1 and q3 on or q2 and q4 on equally p tot 1.25 2 w w derate above 25c* any single transistor on q1 and q3 on or q2 and q4 on equally 10 16 mw/ c mw/ c thermal resistance - junction to ambient* any single transistor on q1 and q3 on or q2 and q4 on equally 100 62.5 c/ w c/ w ZHB6792 100us pulse width transient thermal resistance 0 thermal resistance (c/w) d=1 d=0.2 d=0.1 d=0.05 d=0.5 single pulse d=t1 tp t1 tp 1ms 10ms 100ms 1s 10s 100s 20 40 60 80 100 thermal resistance (c/w) single pulse transient thermal resistance pulse width t1 1ms 100us 0 10ms tp d=t1 tp 1s 100ms d=0.2 d=0.05 d=0.1 10s d=0.5 d=1 100s 10 20 30 40 50 60 t - temperature (c) max power dissipation - (watts) 0 0.5 020 1.5 1.0 2.0 sing le derating curve 40 60 80 100 140 120 160 du al single transistor "on" q1 and q3 or q2 and q4 "on" pd v pcb area comparison power dissapation (w) 0.1 0.1 10 pcb area (inches squared) 110 1 dual transistors ? single transistor dual transistors ? single transistor full copper minimum copper * the power which can be dissipated assuming the device is mounted in a typical manner on a pcb with copper equal to 2 inches square. ?"two devices on" is the standard operating condition for the bridge. eg. opposing npn/pnp pairs rurned on.
ZHB6792 npn transistors electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit test conditions. breakdownvoltages v (br)cbo 70 v i c =100 m a v (br)ceo 70 v i c =10ma* v (br)ebo 5v i e =100 m a cut-off currents i cbo 0.1 m a v cb =55v i ebo 0.1 m a v eb =4v saturation voltages v ce(sat) 0.15 0.5 v v i c =0.1a, i b =0.5ma* i c =1a, i b =10ma* v be(sat) 0.9 v i c =1a, i b =10ma* base-emitter turn-on voltage v be(on) 0.9 v i c =1a, v ce =2v* static forward current transfer ratio h fe 500 400 150 i c =100ma,v ce =2v* i c =500ma, v ce =2v* i c =1a,v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v, f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 12 pf v cb =10v, f=1mhz switching times t on t off 46 1440 ns ns i c =500ma, i b1 =50ma i b2 =50ma, v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%
ZHB6792 pnp transistors electrical characteristics (at t amb = 25c) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -75 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -70 v i c =-10ma* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -0.1 m a v cb =-40v emitter cut-off current i ebo -0.1 m a v eb =-4v collector-emitter saturation voltage v ce(sat) -0.45 -0.5 v v i c =-500ma, i b =-5ma* i c =-1a, i b =-25ma* base-emitter saturation voltage v be(sat) -0.95 v i c =-1a, i b =-25ma* base-emitter turn-on voltage v be(on) -0.75 v i c =-1a, v ce =-2v* static forward current transfer h fe 300 250 200 800 i c =-10ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* transition frequency f t 100 mhz i c =-50ma, v ce =-5v f=50mhz input capacitance c ibo 225 pf v eb =-0.5v, f=1mhz output capacitance c obo 22 pf v cb =-10v, f=1mhz switching times t on t off 35 750 ns ns i c =-500ma, i b1 =-50ma i b2 =-50ma, v cc =-10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2%
pnp transistor typical characteristics i c /i b =10 i c /i b =40 i c /i b =20 i c /i b =100 v ce =2v i c /i b =40 v ce =2v 0.01 0.1 1 10 0.8 0.6 0 1.6 0.01 0.1 1 10 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v ce(sat) v i c i c - collector current (amps) v ce(s at) - (v ol ts ) v ce(sat) v i c i c - collector current (amps) v c e(sat) - (v o lts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - no rma l i sed ga in v be - (v o lts) 750 500 250 h fe - t ypi cal ga i n t amb =25c -55c +25c +100c +175c 0 +100c +25c -55c 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v be(s at) - (v ol ts ) -55c +25c +100c +175c 1.8 1.4 1.2 1.0 0.4 0.2 0.8 0.6 0 1.6 1.8 1.4 1.2 1.0 0.4 0.2 -55c +25c +100c ZHB6792
npn transistor typical characteristics ZHB6792 -55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 v ce(sat) v i c i c - collector current (amps) v ce(sat) - (v ol ts) v ce(sat) v i c i c - collector current (amps) v ce( s at ) - (v olts) i c - collector current (amps) i c - collector current (amps) h fe v i c v be(sat) v i c i c - collector current (amps) v be(on) v i c h fe - norm a li sed gai n v be( s at) - (v olts) v be - (v olts) v ce =2v v ce =2v 1.5k 1k 500 h f e - t ypi cal gai n t amb =25c i c /i b =100 -55c +25c +100c +175c 0 0 -55c +25c +100c +175c i c /i b =100 i c /i b =10 i c /i b =200 i c /i b =100
he e d b e1 lp 45 o 3 c 1 2 3 4 8 7 6 5 e2 a a1 dim millimetres inches min typ max min typ max a C C 1.7 C C 0.067 a1 0.02 C 0.1 0.0008 C 0.004 b C 0.7 C C 0.028 C c 0.24 C 0.32 0.009 C 0.013 d 6.3 C 6.7 0.248 C 0.264 e 3.3 C 3.7 0.130 C 0.145 e1 C 4.59 C C 0.180 C e2 C 1.53 C C 0.060 C he 6.7 C 7.3 0.264 C 0.287 lp 0.9 C C 0.035 C C zetex plc. fields new road, chadderton, oldham, ol9-8np, united kingdom. telephone: (44)161 622 4422 (sales), (44)161 622 4444 (general enquiries) fax: (44)161 622 4420 zetex gmbh zetex inc. zetex (asia) ltd. these are supported by streitfeldstra?e 19 47 mall drive, unit 4 3510 metroplaza, tower 2 agents and distributors in d-81673 mnchen commack ny 11725 hing fong road, major countries world-wide germany usa kwai fong, hong kong ? zetex plc 1998 telefon: (49) 89 45 49 49 0 telephone: (516) 543-7100 telephone:(852) 26100 611 fax: (49) 89 45 49 49 49 fax: (516) 864-7630 fax: (852) 24250 494 internet:http://www.zetex.com this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of su pply of any product or service. ZHB6792
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