http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 mch6604 n-channel power mosfet 50v, 0.25a, 7.8 , dual mcph6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low on-resistance ? ultrahigh-speed switching ? 1.5v drive ? composite type with 2 mosfets contained in a single package, facilitating high-density mounting speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 50 v gate to source voltage v gss 10 v drain current (dc) i d 0.25 a drain current (pulse) i dp pw 10 s, duty cycle 1% 1 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm)1unit 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7022a-006 ordering number : en6459c product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 1 : source1 2 : gate1 3 : drain2 4 : source2 5 : gate2 6 : drain1 mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 tl MCH6604-TL-E fd lot no. lot no. 65 4 12 3 82813 tkim tc-00002988/71112 tkim/52506pe msim tb-00002287/ no.6459-1/6 60100 ts (koto) ta-2459
electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =1ma, v gs =0v 50 v zero-gate voltage drain current i dss v ds =50v, v gs =0v 1 a gate to source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d =50ma 130 180 ms static drain to source on-state resistance r ds (on)1 i d =50ma, v gs =4v 6 7.8 r ds (on)2 i d =30ma, v gs =2.5v 7.1 9.9 r ds (on)3 i d =10ma, v gs =1.5v 10 20 input capacitance ciss v ds =10v, f=1mhz 6.6 pf output capacitance coss 4.7 pf reverse transfer capacitance crss 1.7 pf turn-on delay time t d (on) see speci ed test circuit. 18 ns rise time t r 42 ns turn-off delay time t d (off) 190 ns fall time t f 105 ns total gate charge qg v ds =10v, v gs =10v, i d =100ma 1.57 nc gate to source charge qgs 0.20 nc gate to drain ?miller? charge qgd 0.32 nc diode forward voltage v sd i s =100ma, v gs =0v 0.85 1.2 v switching time test circuit ordering information device package shipping memo MCH6604-TL-E mcph6 3,000pcs./reel pb-free pw=10 s d.c. 1% 4v 0v v in v in p. g 50 g s i d =50ma r l =500 v dd =25v v ou t d mch6604 mch6604 no.6459-2/6
r ds (on) -- i d r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- static drain to source on-state resistance, r ds (on) -- gate to source voltage, v gs -- v drain current, i d -- a r ds (on) -- ta | y fs | -- i d r ds (on) -- i d r ds (on) -- i d static drain to source on-state resistance, r ds (on) -- drain current, i d -- a static drain to source on-state resistance, r ds (on) -- drain current, i d -- a static drain to source on-state resistance, r ds (on) -- ambient temperature, ta -- c drain current, i d -- a forward transfer admittance , | y fs | -- s 0.01 0.1 23 57 23 1.0 10 7 5 3 2 100 7 5 3 2 v gs =2.5v --25 c 25 c 1.0 0.001 0.01 23 57 2 3 10 7 5 3 2 100 7 5 3 2 v gs =1.5v it00058 it00059 --25 c 25 c ta=75 c --60 0 2 4 6 8 10 12 14 --40 --20 0 20 40 60 80 100 120 140 160 i d =30ma, v gs =2.5v i d =50ma, v gs =4.0v 0.01 0.01 0.1 23 57 23 1.0 0.1 7 5 3 2 7 5 3 2 v ds =10v it00060 it00061 ta= --25 c 75 c ta=75 c 25 c 012 6 7 8 9 10 11 12 34 5 6 2 3 4 5 78910 ta=25 c 1.0 0.01 0.1 23 57 23 10 7 5 3 2 100 7 5 3 2 v gs =4v it00056 it00057 i d =30ma 50ma --25 c 25 c ta=75 c i d -- v ds i d -- v gs drain current, i d -- a gate to source voltage, v gs -- v drain to source voltage, v ds -- v drain current, i d -- a 0 0 0.02 0.04 0.06 0.08 0.2 0.10 0.01 0.03 0.05 0.07 0.09 0.4 0.6 0.8 1.0 v gs =1.5v 3.5v 6.0v 2.0v 2.5v 4.0v 3.0v 0 0.5 1.0 1.5 2.0 3.0 2.5 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 v ds =10v ta= - -25 c 75 c 25 c it00054 it00055 mch6604 no.6459-3/6
ciss, coss, crss -- v ds v gs -- qg drain to source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate to source voltage, v gs -- v p d -- ta a s o drain to source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 0.6 0.8 1.0 60 80 100 120 140 160 it01740 23 57 23 57 7 5 3 2 7 5 3 2 2 0.01 0.1 1.0 1.0 10 100 dc operation i dp =1a(pw 10 s) 100 s 1ms 10ms 100ms it01739 operation in this area is limited by r ds (on). i d =0.25a 05 10 10 15 100 7 5 3 2 7 5 3 2 1.0 20 25 30 35 40 45 50 ciss coss crss f=1mhz 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 7 8 9 10 v ds =10v i d =100ma it00064 it00065 ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit sw time -- i d i s -- v sd diode forward voltage, v sd -- v source current, i s -- a drain current, i d -- a switching time, sw time -- ns 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.01 0.1 5 3 2 7 5 3 2 v gs =0v 25 c --25 c ta=75 c 0.01 10 0.1 23 57 1000 100 7 5 3 2 7 5 3 2 v dd =25v v gs =4v t d (off) t d (on) it00062 it00063 t r t f mch6604 no.6459-4/6
outline drawing land pattern example MCH6604-TL-E mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6 mch6604 no.6459-5/6
note on usage : since the mch6604 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. mch6604 ps no.6459-6/6
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