dm th6010lpd document number: d s 38244 rev. 2 - 2 1 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd 60v 175c dual n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d max t c = + 25c 60v 11m ? @ v gs = 10 v 47.6a 16m ? @ v gs = 4.5 v 39.5a description and applications this mosfet is designed to minimize the on - state resistance (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? engine management systems ? body control electronics ? dcdc c onverters features and benefits ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C ensures more reli able and robust end application ? high conversion efficiency ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? an automotive - compliant part is available under separate datasheet ( dm t h60 1 0 lpd q ) mechanical data ? case: powerdi 5060 - 8 (type c) ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.0 97 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t h 6010l pd - 13 powerdi5060 - 8 (type c) 2 , 5 00 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. halogen and antimony free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total br + cl) and <1000ppm antimony compounds. 3. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 4 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information pin out top view equivalent circuit = manufacturers marking s 1 d 1 g1 s 2 g 2 d 1 d 2 d 2 h6 0 10l d yy ww s 1 d 2 d 1 g 2 d 1 d 2 g1 s 2 d 1 s 1 g 1 d 2 s 2 g 2
dm th6010lpd document number: d s 38244 rev. 2 - 2 2 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) t c = + 25c t c = + 10 0c i d 47.6 33.7 a continuous drain current (note 5 ) t a = + 25c t a = + 70c i d 13.1 10.9 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 90 a maximum continuous body diode f orward current (note 6 ) i s 31 a avalanche current , l = 0. 1mh i as a avalanche energy, l = 0. 1mh e as 20 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25 c p d 2. 8 w thermal resistance, junction to ambient (note 5) r ja 53 c/w total power dissipation (note 6 ) t c = + 25 c p d 37.5 w thermal resistance, junction to case (note 6 ) r j c 4 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 6 0 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 48 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 1 ds = v gs , i d = 250 a ds (on) 11 m gs = 10 v, i d = 20 a 16 v gs = 4.5 v, i d = 20 a diode forward voltage v sd gs = 0v, i s = 20 a dynamic characteristics (note 8 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v g s = 4.5 v ) q g ds = 30 v, i d = 20 a total gate charge ( v g s = 10 v ) q g gs gd d( on ) dd = 30 v, v gs = 10 v, i d = 20 a , r g = 3 r d( off ) f rr ? ? f = 20 a, di/dt = 10 0a/s rr ? ? notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 6. thermal resistance from junction to soldering point (on the exposed drain pad). 7 . short duration pulse test used to minimize self - heatin g effect. 8 . guaranteed by design. not subject to product testing.
dm th6010lpd document number: d s 38244 rev. 2 - 2 3 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 2.5v v gs = 3.0v v gs = 3.5v v gs = 4.0v v gs = 4.5v v gs = 10.0v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5 v 150 o c 125 o c 175 o c - 55 o c 25 o c 85 o c 0.006 0.008 0.01 0.012 0.014 0 5 10 15 20 25 30 35 40 45 50 r ds ( on ) , drain - source on - resistance () d , drain - source current (a) figure 3. typical on - resistance vs drain current and gate voltage v gs = 4.5v v gs = 10.0v 0 0.02 0.04 0.06 0.08 0.1 0 4 8 12 16 20 r ds ( on ) , drain - source on - resistance () gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 20a 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 r ds ( on ) , drain - source on - resistance () d , drain current(a) figure 5. typical on - resistance vs drain current and junction temperature v gs = 4.5v - 55 o c 25 o c 85 o c 125 o c 150 o c 175 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 4.5v, i d = 20a v gs = 10v, i d = 20a
dm th6010lpd document number: d s 38244 rev. 2 - 2 4 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd 0 0.004 0.008 0.012 0.016 0.02 - 50 - 25 0 25 50 75 100 125 150 175 r ds ( on ) , drain - source on - r esistance () j , junction temperature ( gs = 4.5v, i d = 20a v gs = 10v, i d = 20a 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 1ma i d = 250 a 0 5 10 15 20 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs current v gs = 0v t j = - 55 o c t j = 25 o c t j = 85 o c t j = 125 o c t j = 150 o c t j = 175 o c 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 45 50 55 60 c t , j unction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f = 1mhz c iss c oss c rss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 v gs (v) q g (nc) figure 11. gate charge v ds = 30v, i d = 20a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) = 175 c = 25 gs = 10v r ds(on) limited p w = 1s p w = 100ms p w = 10ms p w = 1ms p w = 100 s p w = 10 s p w = 1 s
dm th6010lpd document number: d s 38244 rev. 2 - 2 5 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, p ulse duration time (sec) figure 13. transient thermal resistance r jc (t) = r(t) * r jc r jc = 4
dm th6010lpd document number: d s 38244 rev. 2 - 2 6 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 (type c) suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 (type c) powerdi5060 - 8 (type c) dim min max typ a 0.90 1.10 1.00 a1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 1.40 1.60 1.50 d3 - - 3.98 e 6.15 bsc e1 5.75 5.85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k - - 1.27 k1 0.56 - - l 0.51 0.71 0.61 la 0.51 0.71 0.61 l1 0.05 0.20 0.175 l4 - - 0.125 m 3.50 3.71 3.605 x - - 1.400 y - - 1.900 10 12 11 1 6 8 7 all dimensions in mm dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 3.910 x2 1.650 x3 1.650 x4 4.420 y 1.270 y1 1.020 y2 3.810 y3 6.610 detail a 0(4x) seating plane a1 c e 01(4x) d1 e1 d e 1 y x ? 1.000 depth 0.07 0.030 a detail a l k m l1 d2 la e2 b(8x) e/2 1 b1(8x) b2(2x) d2 k1 d3 l4 1 8 y3 x4 y1 y2 x1 g1 x c y(4x) g x2 x3
dm th6010lpd document number: d s 38244 rev. 2 - 2 7 of 7 www.diodes.com may 2016 ? diodes incorporated advance information advanced information d mth6010lpd important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or s ystems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significa nt injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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