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| www.irf.com 1 6/30/05 irf6644 directfet power mosfet directfet isometric applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage fig 2. typical on-resistance vs. drain current descriptionthe irf6644 combines the latest hexfet? power mosfet silicon technology with the advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of an so-8 and only 0.7 mm profile. the directfet package is co mpatible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the irf6644 is optimized for primary side bridge topologies in isolated dc-dc applications, for wide range universal input telecom applications (36v - 75v), and for secondary side synchronous rectification in regulated dc-dc topologies. the reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability i mprovements, and makes this device ideal for high performance isolated dc-dc converters. rohs compliant containing no lead and bromide low profile (<0.7 mm) dual sided cooling compatible ultra low package inductance optimized for high frequency switching ideal for high performance isolated converterprimary switch socket optimized for synchronous rectification low conduction losses compatible with existing surface mount techniques absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a 220 max. 8.3 6082 20 100 10.3 6.2 click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 12mh, r g = 25 ? , i as = 6.2a. 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.00 0.02 0.04 0.06 0.08 t y p i c a l r d s ( o n ) , ( ? ) t j = 25c t j = 125c i d = 6.2a 0 4 8 12 16 20 i d , drain current (a) 9 10 11 12 13 t y p i c a l r d s ( o n ) ( m ? ) t a = 25c v gs = 8.0v v gs = 7.0v v gs = 10v v gs = 15v sh sj sp mz mn v dss v gs r ds(on) 100v max 20v max 10.3m ? @ 10v q g tot q gd v gs(th) 35nc 11.5nc 3.7v downloaded from: http:/// 2 www.irf.com pulse width 400s; duty cycle 2%. repetitive rating; pulse width limited by max. junction temperature. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.11 CCC v/c r ds(on) static drain-to-source on-resistance CCC 10.3 13 m ? v gs(th) gate threshold voltage 2.8 CCC 4.8 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -10 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 15 CCC CCC s q g total gate charge CCC 35 47 q gs1 pre-vth gate-to-source charge CCC 8.0 CCC q gs2 post-vth gate-to-source charge CCC 1.6 CCC nc q gd gate-to-drain charge CCC 11.5 17.3 q godr gate charge overdrive CCC 13 CCC see fig. 17 q sw switch charge (q gs2 + q gd ) CCC 13.1 CCC q oss output charge CCC 17 CCC nc r g gate resistance CCC 1.0 2.0 ? t d(on) turn-on delay time CCC 17 CCC t r rise time CCC 26 CCC t d(off) turn-off delay time CCC 34 CCC ns t f fall time CCC 16 CCC c iss input capacitance CCC 2210 CCC c oss output capacitance CCC 420 CCC pf c rss reverse transfer capacitance CCC 100 CCC c oss output capacitance CCC 2120 CCC c oss output capacitance CCC 240 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 10 (body diode) a i sm pulsed source current CCC CCC 82 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 42 63 ns q rr reverse recovery charge CCC 69 100 nc mosfet symbol r g =6.2 ? v ds = 25v conditions v gs = 0v, v ds = 80v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 6.2a v ds = v gs , i d = 150a v ds = 100v, v gs = 0v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 10.3a t j = 25c, i f = 6.2a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 6.2a, v gs = 0v showing the integral reverse p-n junction diode. i d = 6.2a v ds = 80v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 10v, i d = 6.2a v ds = 50v downloaded from: http:/// www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board (still air). mounted on minimum footprint full size board withmetalized back and with small clip heatsink (still air) with small clip heatsink (still air) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.6784 0.0008617.299 0.57756 17.566 8.94 9.4701 106 absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 45 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r jc junction-to-case CCC 1.4 r j-pcb junction-to-pcb mounted 1.0 CCC 270 -40 to + 150 max. 89 2.8 1.8 surface mounted on 1 in. square cu board, steady state. used double sided cooling , mounting pad. mounted on minimum footprint full size board with metalized back and with small clip heatsink. t c measured with thermocouple incontact with top (drain) of part. r is measured at downloaded from: http:/// 4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical total gate charge vs gate-to-source voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 0.01 0.10 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 10v 60s pulse width t j = 150c t j = 25c t j = -40c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) , ( n o r m a l i z e d ) i d = 10.3a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 6.0v vgs top 15v 10v 8.0v 7.0v bottom 6.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 6.0v vgs top 15v 10v 8.0v 7.0v bottom 6.0v 02 04 06 0 q g total gate charge (nc) 0 4 8 12 16 20 v gs , gate-to-source voltage (v) i d = 6.2a v ds = 50v vds= 20v downloaded from: http:/// www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. ambient temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.0 1.0 2.0 3.0 4.0 5.0 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 25c t j = -40c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.8a 3.3a bottom 6.2a -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250a id = 150a 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) 0.01 0.10 1.00 10.00 100.00 1000.00 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 100msec downloaded from: http:/// 6 www.irf.com d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16c. unclamped inductive waveforms t p v (br)dss i as fig 16b. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1 0.1 % + - downloaded from: http:/// www.irf.com 7 directfet substrate and pcb layout, mn outline (medium size can, n-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. fig 18. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ? ? ? ? ! "# ? $ %&'& & ? " (( ? &'& &)$ ' + - + + + - - - g = gate d = drain s = source d s d d d g s downloaded from: http:/// 8 www.irf.com directfet outline dimension, mn outline (medium size can, n-designation).please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking max 0.250 0.201 0.156 0.018 0.036 0.032 0.056 0.036 0.020 0.051 0.115 0.028 0.003 0.007 min 0.246 0.189 0.152 0.014 0.034 0.031 0.054 0.034 0.019 0.046 0.109 0.023 0.001 0.003 max 6.35 5.05 3.95 0.45 0.92 0.82 1.42 0.92 0.52 1.29 2.91 0.70 0.08 0.17 min 6.25 4.80 3.85 0.35 0.88 0.78 1.38 0.88 0.48 1.16 2.74 0.59 0.03 0.08 code a b c d e f g h j k l m n p dimensions metric imperial note: controlling dimensions are in mm downloaded from: http:/// www.irf.com 9 directfet tape & reel dimension (showing component orientation). data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/05 metric min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 imperial standard option (qty 4800) note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6644). for 1000 parts on 7" reel, order IRF6644TR1 metric imperial tr1 option (qty 1000) min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 0.50 n.c n.c 0.53 n.c n.c reel dimensions downloaded from: http:/// note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:/// |
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