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| i nchange semiconductor isc website isc & iscsemi is registered tr a demark 1 isc silicon npn power transistor 2s d807 description high breakdown voltage - : v cbo = 1 50 0 v ( min ) low collector saturation voltage with to - 3 package minimum lot - to - lot variations for robust device performance and reliable operation. applications designed for high voltage power switching tv horizontal deflection output applications. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltag e 1500 v v ceo collector - e mitter v oltage 800 v v ebo emitter - b ase v oltage 7 v i c collector c urrent - continuous 5 a i c m collector c urrent - p eak 8 a p c collector p ower d issipat i on @ t c =25 50 w t j junction temperature 150 t stg s torage temperature range - 65 - 150
i nchange semiconductor isc website isc & iscsemi is registe red tr a demark 2 isc silicon npn power transistor 2s d807 electrical characteristics t c =25 v (br)ebo e mitter - base breakdown v oltage i e = 1m a ; i c = 0 6 v v (br) ceo collector - e mitter breakdown v oltage i c = 10 m a; i b = 0 800 v v c e( sat ) collector - e mitter s aturation v oltage i c = 4.5 a; i b = 2 a 1.0 v v b e( sat ) base - e mitter s aturation v oltage i c = 4.5 a; i b = 2 a 1.5 v i c b o collector c utoff c urrent v c b = 1500 v ;i b = 0 0.5 m a i ebo emitter c utoff c urrent v eb = 6 v; i c =0 0.1 m a h fe dc c urrent g ain i c = 1 a ; v ce = 5 v 10 36 switching times t on t urn - on time i c = 4.5 a , i b1 = i b 2 = 2 a 1.0 stg s torage time 8.0 t f f all time 2.5 |
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