MSP3401 v ds = -30v,i d = -4.2a r ds(on) < 130m ? @ v gs =-2.5v r ds(on) < 75m ? @ v gs =-4.5v r ds(on) < 55m ? @ v gs =-10v high power and current handing capability lead free product is acquired surface mount package pwm applications load switch power management d g s schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity MSP3401 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 12 v drain current-continuous i d -4.2 a drain current-pulsed (note 1) i dm -30 a maximum power dissipation p d 1.2 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 104 /w -30v(d-s) p-channel enhancement mode power mos fet lead free pin configuration more semiconductor company limited http://www.moresemi.com 1/6 general features application
gate-body leakage current i gss v gs =10v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -0.7 -1 -1.3 v v gs =-10v, i d =-4.2a - 50 55 m ? v gs =-4.5v, i d =-4a - 64 75 m ? drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-1a 95 130 m ? forward transconductance g fs v ds =-5v,i d =-4.2a - 10 - s dynamic characteristics (note4) input capacitance c lss - 950 - pf output capacitance c oss - 115 - pf reverse transfer capacitance c rss v ds =-15v,v gs =0v, f=1.0mhz - 75 - pf switching characteristics (note 4) turn-on delay time t d(on) - 7 - ns turn-on rise time t r - 3 - ns turn-off delay time t d(off) - 30 - ns turn-off fall time t f v dd =-15v,i d =-3.2a v gs =-10v,r gen =6 ? - 12 - ns total gate charge q g - 9.5 - nc gate-source charge q gs - 2 - nc gate-drain charge q gd v ds =-15v,i d =-4a,v gs =-4.5v - 3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1a - - -1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -30 - v zero gate voltage drain current i dss v ds =-24v,v gs =0v - - -1 a more semiconductor company limited http://www.moresemi.com 2/6 MSP3401
typical electrical and thermal characteristics figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) more semiconductor company limited http://www.moresemi.com 3/6 MSP3401
vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/6 MSP3401
vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) more semiconductor company limited http://www.moresemi.com 5/6 MSP3401
sot-23 package information dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. more semiconductor company limited http://www.moresemi.com 6/6 MSP3401
|