dm th4005sk3 q document number: ds 38661 rev. 1 - 2 1 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q 40v +175c n - channel enhancement mode mosfet product summary b v dss r ds(on) max i d t c = + 25c 4 0 v 4.5 m? @ v gs = 10 v 95 a description and applications this mosfet has been designed to meet the stringent requirements of automotive applications. it is qualified to aecq101, s upported by a ppap and is ideal for use in : ? engine management systems ? body control electronics ? dc - dc converters features ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C ensures more reli able and robust end application ? low r ds( on ) C minimizes power losses ? low q g C minimizes switching losses ? lead - free finish ; rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: to25 2 (dpak) ? case m aterial: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 33 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h 4 0 0 5 s k3 q - 13 to252 (dpak) 2 , 5 00/tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. r efer t o http://www.diodes.co m/quality/product_ compliance _definitions/ . 5 . for packaging details, go to our website at http://www.di odes.com/products/packages.html marking information internal schematic top view pin out top view to252 (dpak) h4005s yyww = manufacturer s marking h4005s = product type marking code yyww = date code marking yy = last digit of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) d s g g s d d green
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 2 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q maximum ratings ( @ t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 4 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) t c = +25c (note 10 ) t c = + 10 0c i d 95 73 a maximum body diode forward current (note 7 ) t c = + 25 ? s 150 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm 150 a avalanche current, l=0. 1 mh i as 32.5 a avalanche energy, l=0. 1 mh e as 52.8 mj thermal characteristics characteristic symbol value units total power dissipation (note 6 ) t a = +25c p d 2.1 w thermal resistance, junction to ambient (note 6 ) r ja 38 c/w total power dissipation (note 7 ) t c = +25c p d 100 w thermal resistance, junction to case (note 7 ) r j c 1.5 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 4 0 ? ? gs = 0v, i d = 1m a zero gate voltage drain current i dss ? ? ds = 32 v, v gs = 0v gate - source leakage i gss ? ? gs = 2 0 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 2 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds(on) ? ? gs = 10 v, i d = 50 a diode forward voltage v sd ? ? ? gs = 0v, i s = 5 0 a dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 20 v, v gs = 0v , f = 1 mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge q g ? ? ? d d = 20 v, i d = 50 a , v gs = 10 v gate - source charge q gs ? ? gd ? ? d( on ) ? ? dd = 20 v, v gs = 10 v, i d = 50 a , r g = 3 ? r ? ? d( off ) ? ? f ? ? ? ? rr ? ? f = 50 a, di/dt = 1 0 0a/s rr ? ? ? ? notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . 7 . thermal resistance from junction to soldering point (on the exposed drain pad). 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing . 10 . package limited.
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 3 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 3.5v v gs = 4.0v v gs = 10.0v v gs =4.5v v gs = 5.0v 0.00 1.00 2.00 3.00 4.00 5.00 6.00 0 5 10 15 20 25 30 35 40 45 50 r ds(on) , drain - source on - resistance (m d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10.0v 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance ( m gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 50a 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 10 20 30 40 50 60 70 80 90 100 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature - 55 gs = 10v 175 ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 10v, i d = 50a 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 4 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q 0 0.002 0.004 0.006 0.008 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 10v, i d = 50a 0 10 20 30 40 50 60 70 80 90 100 0 0.3 0.6 0.9 1.2 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c t a = 150 o c 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 10 20 30 40 50 v gs (v) q g (nc) figure 11. gate charge v ds = 20v, i d = 50a 0.1 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10ms p w =100 s r ds(on) limited p w =1ms p w =100ms t j(max) = 175 c = 25 gs = 10v p w =1s p w =10 s p w =1 s 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 d = 1ma
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 5 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q 0.001 0.01 0.1 1 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 1.5
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 6 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q package outline please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0. 64 0. 88 0. 7 83 b2 0. 7 6 1.14 0. 95 b3 5.21 5.46 5.3 3 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 71 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dm th4005sk3 q document number: ds 38661 rev. 1 - 2 7 of 7 www.diodes.com march 2016 ? diodes incorporated dm th4005sk3 q portant notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expe cted to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its sa fety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diod es incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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