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  us1af - US1MF voltage range: 50 - 1000v current: 1.0 a features glass passivated die construction diffused junction ultra-fast recovery time for high efficiency low forward voltage drop, high current capability, and low power loss ideally suited for automated assembly surface mount ultra fast rectifier diodes case: smaf,molded plastic ! ! ! ! ! mechanical data ! ! terminals: solder plated, solderable per mil-std-750, method 2026 ! ! ! polarity:color band denotes cathode end mounting position:any weight:0.0018 ounce, 0.064 grams ! ! ! ! ! ! ! ! ! maximum ratings and electrical characteristics t a = 25 c unless otherwise specified notes: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 2. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current @ t t = 75 c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage drop @ i f = 1.0a v fm 1.0 1.3 1.7 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 100 c i rm 5.0 100 a reverse recovery time (note 2) t rr 50 75 ns typical junction capacitance (note 1) c j 20 10 pf typical thermal resistance, junction to terminal r jt 30 c/w operating and storage temperature range t j, t stg -65 to +150 c characteristic symbol us1af us1bf us1df us1gf us1jf us1kf US1MF unit 1 of 2 www.sunmate.tw 0.65 0.67 0.63 1.40 1.42 1.38 1.00 1.03 0.097 2.60 2.63 2.57 3.70 3.72 3.68 4.75 4.85 4.80 smaf a e l b c e h d 0.15 0.17 0.13 e d a dim min max typ b c h l all dimensions in mm
50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , instantaneous reverse current ( a ) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 100 c j t = 25 c j 0.01 0.1 1.0 10 0 0.4 0.8 i , instantaneous for ward current (a ) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t - 25 c j pulse width = 300 s 1.2 1.6 2.0 us1af - us1df us1gf us1jf - US1MF 0 10 20 30 40 1 10 100 i , peak for ward surge current (a ) fsm number of cycles at 60hz fi g . 3 forward sur g e current deratin g curve single half sine-wave (jedec method) t = 150 c j 0 0.5 1.0 25 50 75 100 125 150 i , average rectified current (a) o t , terminal temperature ( c) fi g . 1 forward current deratin g curve t 2 of 2 www.sunmate.tw


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Price & Availability of US1MF
Newark

Part # Manufacturer Description Price BuyNow  Qty.
US1MFA
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NRVUS1MFA
91AH8426		 onsemi Rectifier, Single, 1Kv, 1A, Sod-123Fl; Repetitive Peak Reverse Voltage:1Kv; Average Forward Current:1A; Diode Configuration:Single; Forward Voltage Max:1.7V; Reverse Recovery Time:75Ns; Forward Surge Current:30A; No. Of Pins:2 Pin Rohs Compliant: Yes |Onsemi NRVUS1MFA 25000: USD0.101
10000: USD0.102
2500: USD0.111
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DigiKey

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1000: USD0.06969
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10: USD0.228
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US1MFA
US1MFACT-ND		 onsemi DIODE GEN PURP 1KV 1A SOD123FA 1000: USD0.15865
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Avnet Americas

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US1MFA
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US1MFA
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300000: USD0.12186
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US1MFA
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100: USD0.299
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NRVUS1MFA
NRVUS1MFA		 onsemi Fast / Ultrafast Diode, 1 kV, 1 A, Single, 1.7 V, 75 ns, 30 A, SOD-123FL, 2 Pins - Tape and Reel (Alt: NRVUS1MFA) 900000: USD0.09548
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Mouser Electronics

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US1MFL-TP
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Arrow Electronics

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US1MFA
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Verical

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TME

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Chip Stock

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