s mhop microelectronics c orp. a stb/p60l60a symbol v ds v gs i dm e as 1.2 62.5 w a p d c 125 -55 to 175 i d units parameter 60 65 190 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 156 mj product summary v dss i d r ds(on) (m ) @ vgs=10v features super high dense cell design for extremely low rds(on). high power and current handling capability. to-220 & to-263 package. stb series to-263(dd-pak) g g s s d d stp series to-220 s s d d g g s g d n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja ver 3.0 www.samhop.com.tw oct,13,2011 1 details are subject to change without notice. a 54 t c =70 c t c =70 c 87.5 w g r p p r p p
4 symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 2 v 15 g fs 48 s v sd c iss 2300 pf c oss 142 pf c rss 108 pf q g 63 nc 71 nc q gs 162 nc q gd 42 t d(on) 28 ns t r 5 ns t d(off) 11 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =30v i d =1a v gs =10v r gen =60 ohm total gate charge rise time turn-off delaytime v ds =30v,i d =25a,v gs =10v fall time turn-on delaytime m ohm v gs =10v , i d =32.5a v ds =20v , i d =32.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =48v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua reverse transfer capacitance on characteristics 4 19 b f=1.0mhz b v ds =30v,i d =25a, v gs =10v drain-source diode characteristics v gs =0v,i s =1a 0.75 1.3 v notes stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 2 2.8 a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _
stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 0.5 1.0 1.5 2.0 2.5 3.0 52 39 26 13 0 65 0 1.5 3.0 4.5 6.0 7.5 9.0 60 50 40 30 20 10 1 20 40 60 80 100 1 v gs =10v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v gs =10v i d =32.5a 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.4 1.3 1.2 1.1 1.0 0.9 0.8 i d =250ua 0 0 20 40 60 80 100 v gs = 10v v gs =8v v gs =7v v gs =6v v gs =5v tj=125 c -55 c 25 c
stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 90 75 60 45 30 0 0 15 10 1 60 0 0.3 0.6 0.9 1.2 1.5 10 15 20 25 30 3000 2500 2000 1500 1000 500 0 10 8 6 4 2 0 0 4812 16 20 24 28 32 2 46810 110 100 1 10 100 300 v ds =30v,i d =1a v gs =10v 0.1 1 10 60 100 10 1 0.3 v gs =10v single pulse t c =25 c r d s (o n) limit td(on) tr td(off ) tf 1ms 10m s dc 10 0 us ciss crss coss 05 v ds =30v i d =25a i d =32.5a 125 c 75 c 25 c 75 c 25 c 125 c
t p v (br )dss i as 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 5 unclamped inductive test circuit unclamped inductive waveforms figure 13a. figure 13b. square wave pulse duration (msec) figure 14. normalized thermal transient impedance curve r(t),normalized effective transient thermal impedance r g i as 0.01 t p d.u.t l v ds + - dd 20v v
stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 6
stb/p60l60a ver 3.0 www.samhop.com.tw oct,13,2011 7
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