comset semiconductors 1/4 mj2500 - mj2501 pnp MJ3000 - mj3001 npn silicon epitaxial-base darlington absolute maximum ratings symbol ratings value unit mj2500 MJ3000 60 v cbo collector-base voltage i e =0 mj2501 mj3001 80 vdc mj2500 MJ3000 60 v ceo collector-emittervoltage i b =0 mj2501 mj3001 80 vdc v ebo emitter-base voltage i c =0 mj2500 MJ3000 mj2501 mj3001 5.0 vdc i c collector current mj2500 MJ3000 mj2501 mj3001 10 adc the mj2500, and mj2501 are silicon epitaxial-base npn power transistors in monolithic darlington configuration and are mounted in jedec to-3 metal case. they are intented for use in power linear and switching applications. the complementary pnp types are the MJ3000 and mj3001 respectively.
comset semiconductors 2/4 mj2500 - mj2501 pnp MJ3000 - mj3001 npn symbol ratings value unit i b base current mj2500 MJ3000 mj2501 mj3001 0.2 adc p t power dissipation @ t c < 25 mj2500 MJ3000 mj2501 mj3001 150 watts t j t s junction storage temperature mj2500 MJ3000 mj2501 mj3001 200 -65 to +200 c thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case mj2500 MJ3000 mj2501 mj3001 1.17 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit mj2500 MJ3000 60 - - bv ceo collector-emitter breakdown voltage (*) i c =100 madc, i b =0 mj2501 mj3001 80 - - vdc
comset semiconductors 3/4 mj2500 - mj2501 pnp MJ3000 - mj3001 npn symbol ratings test condition(s) min typ mx unit v ce =30 vdc, i b =0 mj2500 MJ3000 -- i ceo collector cutoff current v ce =40 vdc, i b =0 mj2501 mj3001 -- 1.0 madc i ebo emitter cutoff current v be =5.0 vdc, i c =0 mj2500 mj2501 MJ3000 mj3001 --2.0madc v cb =60 v, r be =1.0 k ohm mj2500 MJ3000 -- v cb =80 v, r be =1.0 k ohm mj2501 mj3001 -- 1.0 v cb =60 v, r be =1.0 k ohm, t c =150c mj2500 MJ3000 -- i cer collector-emitter leakage current v cb =80 v, r be =1.0 k ohm, t c =150c mj2501 mj3001 -- 5.0 madc i c =5.0 a, i b =20 madc mj2500 MJ3000 mj2501 mj3001 --2.0 v ce(sat) collector-emitter saturation voltage (*) i c =10 a, i b =50 madc mj2500 MJ3000 mj2501 mj3001 --4.0 vdc v be base-emitter voltage (*) i c =5.0 adc, v ce =3.0vdc mj2500 MJ3000 mj2501 mj3001 --3v h fe dc current gain (*) v ce =3.0 vdc, i c =5.0 adc mj2500 MJ3000 mj2501 mj3001 1000 - - - - - for pnp types current and voltage values are negative (*) pulse width 300 s, duty cycle 2.0%
comset semiconductors 4/4 mj2500 - mj2501 pnp MJ3000 - mj3001 npn mechanical data case to-3 dimensions mm inches a 25,51 1,004 b 38,93 1,53 c 30,12 1,18 d 17,25 0,68 e 10,89 0,43 g 11,62 0,46 h 8,54 0,34 l 1,55 0,6 m 19,47 0,77 n 1 0,04 p 4,06 0,16 pin 1 : base pin 2 : collector case : emitter
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