advanced power dual n-channel enhancement electronics corp. mode power mosfet lower gate charge bv dss 100v simple drive requirement r ds(on) 150m fast switching characteristic i d 2.5a halogen free & rohs compliant product description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 100 + 20 parameter drain-source voltage gate-source voltage 1 parameter thermal data 201501122 2 -55 to 150 operating junction temperature range -55 to 150 total power dissipation 2 10 2.5 storage temperature range drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 pulsed drain current 1 ap5321gm-hf rating halogen-free product s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 ap5321 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2a - - 150 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =2a - 2.8 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =2a - 10 16 nc q gs gate-source charge v ds =80v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 4 - nc t d(on) turn-on delay time v ds =50v - 6.5 - ns t r rise time i d =2a - 7 - ns t d(off) turn-off delay time r g =3.3 - 14 - ns t f fall time v gs =10v - 3.5 - ns c iss input capacitance v gs =0v - 420 672 pf c oss output capacitance v ds =25v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =2a, v gs =0v - 40 - ns q rr reverse recovery charge di/dt=100a/s - 75 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. ap5321gm-hf
ap5321gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 0 1 2 3 4 5 6 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0 2 4 6 8 10 12 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 100 140 180 220 260 300 4 5 6 7 8 9 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 2 a t a =25 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = 2 a v g =10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
ap5321gm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 q v g 10v q gs q gd q g charge 0 2 4 6 8 10 0 2 4 6 8 10 12 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 80v i d = 2 a 0 100 200 300 400 500 600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 135 /w t t 0.02 operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90%
marking information 5 ap5321gm-hf 5321gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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