STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 description STP6635GH is the pchannel logic enhancement mode p ower field effect transistor which is produced using high cell density, dmos tre nch technology. the stp413d has been designed specially to improve the overall effi ciency of dc/dc converters using either synchronous or conventional switching pwm co ntrollers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. pin configuration (d-pak) to-252 to-251 part marking y: year code a: process code feature 30v/26.0a, r ds(on) = 20m @v gs = 10v 30v/16.0a, r ds(on) = 36m @v gs =4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability to252 package design
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drainsource voltage vdss 30 v gatesource voltage vgss 20 v continuous drain current (tj=150 ) ta=25 ta=70 id 40.0 25.0 a pulsed drain current idm 150 a continuous source current (diode conduction) is 32 a power dissipation ta=25 pd 44 w operation junction temperature tj 150 storgae temperature range tstg 55/150 thermal resistancejunction to ambient rja 60 /w
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max uni t static drainsource breakdown voltage v (br)dss v gs =0v,id=250ua 30 v gate threshold voltage v gs(th) v ds =v gs ,id=250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =30v,v gs =0v 1 zero gate voltage drain current i dss v ds =30v,v gs =0v t j =55 5 ua onstate drain current i d(on) v ds R 10v,v ds =5v 40 a drainsource on resistance r ds(on) v gs =10v,i d =26a v gs =4.5v,i d =16a 20 36 m forward transconductance gfs v ds =5v,i d =26a 31 s diode forward voltage v sd i s =26.0a,v gs =0v 1.3 v dynamic total gate charge q g 16.5 gatesource charge q gs 3.8 gatedrain charge q gd v gs =4.5v,v ds =25v i d =26a 12 nc input capacitance c iss 1600 output capacitance c oss 169 reverse transfercapacitance c rss v ds =25v,v gs =0v f=1mhz 175 pf 7.9 turnon time t d(on) tr 65 24.8 turnoff time t d(off) tf v gs =10v,v ds =15v r l =1.6,r gen =3.3 r d =0.58, i d =26a 91.2 ns
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 typical characterictics
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 typical characterictics
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 gate charge test circuit & waveform tesistive switching test circuit & w aveforms
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 unclamped inductive switching (uis) test circuit & waveforms diode recovery test circuit & waveforms
STP6635GH p channel enhancement mode mosfet 40.0a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2009, stanson corp. STP6635GH 2009. v1 to-252-2l package outline sop-8p
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