vishay siliconix si1972dh document number: 74398 s10-0721-rev. b, 29-mar-10 www.vishay.com 1 dual n-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? compliant to rohs directive 2002/95/ec applications ? load switch for portable applications product summary v ds (v) r ds(on) ( )i d (a) a q g (typ.) 30 0.190 at v gs = 10 v 1.3 0.91 nc 0.344 at v gs = 4.5 v 1.3 n-ch a nnel mo s fet g 2 d 2 s 2 n-ch a nnel mo s fet g 1 d 1 s 1 marking code ce xx lot tracea b ility and date code part # code y y sot-363 sc-70 (6-leads) 6 4 1 2 3 5 to p v ie w s 1 g 1 d 2 d 1 g 2 s 2 orderin g information: si1972dh-t1-e3 (lead (p b )-free) si1972dh-t1-ge3 (lead (p b )-free and halogen-free) notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 220 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 1.3 a a t c = 70 c 1.3 a t a = 25 c 1.3 a t a = 70 c 1.2 pulsed drain current i dm 4 continuous source-drain diode current t c = 25 c i s 1.0 t a = 25 c 0.61 c maximum power dissipation t c = 25 c p d 1.25 w t c = 70 c 0.8 t a = 25 c 0.74 b, c t a = 70 c 0.47 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 130 170 c/w maximum junction-to-foot (drain) steady state r thjf 80 100
www.vishay.com 2 document number: 74398 s10-0721-rev. b, 29-mar-10 vishay siliconix si1972dh notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v v ds temperature coefficient v ds /t j i d = 250 a 23.5 mv/c v gs(th) temperature coefficient v gs(th) /t j - 4.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2.8 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 ns zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a v ds = 30 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 4 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 1.3 a 0.155 0.225 v gs = 4.5 v, i d = 0.29 a 0.278 0.340 forward transconductance a g fs v ds = 15 v, i d = 1.3 a 1.4 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 75 pf output capacitance c oss 18 reverse transfer capacitance c rss 6 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 1.3 a 1.85 2.8 nc v ds = 15 v, v gs = 4.5 v, i d = 1.3 a 0.91 1.4 gate-source charge q gs 0.51 gate-drain charge q gd 0.3 gate resistance r g f = 1 mhz 4.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 12.5 i d ? 1.2 a, v gen = 4.5 v, r g = 1 15 25 ns rise time t r 50 75 turn-off delay time t d(off) 715 fall time t f 15 25 turn-on delay time t d(on) v dd = 15 v, r l = 12.5 i d ? 1.2 a, v gen = 10 v, r g = 1 510 rise time t r 10 15 turn-off delay time t d(off) 10 15 fall time t r 612 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1 a pulse diode forward current i sm 4 body diode voltage v sd i s = 1.2 a, v gs = 0 v 0.85 1.2 v body diode reverse recovery time t rr i f = 1.2 a, di/dt = 100 a/s, t j = 25 c 20 40 ns body diode reverse recovery charge q rr 18 36 nc reverse recovery fall time t a 16 ns reverse recovery rise time t b 4
document number: 74398 s10-0721-rev. b, 29-mar-10 www.vishay.com 3 vishay siliconix si1972dh typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 1 2 3 4 0.0 0.4 0. 8 1.2 1.6 2.0 v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d v gs = 10 v thr u 5 v 3 v 4 v ( ) e c n a t s i s e r - n o - r ds(on) 0.0 0.1 0.2 0.3 0.4 0.5 0 . 6 01234 i d - drain c u rrent (a) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v gs v ds = 15 v v ds = 24 v i d = 1.3 a transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.2 0.4 0.6 0. 8 1.0 01234 v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d t c = - 55 c t c = 125 c t c = 25 c 0 20 40 60 8 0 100 0 5 10 15 20 25 30 v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c c rss c oss c iss 0.6 0. 8 1.0 1.2 1.4 1.6 1 . 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v and 4.5 v , i d = 1.3 a t j - j u nction temperat u re (c) ) d e z i l a m r o n ( e c n a t s i s e r - n o - r ds(on)
www.vishay.com 4 document number: 74398 s10-0721-rev. b, 29-mar-10 vishay siliconix si1972dh typical characteristics 25 c, unless otherwise noted forward diode voltage threshold voltage t j = 150 c v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s 10 0.1 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 25 c 1 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 - 50 - 25 0 25 50 75 100 125 150 t j - temperat u re (c) i d = 250 a ) v ( v gs(th) on-resistance vs. gate-source voltage single pulse power 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0246 8 10 ( ) e c n a t s i s e r - n o - r ds(on) v gs - gate-to-so u rce v oltage ( v ) 25 c 125 c i d = 1.3 a 0 1 5 ) w ( r e w o p time (s) 3 4 1 600 10 0.1 0.01 2 100 safe operating area, junction-to-ambient v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified ) a ( t n e r r u c n i a r d - i d 10 0.1 0.1 1 10 100 1 t a = 25 c single p u lse 10 ms 100 ms dc 1 ms 100 s 0.01 b v dss limited 1 s, 10 s limited b y r ds(on) *
document number: 74398 s10-0721-rev. b, 29-mar-10 www.vishay.com 5 vishay siliconix si1972dh typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0.0 0.4 0. 8 1.2 1.6 2.0 2 . 4 0 25 50 75 100 125 150 i d ) a ( t n e r r u c n i a r d - t c - case temperat u re (c) package limited power derating c - case temperat u re (c) t 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 . 4 25 50 75 100 125 150 ) w ( n o i t a p i s s i d r e w o p
www.vishay.com 6 document number: 74398 s10-0721-rev. b, 29-mar-10 vishay siliconix si1972dh typical characteristics 25 c, unless otherwiese noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74398 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 170 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm 0.02 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.02
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