FJP5200 ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 1 january 2009 FJP5200 npn epitaxial silicon transistor applications ? high-fidelity audio output amplifier ? general purpose power amplifier features ? high current capability: i c = 17a. ? high power dissipation : 80watts. ? high frequency : 30mhz. ? high voltage : v ceo =250v ? wide s.o.a for reliable operation. ? excellent gain linearity for low thd. ? complement to fjp1943 ? thermal and electrical sp ice models are available. ? same transistor is also available in: -- to264 package, 2sc5200/fjl4315 : 150 watts -- to3p package, 2sc5242/fja4313 : 130 watts -- to220f package, fjpf5200 : 50 watts absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics* t a =25 c unless otherwise noted * device mounted on minimum pad size h fe classification symbol parameter ratings units bv cbo collector-base voltage 250 v bv ceo collector-emitter voltage 250 v bv ebo emitter-base voltage 5 v i c collector current(dc) 17 a i b base current 1.5 a p d total device dissipation(t c =25 c ) derate above 25 c 80 0.64 w w/ c t j , t stg junction and storage temperature - 50 ~ +150 c symbol parameter max. units r jc thermal resistance, junction to case 1.25 c/w classification r o h fe1 55 ~ 110 80 ~ 160 to-220 1 1.base 2.collector 3.emitter
FJP5200 ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 2 electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse widt=20 s, duty cycle 2% ordering information symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =5ma, i e =0 250 v bv ceo collector-emitter breakdown voltage i c =10ma, r be = 250 v bv ebo emitter-base breakdown voltage i e =5ma, i c =0 5 v i cbo collector cut-off current v cb =230v, i e =0 5.0 a i ebo emitter cut-off current v eb =5v, i c =0 5.0 a h fe1 dc current gain v ce =5v, i c =1a 55 160 h fe2 dc current gain v ce =5v, i c =7a 35 60 v ce (sat) collector-emitter saturation voltage i c =8a, i b =0.8a 0.4 3.0 v v be (on) base-emitter on voltage v ce =5v, i c =7a 1.0 1.5 v f t current gain bandwidth product v ce =5v, i c =1a 30 mhz c ob output capacitance v cb =10v, f=1mhz 200 pf part number marking package packing method remarks FJP5200rtu j5200r to-220 tube hfe1 r grade FJP5200otu j5200o to-220 tube hfe1 o grade
FJP5200 ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 3 typical characteristics figure 1. static characteristic figure 2. dc current gain ( r grade ) figure 3. dc current gain ( o grade ) figure 4. collector-emitter saturation voltage figure 5. base-emitter saturation voltage figure 6. base-emitter on voltage 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 i b = 0 i b =200ma i b = 120ma i b = 140ma i b = 160ma i b = 180ma i b = 100ma i b = 60ma i b = 80ma i b = 40ma i c [a], collector current v ce [v], collector-emitter voltage 110 1 10 100 vce=5v tj=-25 o c tj=25 o c tj=125 o c h fe , dc current gain ic[a], collector current 110 1 10 100 vce=5v tj=-25 o c tj=25 o c tj=125 o c h fe , dc current gain ic[a], collector current 0.1 1 10 1 10 100 1000 10000 ic=10ib tj=-25 o c tj=25 o c tj=125 o c vce(sat)[mv], saturation voltage ic[a], collector current 0.1 1 10 100 1000 10000 ic=10ib tj=-25 o c tj=25 o c tj=125 o c vbe(sat)[mv], saturation voltage ic[a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 v ce = 5v i c [a], collector current v be [v], base-emitter voltage
FJP5200 ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 4 typical characteristics figure 7. thermal resistance figure 8. power derating 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 transient thermal resistance, r thjc [ o c / w] pulse duration [sec] 0 25 50 75 100 125 150 175 0 20 40 60 80 100 p c [w], power dissipation t c [ o c], case temperature
FJP5200 ? npn epitaxial silicon transistor ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 5 mechanical dimensions to220
FJP5200 npn epitaxial silicon transistor FJP5200 ? 2009 fairchild semiconductor corporation www.fairchildsemi.com FJP5200 rev. c 6
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