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s mhop microelectronics c orp. a STU612D symbolv ds v gs i dm e as w a p d c 10.5 -55 to 150 i d units parameter 60 8.6 25 vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 60v 8.6a 90 @ vgs=4.5v 76 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw mar,05,2009 1 details are subject to change without notice. 60 c/w thermal resistance, junction-to-ambient r ja a t c =25 c t o-252-4l d1/d2 s 1 g 1 s 2 g 2 n-ch p -ch g 1 d 1 s 1 g 2 d 2 s 2 product summary (p-channel) v dss i d r ds(on) (m ) max -60v -7.3a 145 @ vgs=-4.5v 110 @ vgs=-10v -60 -7.3 -21 20 p-channel t c =70 c a 6.9 -5.8 6.7 w t c =70 c 12 c/w thermal resistance, junction-to-case r jc a ver 1.0 green product 20 30
4 symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) 1.0 v 60 g fs 21 s v sd c iss 850 pf c oss 48 pf c rss 40 pf q g 11.5 nc 11.7 nc q gs 37 nc q gd 7 t d(on) 17 ns t r 1.7 ns t d(off) 4.7 ns t f ns gate-drain charge v ds =30v,v gs =0v switching characteristics gate-source charge v dd =30v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =30v,i d =8.6a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =8.6a v ds =5v , i d =8.6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =8a 76 70 90 m ohm c f=1.0mhz c v ds =30v,i d =8.6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.81 1.2 v STU612D www.samhop.com.tw mar,05,2009 2 nc v ds =30v,i d =8.6a,v gs =4.5v 8.3 1.6 b i s maximum continuous drain-source diode forward current a 2.0 ver 1.0
4 symbol min typ max units bv dss -60 v -1 i gss 100 na v gs(th) -1.0 v 88 g fs 12 s v sd c iss 740 pf c oss 64 pf c rss 38 pf q g 12.5 nc 12 nc q gs 65 nc q gd 12 t d(on) 13.5 ns t r 1.6 ns t d(off) 3.6 ns t f ns gate-drain charge v ds =-30v,v gs =0v switching characteristics gate-source charge v dd =-30v i d =-1a v gs =-10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =-30v,i d =-7.3a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-7.3a v ds =-10v , i d =-7.3a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-48v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-6.3a 110 110 145 m ohm c f=1.0mhz c v ds =-30v,i d =-7.3a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.6a -0.8 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v,v gs =10v.(see figure13) _ _ STU612D www.samhop.com.tw mar,05,2009 3 nc v ds =-30v,i d =-7.3a,v gs =-4.5v 6 _ -1.7 b i s maximum continuous drain-source diode forward current a -1.6 ver 1.0
STU612D www.samhop.com.tw mar,05,2009 4 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel 20 16 12 8 40 0 0.5 1 1.5 2 2.5 3 v g s =3v v g s =4v v g s =3.5v 10 6 4 2 0 0 0.8 1.6 2.4 3.2 4.0 4.8 8 t j =1 25 c -55 c c 25 100 80 60 40 20 0 4 8 12 16 20 1 v g s =10v v g s =4.5v 120 t j ( c ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.0 v g s =4.5v i d =8a v g s =5v v g s = 1 0 v v g s =10v i d =8.6a
STU612D www.samhop.com.tw mar,05,2009 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 120 90 0 2 4 6 8 10 0 i d =8.6a 60 30 180 150 125 c 25 c 75 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 1200 1000 800 600 400 200 0 c is s c os s c rs s 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds =30v i d =8.6a 10 1 0.1 0.1 100 1 10 100 r ds (o n) l im i t v g s =10v s ingle p uls e t c=25 c 1m s 100u s 1 0 ms d c ver 1.0 0 5 10 15 20 25 30 125 c 25 c 75 c 1 10 100 60 100 10 1 300 6 v ds =30v ,id=1a v g s =10v tr td(off) tf 1 0 m s td(on)
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STU612D www.samhop.com.tw mar,05,2009 6 0.00001 0.0001 0.001 0.01 0.1 10 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0.1 1 2 1 d=0.5 0.2 0.1 0.05 0.02 0.01 s ing le p uls e p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 ver 1.0
STU612D www.samhop.com.tw mar,05,2009 7 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel t j ( c ) 15 12 9 6 3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v g s =-3v v g s =-3.5v v g s =-10v v g s =-4v v g s =-4.5v 10 8 6 4 2 0 0 0.9 5.4 4.5 3.6 2.7 1.8 -55 c t j=125 c 25 c 240 200 160 120 80 40 1 1 3 6 9 12 15 v g s =-10v v g s =-4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v g s =-10v i d =-7.3a v g s =-4.5v i d =-6.3a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =-250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =-250ua ver 1.0
STU612D www.samhop.com.tw mar,05,2009 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area ciss coss crss 1200 1000 800 600 400 200 0 10 15 20 25 30 0 5 0.1 1 10 60 10 1 0.1 0.03 80 v gs =-10v single pulse t a =25 c 1m s d c r ds ( o n) l i m it 1 0 0 us 10 ms 25 c 125 c 75 c 240 200 160 120 80 40 0 2 4 6 8 10 0 i d =-7.3a 20.010.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 75 c 125 c 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =-30v i d =-7.3a 1 10 100 1 10 100 300 td(on) tr td(off ) tf vds=-30v,id=-1a vgs=-10v ver 1.0
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STU612D www.samhop.com.tw mar,05,2009 9 0.00001 0.0001 0.001 0.01 0.1 10 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0.1 1 2 1 d=0.5 0.2 0.1 0.05 0.02 0.01 s ing le p uls e p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 ver 1.0
STU612D www.samhop.com.tw 10 package outline dimensions to-252-4l 1 2 3 e1 d e b2 d1 l3 l4 b1 b e 4 5 h c a detail "a" 1 l l1 a1 l2 detail "a" 0.127 0.440 0.680 0.787 6.000 9.400 0.508 ref. 0.890 1.270 l4 0.640 1.270 bsc b1b2 6.400 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 5.200 a 2.200 2.387 max min 0.000 0.635 5.210 5.460 c 0.450 0.584 d 6.223 d1 e e 10.400 l h 1.010 1 0 7 10 ref. max min millimeters inches 0.087 0.094 0.000 0.005 0.017 0.027 0.025 0.031 0.205 0.215 0.018 0.023 0.236 0.245 0.205 0.217 0.252 0.265 0.050 bsc 0.370 0.409 0.055 0.070 0.108 0.020 0.035 0.050 0.025 0.040 0 7 10 ref. symbols e1 4.400 5.004 0.173 0.197 ref. ref. mar,05,2009 ver 1.0
STU612D www.samhop.com.tw mar,05,2009 11 to-252-4l carrier tape to-252-4l tape and reel data to-252-4l reel feed direction e e2 e1 d0 p0 p2 p1 d1 b b a a a0 max 6 b0 max 4 k0 t section a - a section b - b unit: @ package to-252 (16 @* a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 2 0.1 2 0.1 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 t n m w g v r s k h ver 1.0

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