ls , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor MJE18004 description ? collector-base breakdown voltage- : v(br)cbo= 1000v(min) ? high switching speed applications ? designed for use in 220v line-operated switchmode power supplies and electronic light ballasts absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic icm ib ibm pd tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current base current-peak total power dissipation@tc=25'c junction temperature storage temperature value 1000 450 9 5 10 2 4 100 150 -65-150 unit v v v a a a a w c 'c thermal characteristics symbol p>thj-c rth j-a parameter thermal rresistance, junction to case thermal resistance, junction to ambient max 1.25 62.5 unit r/w 'c/w 1 2 3 pin 1.base 2.collector 3 bulltter to-220c package i silicon npn power transistor MJE18004 electrical characteristics tj=25 c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vce(sat)-3 vee(sat)-1 vee(sat)-2 vbe(sat)-3 ices i ceo iebo hpe-1 hpe-2 hfe-3 hpe-4 fl cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain dc current gain dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc= 0.1a; l= 25mh lc=1 a;ib=0.1a tc=125c ic=2a;ib=0.4a tc=125'c ic=2.5a;ib=0.5a ic=1a; ib=0.1a lc= 2a; ib= 0.4a ic=2.5a; ib=0.5a vces= ratedvces;veb= 0 tc=125'c vces= 800v tc=125'c vce= ratedvceo; !b= 0 veb= 9v; lc= 0 ic=1a;vce=2.5v lc=1a;vce=5v lc=2a;vce=1v lc=10ma;vce=5v lc= 0.5a;vce= 10v;ftest=1.0mhz ie= 0; vce= 10v; ftes,=1.0mhz min 450 12 14 6 10 typ 13 45 max 0.5 0.6 0.45 0.8 0.75 1.1 1.25 1.3 0.05 0.5 0.01 0.1 0.1 0.1 36 unit v v v v v v v ma ma ma mhz pf switching times resistive load,duty cycled 10%,pulse width=20 u s ton ts tf turn-on time storage time turn-off time vcc=250v ,ic=2.5a ib1=ib2=0.5a 450 2 0.275 600 3 0.4 ns u s |i s
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