dst847bpdp6 document number: ds32036 rev. 2 - 2 1 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 45v complementary small signal transistor in sot963 features ? npn & pnp complementary ss ? bv ceo > 45 v ? i c = 100ma high collector current ? p d = 300mw power dissipation ? 1 mm 2 p ackage f ootprint, 5 times smaller than sot23 ? 0.5 mm h eight p ackage m inimizing o ff - b oard p rofile ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot - 963 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sens itivity: level 1 per j - std - 020 ? terminals: finish ? matte tin a nnealed over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.002 7 grams ( a pproximate) ordering information (note 4 ) device compliance marking reel size (inches) tape width (mm) quantity per reel dst847bpdp 6 - 7 aec - q101 tc 7 8 10,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information device schematic top view sot - 963 tc = product type marking code sot - 963 6 q1 q2 5 4 3 1 2 tc
dst847bpdp6 document number: ds32036 rev. 2 - 2 2 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 absolute maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit collector - base voltage v cbo 50( - 50 ) v collector - emitter voltage v ceo 45( - 45 ) v emitter - base voltage v ebo 6.0( - 5 .0 ) v collector current i c 100 ( - 100 ) ma thermal characteristics characteristic symbol value unit power dissipation (note 5 ) p d 300 mw thermal resistance, junction to ambient (note 5 ) r ? ja 417 c/w operating and storage temperature range t j , t stg - 55 to +150 c esd ratings (note 6 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3 a electrostatic discharge - machine model esd mm 200 v b notes: 5 . for the device mounted on minimum recommended pad layout 1oz copper that is on a single - sided 1.6mm fr4 pcb; device is measured under still air conditions whilst operating in steady state condition. 6 . refer to jedec specification jesd22 - a114 and jesd 22 - a115.
dst847bpdp6 document number: ds32036 rev. 2 - 2 3 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 thermal characteristics and derating information 0.000001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 1 transient thermal response t , pulse duration time (s) 1 0.00001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 370c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1 0.00001 0.001 0.1 10 1,000 fig. 2 single pulse maximum power dissipation t , pulse duration time (s) 1 0.01 1 10 100 1,000 p ( p k ) , p e a k t r a n s i e n t p o w e r ( w ) 0.1 single pulse t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 370c/w ? ? ja ja 0 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 t , ambient temperature ( c) a ? fig. 3 power dissipation vs. ambient temperature p , p o w e r d i s s i p a t i o n ( w ) d note 3
dst847bpdp6 document number: ds32036 rev. 2 - 2 4 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 e lectrical characteristics C q1 npn transistor ( @t a = + 25c , unless otherwise specified .) characteristic (note 7 ) symbol min typical max unit test condition collector - base breakdown voltage b v cbo 50 150 - v i c = 10 a, i b = 0 collector - emitter breakdown voltage b v ces 50 150 - v i c = 10 a, i b = 0 collector - emitter breakdown voltage b v ceo 45 65 - v i c = 1ma, i b = 0 emitter - base breakdown voltage b v e bo 6 8.35 - v i e = 1 a, i c = 0 collector - base cut - o ff current i cbo - - 15 na v cb = 30v dc current gain h fe - 200 220 300 - 47 0 - i c = 10 a, v ce = 5v i c = 2.0ma, v ce = 5v collector - emitter saturation voltage v ce(sat) - - 50 122 125 300 mv i c = 10ma, i b = 0.5 ma i c = 100 ma, i b = 5.0ma base - emitter saturation voltage v be(sat) - - 760 880 1 , 000 1 , 100 mv i c = 10ma, i b = 0.5 ma i c = 10 0ma, i b = 5.0ma base - emitter voltage v be(on) 580 650 725 750 800 mv i c = 2.0ma, v ce = 5v i c = 10ma, v ce = 5v current gain - bandwidth product f t 100 ? ce = 5 v, i c = 10ma, f = 100mhz collector - base capacitance c cbo - 1.5 - pf v cb = 10v, f = 1.0mhz note : 7 . measured under pulsed conditions. pulse width ? 300 s. duty cycle ? 2%.
dst847bpdp6 document number: ds32036 rev. 2 - 2 5 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 typical characteristics C q1 npn transistor ( @t a = +25c, unless otherwise specified.) 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0 1 2 3 4 5 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i , c o l l e c t o r c u r r e n t ( a ) c i = 2ma b i = 0.2ma b i = 0.4ma b i = 0.6ma b i = 0.8ma b i = 1.6ma b i = 1.4ma b i = 1.2ma b i = 1.8ma b i = 1ma b 0 50 100 150 200 250 300 350 400 450 1 10 100 i , collector current (ma) c fig. 5 typical dc current gain vs. collector current h , d c c u r r e n t g a i n f e t = -55c a t = 25c a t = 100c a t = 150c a v = 5v ce 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 1 10 100 i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) t = -55c a i /i = 10 cb t = 25c a t = 100c a t = 150c a 1 10 100 i , collector current (ma) c fig. 7 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) 1 i /i = 20 cb t = 100c a t = 50c a t = 20c a t = 10c a 0.1 1 10 100 i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current 0.2 0.4 0.6 0.8 v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) 1.0 v = 5v ce t = 150c a t = 100c a t = 25c a t = -55c a 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 10 100 i , collector current (ma) c fig. 9 typical base-emitter saturation voltage vs. collector current v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) t = 150c a t = 100c a t = 25c a t = -55c a
dst847bpdp6 document number: ds32036 rev. 2 - 2 6 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 electrical characteristics C q2 pnp transistor ( @t a = +25c, unless otherwise specified.) characteristic (note 7 ) symbol min typical max unit test condition collector - base breakdown voltage b v cbo - 50 - 100 - v i c = - 10 a, i b = 0 collector - emitter breakdown voltage b v ces - 50 - 90 - v i c = - 10 a, i b = 0 collector - emitter breakdown voltage b v ceo - 45 - 65 - v i c = - 1ma, i b = 0 emitter - base breakdown voltage b v ebo - 6 - 8.5 - v i e = - 1 a, i c = 0 collector cut - o ff current i cbo - - - 15 na v cb = - 30v dc current gain h fe - 2 0 0 340 330 - 470 - i c = - 10 a, v ce = - 5v i c = - 2.0ma, v ce = - 5v collector - emitter saturation voltage v ce(sat) - - - 70 - 300 - 175 - 500 mv i c = - 10ma, i b = - 0.5 ma i c = - 100 ma, i b = - 5.0ma base - emitter saturation voltage v be(sat) - - - 760 - 885 - 1 , 000 - 1 , 100 mv i c = - 10ma, i b = - 0.5 ma i c = - 10 0ma, i b = - 5.0ma base - emitter voltage v be(on) - 600 - - 670 - 715 - 780 - 850 mv i c = - 2.0ma, v ce = - 5v i c = - 10ma, v ce = - 5v current gain - bandwidth product f t 100 ? ce = - 5 v, i c = - 10ma, f = 100mhz output capacitance c obo - 2.0 - pf v cb = - 10v, f = 1.0mhz note : 7 . measured under pulsed conditions. pulse width ? 300 s. duty cycle ? 2%.
dst847bpdp6 document number: ds32036 rev. 2 - 2 7 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 typical characteristics C q2 pnp transistor ( @t a = +25c, unless otherwise specified.) 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0 1 2 3 4 5 -v , collector-emitter voltage (v) ce fig. 10 typical collector current vs. collector-emitter voltage - i , c o l l e c t o r c u r r e n t ( a ) c i = -2ma b i = -0.2ma b i = -0.4ma b i = -0.6ma b i = -0.8ma b i = -1ma b i = -1.6ma b i = -1.4ma b i = -1.2ma b i = -1.8ma b 10 100 1,000 0.1 1 10 100 1,000 -i , collector current (a) c fig. 11 typical dc current gain vs. collector current h , d c c u r r e n t g a i n f e t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ce 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 12 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) t = -55c a i /i = 10 cb t = 25c a t = 85c a t = 125c a t = 150c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 13 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) t = -55c a i /i = 20 cb t = 25c a t = 85c a t = 125c a t = 150c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 14 typical base-emitter turn-on voltage vs. collector current 0 0.2 0.4 0.6 0.8 1.2 - v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) 1.0 v = -5v ce t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 15 typical base-emitter saturation voltage vs. collector current 0.2 0.4 0.6 0.8 1.0 1.2 - v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) i = 10 cb /i t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a
dst847bpdp6 document number: ds32036 rev. 2 - 2 8 of 9 www.diodes.com march 2015 ? diodes incorporated dst847bpdp6 package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggest pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. sot - 963 dim min max typ a 0.40 0.50 0.45 a1 0 0.05 - c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 l 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 typ e1 0.70 typ all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 l c e d e1 e e1 b (6 places) a a1 y1 y (6x) c c x (6x)
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