Part Number Hot Search : 
M35V1 87C51 2SD1454 SCB35M SOP18 2SK118 33000 DRS203K
Product Description
Full Text Search
 

To Download PJP13NA50 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 1 5 00 v n - c hannel mosfet v oltage 5 0 0 v c urrent 13 a ito - 220ab - f to - 220ab f eatures ? r ds(on) , v gs @10v,i d @ 6.5 a< 0.52 ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse tra nsfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive. ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case : to - 220ab, ito - 220ab - f package ? terminals : solderable per mil - std - 750, method 2026 ? to - 220ab ap prox. weight : 0.06 7 ounces, 1. 9 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted) parameter symbol to - 220ab ito - 220ab - f units drain - source voltage v ds 500 v g ate - source voltage v gs + 30 v continuous drain current i d 13 a pulsed drain current i dm 5 2 a single pulse avalanche energy (note 1 ) e as 824 mj power dissipation t c =25 o c p d 190 51 w derate above 25 o c 1.52 0.41 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - junction to case - j unction to ambient r jc ja 0.66 62.5 2.45 120 o c /w ? limited only by maximum junction temperature
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 5 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 3.1 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 6.5 a - 0. 4 4 0. 52 dss v ds = 5 00v,v gs =0v - 0.02 1 ua gate - source leakage current i gss v g s = + 30v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 13 a,v gs =0v - 0. 9 1.4 v dynamic (note 4 ) total gate charge q g v ds = 400 v, i d = 13 a, v gs =10v (note 2,3 ) - 2 8 - nc gate - source charge q gs - 8.2 - gate - drain charge q gd - 9.6 - input capacitance cis s v ds =25v, v gs =0v, f=1.0mhz - 1435 - pf output capacitance coss - 1 80 - reverse transfer capacitance crss - 5 - turn - on delay time td (on) v dd = 250 v, i d = 13 a, r g = 25 (note 2,3 ) - 14 - ns turn - on rise time t r - 30 - turn - off delay time td (off) - 36 - turn - off fall time t f - 29 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 13 a maximum pulsed drain - source diode for ward current i sm --- - - 52 a reverse recovery time trr v gs =0v, i s = 13 a di f / dt=100a/us (note 2 ) - 537 - ns reverse recovery charge qrr - 5.3 - uc notes : 1. l=30mh, i as = 7.15 a, v dd = 5 0 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essential ly independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistsnce vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 body dlode characterlslcs
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage v ariation vs.temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 PJP13NA50 normalized transient thermal impedan ce vs. pulse width fig. 14 pj f13 na 5 0 normalized transient thermal impedance vs. pulse width
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm t o - 220ab dimension u nit: mm
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 7 p art n o packing code v ersion part n o packing code package type packing type marking ver sion pj p13na50 _t0_00001 to - 220 ab 50pcs / tube p13na50 halogen free pj f13na50 _t0_00001 ito - 220ab - f 50pcs / tube f13na50 halogen free
p p jp 13 na50 / pjf 13 na50 march 10,2014 - rev.00 page 8 disclaimer


▲Up To Search▲   

 
Price & Availability of PJP13NA50
NAC

Part # Manufacturer Description Price BuyNow  Qty.
PJP13NA50_T0
PanJit Semiconductor SILICON ZENER DIODE - 13IN. REEL. Package Type: SOD-123FL RFQ
0

Ozdisan Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
PJP13NA50_T0_00001
PanJit Group MOSFET DIS.13A 500V N-CH TO220AB THT 50: USD0.9596
1: USD1.10354
RFQ
0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X