vishay IL66/ ild66/ ilq66 document number 83638 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 1 1 2 3 6 5 4 a c nc single channel 1 2 3 4 8 7 6 5 a c c a e c c e dual channel 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 a c c a a c c a e c c e e c c e quad channel i179014 b c e optocoupler, photodarlington output, with internal rbe (single, dual, quad channel) features ? internal rbe for high stability four available ctr categories per package type bv ceo > 60 v standard dip packages agency approvals ul - file no. e52744 system code h or j din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 description IL66, ild66, and ilq66 are optically coupled isolators employing gallium arsenide infrared emitters and sil- icon photodarlington detectors. switching can be accomplished while maintaining a high degree of iso- lation between driving and load circuits, with no crosstalk between channels. order information for additional information on the available options refer to option information. part remarks IL66-1 ctr 100 %, dip-6 IL66-2 ctr 300 %, dip-6 IL66-3 ctr 400 %, dip-6 IL66-4 ctr 500 %, dip-6 ild66-1 ctr 100 %, dip-8 ild66-2 ctr 300 %, dip-8 ild66-3 ctr 400 %, dip-8 ild66-4 ctr 500 %, dip-8 ilq66-1 ctr 100 %, dip-16 ilq66-2 ctr 300 %, dip-16 ilq66-3 ctr 400 %, dip-16 ilq66-4 ctr 500 %, dip-16 IL66-4-x009 ctr 500 %, smd-8 (option 9) ild66-2-x007 ctr 300 %, smd-8 (option 7) ild66-3-x009 ctr 400 %, smd-8 (option 9) ild66-4-x009 ctr 500 %, smd-8 (option 9) ilq66-4-x007 ctr 500 %, smd-16 (option 7) ilq66-4-x009 ctr 500 %, smd-16 (option 9) part remarks
www.vishay.com 2 document number 83638 rev. 1.4, 20-apr-04 vishay IL66/ ild66/ ilq66 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. functional operation of the device is not implied at these or any other conditions in excess of thos e given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input each channel output coupler parameter test condition symbol value unit peak reverse voltage v rm 6.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c parameter test condition symbol value unit power dissipation p diss 150 mw derate linearly from 25c 2.0 mw/c parameter test condition part symbol value unit isolation test voltage t = 1.0 sec. v iso 5300 v rms total package power dissipation IL66 p tot 250 mw ild66 p tot 400 mw ilq66 p tot 500 mw derate linearly from 25 c IL66 3.3 mw/c ild66 5.33 mw/c ilq66 6.67 mw/c creepage 7.0 min clearance 7.0 min comparative tracking index 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 125 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec.
vishay IL66/ ild66/ ilq66 document number 83638 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical va lues are characteristics of t he device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input gaas emitter output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma v f 1.25 1.5 v reverse current v r = 6.0 v i r 0.1 10 a capacitance v r = 0 v c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma, i f = 0 bv ceo 60 v collector-base breakdown voltage (IL66) i c = 10 abv cbo 60 v collector-emitter leakage current v ce = 50 v, i f = 0 i ceo 1.0 100 na capacitance, collector-emitter v ce = 10 v 3.4 pf parameter test condition symbol min ty p. max unit saturation voltage, collector- emitter i c = 10 ma, i f = 10 ma v cesat 0.9 1.0 v parameter test condition part symbol min ty p. max unit current transfer ratio i f = 2.0 ma, v ce = 10 v il(d,q)66-1 ctr 100 400 % il(d,q)66-2 ctr 300 500 % i f = 0.7 ma, v ce = 10 v il(d,q)66-3 ctr 400 500 % i f = 2.0 ma, v ce = 5.0 v il(d,q)66-4 ctr 500 750 %
www.vishay.com 4 document number 83638 rev. 1.4, 20-apr-04 vishay IL66/ ild66/ ilq66 vishay semiconductors switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit rise time -1, -2, -4 v cc = 10 v t r 200 s fall time -1, -2, -4 i f = 2.0 ma, r l = 100 ? t f 200 s rise time -3 i f = 0.7 ma t r 200 s fall time -3 v cc = 10 v, r l = 100 ? t f 200 s fig. 1 forward voltage vs. forward current fig. 2 normalized non-saturated and saturated ctr ce vs. led current iIL66_01 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i f - forward current - ma v f - forward voltage - v t a = -55c t a =100c t a = 25c iIL66_02 100 10 1 .1 2.0 1.5 1.0 0.5 0.0 i f - led current - ma nctrce - normalized ctrce normalized to: v ce =5v i f =2ma v ce =5v v ce =1v fig. 3 normalized non-saturated and saturated ctr ce vs. led current fig. 4 non-saturated and saturated collector emitter current vs. led current iIL66_03 0.0 0.2 0.4 0.6 0.8 1.0 1.2 .1 100 1000 if - led current - ma nctrce - normalized ctrce normalized to: v ce =5v i f =10ma 1 10 v ce =1v v ce =5v iIL66_04 i ce - collector-emitter current - ma .1 10 100 10000 1000 100 10 1 .1 .01 .001 i f - led current - ma 1 v ce =1v v ce =5v
vishay IL66/ ild66/ ilq66 document number 83638 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 5 fig. 5 collector-base photocurrent vs. led current fig. 6 collector-emitter current vs.led current fig. 7 non-saturated and saturated hfe vs. led current iIL66_05 .1 100 if - led current - ma icb - photocurrent - a .1 1 100 1000 110 10 iIL66_06 .1 10 100 1000 10000 1000 100 10 1 .1 .01 .001 v ce =1v v ce =5v i ce -collector-emitter current ma i b - base current - s 0 iIL66_07 .1 100 1000 25000 20000 15000 10000 5000 0 i b - base current - a hfe - forward gain v ce =5v v ce =1v 1 10 fig. 8 high to low propagation delay vs. collector load resistance and led current fig. 9 low to high propagation delay vs. collector load resistance and led current fig. 10 switching waveform iIL66_08 0 5 10 15 20 0 1 0 2 0 3 0 4 0 5 0 220 ? 10 k ? if-ledcurrent-ma vcc = 5 v vth = 1.5 v tphl - high/low propagation delay - s iIL66_09 10 15 20 0 25 50 75 100 125 150 220 k ? 2k ? 10 k ? if - led current - ma tplh - low/high propagation delay - s vcc = 5 v vth = 1.5 v 5 0 iIL66_10 i f t r v o t d t s t f t phl t plh v th =1.5 v
www.vishay.com 6 document number 83638 rev. 1.4, 20-apr-04 vishay IL66/ ild66/ ilq66 vishay semiconductors package dimensions in mm fig. 11 switching schematic iIL66_11 v o r l v cc =10 v f=10 khz, df=50% i f 14770
vishay IL66/ ild66/ ilq66 document number 83638 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 7 package dimensions in inches (mm) package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3?9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .255 (6.48) .265 (6.81) .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) 4 .100 (2.54)typ. 10 typ. 3?9 .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) pin one id .130 (3.30) .150 (3.81) .020(.51) .035 (.89) 87654321 910111213141516 .031(.79) .300 (7.62) typ. .230 (5.84) .250 (6.35) .050 (1.27) i178007 iso method a
www.vishay.com 8 document number 83638 rev. 1.4, 20-apr-04 vishay IL66/ ild66/ ilq66 vishay semiconductors .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18494 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9
vishay IL66/ ild66/ ilq66 document number 83638 rev. 1.4, 20-apr-04 vishay semiconductors www.vishay.com 9 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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