DMHC3025LSD document number: ds35821 rev. 4 - 2 1 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information 30v complementary enhancement mode mosfet h-bridge product summary device v (br)dss r ds(on) max i d max t a = +25c n-channel 30v 25m ? @ v gs = 10v 6.0 40m ? @ v gs = 4.5v 4.6 p-channel -30v 50m ? @ v gs = -10v -4.2 80m ? @ v gs = -4.5v -3.2 description this new generation complementary mosfet h-bridge features low on-resistance achievable with low gate drive. applications ? dc motor control ? dc-ac inverters features ? 2 x n + 2 x p channels in a soic package ? low on-resistance ? low input capacitance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMHC3025LSD-13 so-8 2500/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information top view internal schematic top view pin configuration so-8 h-bridge p1g p1s/p2s n2d/p2d p2g n2g n1s/n2s n1d/p1d n1g 1 4 8 5 c 3 0 2 5 l s y y w w = manufacturer?s marking c3025ls = product type marking code yyww = date code marking yy = year (ex: 09 = 2009) ww = week (01 - 53)
DMHC3025LSD document number: ds35821 rev. 4 - 2 2 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 1.5 w thermal resistance, junction to ambient (note 5) steady state r ja 83 c/w t < 10s 50 thermal resistance, junction to case r jc 14.5 operating and storage temperature range t j, t stg -55 to 150 c maximum ratings n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t a = +25 ? c t a = +70 ? c i d 6.0 4.8 a t < 10s t a = +25 ? c t a = +70 ? c i d 7.8 6.1 a continuous drain current (note 5) v gs = 4.5v steady state t a = +25 ? c t a = +70 ? c i d 4.6 3.6 a t < 10s t a = +25 ? c t a = +70 ? c i d 6.1 4.8 a maximum continuous body diode forward current (note 5) i s 2.5 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm 60 a maximum ratings p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t a = +25 ? c t a = +70 ? c i d -4.2 -3.3 a t < 10s t a = +25 ? c t a = +70 ? c i d -5.4 -4.3 a continuous drain current (note 5) v gs = -4.5v steady state t a = +25 ? c t a = +70 ? c i d -3.2 -2.5 a t < 10s t a = +25 ? c t a = +70 ? c i d -4.3 -3.3 a maximum continuous body diode forward current (note 5) i s -2.5 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -30 a note: 5. device mounted on fr-4 substrate pc boar d, 2oz copper, with 1inch square copper plate.
DMHC3025LSD document number: ds35821 rev. 4 - 2 3 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information electrical characteristics n-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? 0.5 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 1 a v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 1 ? 2 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) ? 19 25 m ? v gs = 10v, i d = 5a ? 26 40 v gs = 4.5v, i d = 4a forward transfer admittance |y fs | ? 4 ? s v ds = 5v, i d = 5a diode forward voltage v sd ? 0.70 1.2 v v gs = 0v, i s = 1.7a dynamic characteristics (note 7) input capacitance c iss ? 590 ? pf v ds = 15v, v gs = 0v, f = 1mhz output capacitance c oss ? 122 ? reverse transfer capacitance c rss ? 58 ? gate resistance r g ? 1.5 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g ? 5.4 ? nc v ds = 15v, i d = 7.8a total gate charge (v gs = 10v) q g ? 11.7 ? gate-source charge q g s ? 1.8 ? gate-drain charge q g d ? 2.1 ? turn-on delay time t d ( on ) ? 11.2 ? ns v dd = 15v, v gs = 4.5v, r l = 2.4 ? , r g = 1 ? , turn-on rise time t r ? 15 ? turn-off delay time t d ( off ) ? 17.5 ? turn-off fall time t f ? 8.7 ? reverse recovery time t r r ? 18.3 ? ns i f = 12a, di/dt = 500a/ s reverse recovery charge q r r ? 12 ? nc electrical characteristics p-channel (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -0.5 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 1 a v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -1 ? -2 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 43 50 m ? v gs = -10v, i d = -5a ? 68 80 v gs = -4.5v, i d = -4a forward transfer admittance |y fs | ? 3.5 ? s v ds = -5v, i d = -5a diode forward voltage v sd ? -0.7 -1.2 v v gs = 0v, i s = -1.7a dynamic characteristics (note 7) input capacitance c iss ? 631 ? pf v ds = -15v, v gs = 0v, f = 1mhz output capacitance c oss ? 137 ? pf reverse transfer capacitance c rss ? 70 ? pf gate resistance r g ? 10.8 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g ? 5.5 ? nc v ds = -15v, i d = -6a total gate charge (v gs = 10v) q g ? 11.4 ? nc gate-source charge q g s ? 1.8 ? nc gate-drain charge q g d ? 2.4 ? nc turn-on delay time t d ( on ) ? 7.5 ? ns v dd = -15v, v gs = -10v, r g = 6 ? , i d = -1a turn-on rise time t r ? 4.9 ? ns turn-off delay time t d ( off ) ? 28.2 ? ns turn-off fall time t f ? 13.5 ? ns reverse recovery time t r r ? 15.1 ? ns i f = 12a, di/dt = 500a/ s reverse recovery charge q r r ? 15.3 ? nc notes: 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to product testing.
DMHC3025LSD document number: ds35821 rev. 4 - 2 4 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information typical characteristics - n-channel 10 15 20 012 34 5 0 5 v , drain-source voltage (v) figure 1 typical output characteristic ds i, d r ain c u r r en t (a) d v= 2.5v gs v= 3.0v gs v= 3.5v gs v= 4.5v gs v = 10v gs v= 2.2v gs v= 3.0v gs v= 3.0v gs 0 2 4 6 8 10 12 14 16 18 20 01 2 3 45 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.01 0.02 0.03 0.04 0.05 024 6 8101214161820 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? v = 4.5v gs v = 10v gs 0 0.03 0.06 0.09 0.12 0.15 0 2 4 6 8 101214161820 v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? i= 5.0a d i= 4.0a d 0 2 4 6 8 101214161820 0.02 0.04 0.06 0.08 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? 0 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v= 4.5v gs 0.6 0.8 1.0 1.2 1.4 1.8 r , d r ain-s o u r c e on-resistance (normalized) ds(on) 1.6 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? v = 4.5v i= 5a gs d v=v i= 10a gs d 10
DMHC3025LSD document number: ds35821 rev. 4 - 2 5 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information 0.01 0.02 0.03 0.04 0.05 0.06 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v = 4.5v i= 5a gs d v=v i = 10a gs d 10 0.5 1.5 2.5 0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? i= 1ma d i = 250a d 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current 10 15 20 i, s o u r c e c u r r e n t (a) s 0 5 t= 25c a t = -55c a t= 85c a t= 125c a t = 150c a 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 10 typical junction capacitance 1,000 c , j u n c t i o n c a p a c i t a n c e (p f ) t 100 10 c iss c oss c rss f = 1mhz 0 2 4 6 8 10 12 q(nc) g , total gate charge figure 11 gate charge 0 2 4 6 8 v g a t e t h r es h o ld v o l t a g e (v) gs 10 v = 15v i= a ds d 7.8
DMHC3025LSD document number: ds35821 rev. 4 - 2 6 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information typical characteristics - p-channel 01 2 3 45 10 15 20 -i , d r ai n c u r r e n t (a) d 0 5 -v , drain -source voltage (v) figure 12 typical output characteristics ds v = -3.0v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v= -10v gs v = -5.0v gs v = -2.2v gs v = -2.5v gs 10 12 14 16 18 20 01 2 3 45 0 2 4 6 8 -v , gate-source voltage (v) gs figure 13 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a ? t = 125c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = -5.0v ds 0.02 0.04 0.06 0.08 0.12 0.14 0.16 0.18 0 2 4 6 8 101214161820 0.10 0 -i , drain source current (a) figure 14 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? v = -4.5v gs v = -10v gs 0.03 0.06 0.09 0.12 0.15 02 4 6 8101214161820 0 -v , gate-source voltage (v) gs figure 15 typical drain-source on-resistance vs. gate-source voltage r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i = -5.0a d i = -4.0a d 0.1 0.2 0.3 02 4 6 8101214161820 0 -i , drain source current (a) figure 16 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? t = -55c a ? t = 25c a ? t = 85c a ? t = 125c a ? t = 150c a ? v= -4.5v gs 0.6 0.8 1.2 1.4 1.6 1.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 17 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -5a gs d v = -10v i = -10a gs d
DMHC3025LSD document number: ds35821 rev. 4 - 2 7 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 18 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esistan c e ( ) ds(on) ? v= -10v i= a gs d -10 v=5v i= a gs d -4. -5 0.5 1.0 1.5 2.0 2.5 3.0 v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 19 gate threshold variation vs. ambient temperature a -i = 1ma d -i = 250a d 0 0.3 0.6 0.9 1.2 1.5 10 15 20 -i , s o u r c e c u r r e n t (a) s 0 5 -v , source-drain voltage (v) figure 20 diode forward voltage vs. current sd t= -55c a ? t= 25c a ? t= 85c a ? t= 125c a ? t= 150c a ? c , junction capacitance (pf) t 1,000 10 100 0 5 10 15 20 25 30 -v , drain-source voltage (v) figure 21 typical junction capacitance ds c oss c rss f = 1mhz c iss q , total gate charge (nc) figure 22 gate-charge characteristics g 0 2 4 6 8 -v , g ate-s o u r c e v o lta g e (v) gs 10 v = -15v i= -6a ds d
DMHC3025LSD document number: ds35821 rev. 4 - 2 8 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ?? 0 ? 8 ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
DMHC3025LSD document number: ds35821 rev. 4 - 2 9 of 9 www.diodes.com november 2013 ? diodes incorporated DMHC3025LSD new product advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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