ssf4607d 30v p-channel mosfet www.goodark.com page 1 of 8 rev.1.0 main product characteristics v dss -30v r ds (on) 19m(typ.) i d -25a features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v(silicon limited) -25 i d @ tc = 100c continuous drain current, v gs @ 10v -20 i dm pulsed drain current -60 a p d @tc = 25c power dissipation 41 w v ds drain-source voltage -30 v v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 c thermal resistance symbol characteristics typ. max. units r jc junction-to-case 3 /w junction-to-ambient (t 10s) 25 /w r ja junction-to-ambient (pcb mounted, steady-state) 50 /w marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. to-252 d g s
ssf4607d 30v p-channel mosfet www.goodark.com page 2 of 8 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 v v gs = 0v, i d = -250a 19 35 v gs =-10v,i d = -6a r ds(on) static drain-to-source on-resistance 29 58 m v gs =-4.5v,i d =-5a -1.2 -2.4 v ds = v gs , i d = -250a v gs(th) gate threshold voltage -1.4 v t j = 125 i dss drain-to-source leakage current -1 a v ds = -24v,v gs = 0v 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 27 q gs gate-to-source charge 3.6 q gd gate-to-drain("miller") charge 9.1 nc i d = -20a, v ds =-25v, v gs = -10v t d(on) turn-on delay time 10.7 t r rise time 39 t d(off) turn-off delay time 25.8 t f fall time 6.4 ns v gs =-10v, v ds =-15v, r l =0.75,i d =-20a c iss input capacitance 1188 c oss output capacitance 173 c rss reverse transfer capacitance 139 pf v gs = 0v, v ds =-15v, ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) -25 a i sm pulsed source current (body diode) -100 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage -0.77 -1 v i s =-1a, v gs =0v t rr reverse recovery time 23 ns q rr reverse recovery charge 14 nc t j = 25c, i f =-20a, di/dt = 100a/s
ssf4607d 30v p-channel mosfet www.goodark.com page 3 of 8 rev.1.0 test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. gate charge test circuit: switching time test circuit: eas test circuit:
ssf4607d 30v p-channel mosfet www.goodark.com page 4 of 8 rev.1.0 typical electrical and thermal characteristics figure 2. drain-to-source breakdown voltage vs. temperature figure 1: typical output characteristics figure 3. normalized on-resistance vs. case temperature figure 4: power dissipation vs. case temperature
ssf4607d 30v p-channel mosfet www.goodark.com page 5 of 8 rev.1.0 figure 5. maximum drain current vs case temperature typical electrical and thermal characteristics figure 6. gate-charge characteristics figure 7. typical capacitance vs. drain-to-source voltage
ssf4607d 30v p-channel mosfet www.goodark.com page 6 of 8 rev.1.0 typical electrical and thermal characteristics figure8.normalized maximum transient thermal impedance
ssf4607d 30v p-channel mosfet www.goodark.com page 7 of 8 rev.1.0 mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) to-252 package outline dimension
ssf4607d 30v p-channel mosfet www.goodark.com page 8 of 8 rev.1.0 ordering and marking information device marking: ssf4607d package (available) to-252(dpak) operating temperature range c : -55 to 150 oc devices per unit package type units/tape tapes/inner box units/inner box inner boxes/carton box units/carton box to-252 2500 1 2500 5 12500 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) tj=125 to 150 @ 80% of max v dss /v ces /v r 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) tj=150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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