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advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 1 general description the ap2820 is an integrated high-side power switch that consists of n-channel mosfet, charge pump, over current & temperature and other related protection circuits. the switch?s low r ds(on) , 60m , is designed to meet usb voltage drop requirements. the ic includes soft-start to limit inrush current, over-current protection, load short protection with fold-back, and thermal shutdown to avoid switch failure during hot plug-in. under voltage lockout (uvlo) function is used to ensure the device remain off unless there is a valid input voltage present. a flag output is available to indicate fault conditions to the local usb controller. the ap2820 is available in standard packages of soic-8 and msop-8. applications ? usb power management ? usb bus/self powered hubs ? hot-plug power supplies ? battery-charger circuits ? notebooks, motherboard pcs features ? low mosfet on resistance: 60m ? compliant to usb specifications ? available 2 versions of load ability: guarantee 2.0a continuous load for a/b/c/d version guarantee 2.5a continuous load for e/f/g/h version ? logic level enable pin: available with active-high or active-low version ? operating voltage range: 2.7v to 5.5v ? low supply current: 75 a (typ.) (for a/b/c/d versions) 80 a (typ.) (for e/f/g/h versions) ? low shutdown current: 1.0 a (max) ? under-voltage lockout ? soft start-up ? over-current protection ? over temperature protection ? load short protection with fold-back ? no reverse current when power off ? deglitched flag output with open drain ? with output shutdown pull-low resistor for a/c/e/g versions ? ul approved (file no. e339337) ? nemko cb scheme iec60950-1, ref. certif no. no62093 figure 1. package types of ap2820 soic-8 msop-8
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 2 pin configuration m/mm package soic-8/msop-8 figure 2. pin configurat ion of ap2820 (top view) pin descriptions pin number pin name function 1 gnd ground 2, 3 vin supply input pin 4 chip enable control input, active low or high 5 fault flag pin, output with open drain, need a pull-up resistor in application, active low to indicate ocp or otp 6, 7, 8 vout switch output voltage
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 3 functional block diagram figure 3. functional block diagram of ap2820
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 4 ordering information ap2820 - circuit type package temperature range condition part number marking id packing type soic-8 -40 to 85 c active high with auto discharge (continuous 2.0a) ap2820am-g1 2820am-g1 tube ap2820amtr-g1 2820am-g1 tape & reel active high without auto discharge (continuous 2.0a) ap2820bm-g1 2820bm-g1 tube ap2820bmtr-g1 2820bm-g1 tape & reel -40 to 85 c active low with auto discharge (continuous 2.0a) ap2820cm-g1 2820cm-g1 tube ap2820cmtr-g1 2820cm-g1 tape & reel active low without auto discharge (continuous 2.0a) ap2820dm-g1 2820dm-g1 tube ap2820dmtr-g1 2820dm-g1 tape & reel -40 to 85 c active high with auto discharge (continuous 2.5a) ap2820em-g1 2820em-g1 tube ap2820emtr-g1 2820em-g1 tape & reel active high without auto discharge (continuous 2.5a) ap2820fm-g1 2820fm-g1 tube ap2820fmtr-g1 2820fm-g1 tape & reel -40 to 85 c active low with auto discharge (continuous 2.5a) ap2820gm-g1 2820gm-g1 tube ap2820gmtr-g1 2820gm-g1 tape & reel active low without auto discharge (continuous 2.5a) ap2820hm-g1 2820hm-g1 tube ap2820hmtr-g1 2820hm-g1 tape & reel package m: soic-8 mm: msop-8 condition for continuous 2.0a versions a: active high w ith auto discharge b: active high without auto discharge c: active low with auto discharge d: active low without auto discharge for continuous 2.5a versions e: active high with auto discharge f: active high without auto discharge g: active low with auto discharge h: active low without auto discharge g1: green tr: tape & reel blank: tube
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 5 ordering information (continued) package temperature range condition part number marking id packing type msop-8 -40 to 85 c active high with auto discharge (continuous 2.0a) ap2820amm-g1 2820amm-g1 tube ap2820ammtr-g1 2820amm-g1 tape & reel active high without auto discharge (continuous 2.0a) ap2820bmm-g1 2820bmm-g1 tube ap2820bmmtr-g1 2820bmm-g1 tape & reel -40 to 85 c active low with auto discharge (continuous 2.0a) ap2820cmm-g1 2820cmm-g1 tube AP2820CMMTR-G1 2820cmm-g1 tape & reel active low without auto discharge (continuous 2.0a) ap2820dmm-g1 2820dmm-g1 tube ap2820dmmtr-g1 2820dmm-g1 tape & reel -40 to 85 c active high with auto discharge (continuous 2.5a) ap2820emm-g1 2820emm-g1 tube ap2820emmtr-g1 2820emm-g1 tape & reel active high without auto discharge (continuous 2.5a) ap2820fmm-g1 2820fmm-g1 tube ap2820fmmtr-g1 2820fmm-g1 tape & reel -40 to 85 c active low with auto discharge (continuous 2.5a) ap2820gmm-g1 2820gmm-g1 tube ap2820gmmtr-g1 2820gmm-g1 tape & reel active low without auto discharge (continuous 2.5a) ap2820hmm-g1 2820hmm-g1 tube ap2820hmmtr-g1 2820hmm-g1 tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green.
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 6 absolute maximum ratings (note 1) parameter symbol value unit power supply voltage v in 6.0 v operating junction temperature range t j 150 oc storage temperature range t stg -65 to 150 oc lead temperature (soldering, 10sec) t lead 260 oc thermal resistance junction to ambient ja soic-8 135 o c / w msop-8 150 cdm (charge device model) 1000 v esd (human body model) 2000 v note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. recommended operating conditions parameter symbol min max unit supply voltage v in 2.7 5.5 v operating ambient temperature range t a -40 85 c
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 7 electrical characteristics for a/b/c/d versions (v in =5.0v, c in =2.2 f, c out =1.0 f, typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified) parameter symbol condition min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5v, i out =2.0a 60 80 m current limit i limit v out =4.0v 2.2 2.7 3.2 a supply current i supply v in =5v, no load 75 105 a fold-back short current i short v out =0 1.18 a shutdown supply current i shutdown chip disable, shutdown mode 0.1 1 a enable high input threshold v enh 1.6 5.5 v enable low input threshold v enl 0 1.0 v enable pin input current i en force 0v to 5v at en pin -1.0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out >v in 0.1 1.0 a output pull low resistance after shutdown r discharge ap2820a, ap2820c only 100 200 output turn-on time t on from enable active to 90% o f output 500 s flag pin delay time t dflg from over current fault condition to flag active 5 10 15 ms flag pin low voltage v flg i sink =5ma 35 70 mv flag pin leakage current i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 c thermal shutdown hysteresis t hyotsd 30 c
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 8 electrical characteristics (continued) for e/f/g/h versions (v in =5.0v, c in =2.2 f, c out =1.0 f, typical t a =25c, bold typeface applies over -40c t a 85c ranges, unless otherwise specified) parameter symbol condition min typ max unit input voltage range v in 2.7 5.5 v switch on resistance r ds(on) v in =5v, i out =2.5a 60 80 m current limit i limit v out =4.0v 2.8 3.4 4.2 a supply current i supply v in =5v, no load 80 110 a fold-back short current i short v out =0 1.18 a shutdown supply current i shutdown chip disable, shutdown mode 0.1 1 a enable high input threshold v enh 1.6 5.5 v enable low input threshold v enl 0 1.0 v enable pin input current i en force 0v to 5v at en pin -1.0 1.0 a under voltage lockou t threshold voltage v uvlo v in increasing from 0v 2.2 2.5 2.7 v under voltage hysteresis v uvlohy 0.2 v reverse current i reverse chip disable, v out >v in 0.1 1.0 a output pull low resistance after shutdown r discharge ap2820e, ap2820g only 100 200 output turn-on time t on from enable active to 90% o f output 500 s flag pin delay time t dflg from over current fault condition to flag active 5 10 15 ms flag pin low voltage v flg i sink =5ma 35 70 mv flag pin leakage current i leakage flag disable, force 5.0v 1.0 a thermal shutdown temperature t otsd 150 o c thermal shutdown hysteresis t hyotsd 30 o c
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 9 typical performance characteristics figure 4. supply current vs. ambient temperature figure 5. supply current vs. ambient temperature figure 6. supply current vs. supply voltage figure 7. current limit vs. supply voltage -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 supply current ( a) for ap2820a/b/c/d versions v in =5v enable active no load ambient temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 for ap2820e/f/g/h versions supply current ( a) ambient temperature ( o c) v in =5v enable active no load 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -10 0 10 20 30 40 50 60 70 80 90 100 for ap2820a/b/c/d versions supply current ( a) supply voltage (v) t a =-40 o c t a =25 o c t a =85 o c t a =25 o c enable active 3.0 3.5 4.0 4.5 5.0 5.5 2.0 2.2 2.4 2.6 2.8 3.0 for ap2820a/b/c/d versions current limit (a) t a =25 o c supply voltage (v) v in =5v enable active
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 10 typical performance characteristics (continued) figure 8. current limit vs. ambient temperature figure 9. current limit vs. ambient temperature figure 10. switch on resistance figure 11. switch on resistance vs. ambient temperature vs. ambient temperature -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 v in =5v enable active for ap2820a/b/c/d versions current limit (a) ambient temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.6 2.8 3.0 3.2 3.4 current limit (a) v in =5v enable active for ap2820e/f/g/h versions ambient temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 for ap2820a/b/c/d versions i out =2.0a v in =5v enable active switch on resistance (m ) ambient temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 10 20 30 40 50 60 70 80 90 100 for ap2820e/f/g/h versions i out =2.5a v in =5v enable active switch on resistance (m ) ambient temperature ( o c)
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 11 typical performance characteristics (continued) figure 12. switch on resistance vs. supply voltage figure 13. uvlo voltage vs. ambient temperature figure 14. flag delay time during over current figure 15. flag delay time during over current vs. ambient temperature vs. supply voltage 3.0 3.5 4.0 4.5 5.0 5.5 30 40 50 60 70 80 90 100 t a =25 o c switch on resistance (m ) supply voltage (v) i out =2.0a enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 v in falling ambient temperature ( o c) enable active v in rising under voltage lockout threshold voltage (v) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 5 6 7 8 9 10 11 12 13 14 15 v in =5v enable active flag delay time during over current (ms) ambient temperature ( o c) 3.0 3.5 4.0 4.5 5.0 5.5 6 8 10 12 14 t a =25 o c supply voltage (v) v in =5v enable active flag delay time during over current (ms)
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 12 typical performance characteristics (continued) figure 16. output short to gnd current figure 17. output short to gnd current vs. supply voltage vs. ambient temperature figure 18. enable threshold voltage figure 19. enable threshold voltage vs. ambient temperature vs. supply voltage 3.0 3.5 4.0 4.5 5.0 1.00 1.02 1.04 1.06 1.08 1.10 1.12 1.14 1.16 1.18 1.20 1.22 1.24 1.26 1.28 1.30 supply voltage (v) output short to gnd current (a) v in =5v enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 ambient temperature ( o c) output short to gnd current (a) v in =5v enable active -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v en_h v en_l ambient temperature ( o c) v in =5v enable threshold voltage (v) 3.0 3.5 4.0 4.5 5.0 5.5 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 supply voltage (v) v en_h v en_l t a =25 o c enable threshold voltage (v)
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 13 typical performance characteristics (continued) figure 20. output turn on and rise time figure 21. output turn on and rise time (c in =1.0 f, c out =1.0 f, no load) (c in =1.0 f, c out =1.0 f, r l =3.3 ) figure 22. output turn on and rise time figure 23. output turn off and fall time (c in =1.0 f, c out =220 f, no load) (v in =5v, c in =1.0 f, no load) v en 5v/div i inrush 20ma/div time 500 s/div time 500 s/div time 500 s/div time 5ms/div v out 1v/div v en 5v/div i inrush 1a/div v out 1v/div v en 5v/div v out 1v/div i inrush 1a/div v en 5v/di v v out 1v/div c out =1 f c out =22 f c out =100 f c out =220 f c out =470 f
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 14 typical performance characteristics (continued) figure 24. output turn off and fall time figure 25. output short to gnd current (v in =5v, c in =1.0 f, c out =470 f, r l =3.3 ) (v in =5v, c in =1.0 f) figure 26. flag response during over current figure 27. flag response during over temperature (t a =125 o c) v en 5v/div i out 1a/div time 500 s/div time 20ms/div v out 1v/div v en 5v/div i out 1a/div v out 1v/div time 5ms/div time 5ms/div v flag 1v/div i out 1a/div v out 1v/div v flag 1v/div i out 1a/div v out 1v/div
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 15 typical application note 2: 2.2 f input capacitor is enough in most application cases. if the vout is short to ground frequently during usag e, large size input capacito r is necessary, recommend 22 f. figure 28. typical application of ap2820
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 16 mechanical dimensions soic-8 unit: mm(inch) r0.150(0.006)
advance datasheet high-side power distribution switch with enable and flag ap2820 jul. 2012 rev 1. 7 bcd semiconductor manufacturing limited 17 mechanical dimensions (continued) msop-8 unit: mm(inch) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 )
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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