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  1 publication order number : cph5871/d www.onsemi.com ? semiconductor component s industries, llc, 2015 march 2015 - rev. 2 ordering information see detailed ordering and shipping info rmation on page 6 of this data sheet. cph5871 features ? composite type with a n-channel sillicon mosfet and a schottky barrier diode contained in one package facilitating high-density mounting ? esd diode-protected gate ? pb-free, halogen free and rohs compliance [mosfet] ? high speed switching [mosfet] ? 1.8v drive [sbd] ? short reverse recovery time [sbd] ? low forward voltage specifications absolute maximum ratings at ta = 25 c parameter symbol value unit [mosfet] drain to source voltage v dss 30 v gate to source voltage v gss 12 v drain current (dc) i d 3.5 a drain current (pulse) pw 10 s, duty cycle 1% i dp 14 a power dissipation when mounted on ceramic substrate (600mm 2 0.8mm) 1unit p d 0.9 w junction temperature tj 150 c storage temperature tstg ? 55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 35 v average output current i o 1 a surge forward current 50hz sine wave, 1cycle i fsm 10 a junction temperature tj ? 55 to +125 c storage temperature tstg ? 55 to +125 c thermal resistance ratings parameter symbol value unit junction to ambient r ja 138.8 c/w when mounted on ceramic substrate (600mm 2 0.8mm) 1unit power mosfet 30v, 52m ? , 3.5a, single n-channel with schottky diode stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should n ot be assumed, damage may occur and reliability may be affected. electrical connection n-channel packing type : tl marking v dss r ds (on) max i d max [mosfet] 30v 52m ? @ 4.5v 3.5a 74m ? @ 2.5v 132m ? @ 1.8v tl yz lot no. 543 12 1:cathode 2:drain 3:gate 4:source 5:anode
cph5871 www.onsemi.com 2 electrical characteristics at ta = 25 c parameter symbol conditions value unit min typ max [mosfet] drain to source breakdown voltage v( br ) dss i d =1ma, v gs =0v 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0v 1 a gate to source leakage current i gss v gs = 8v, v ds =0v 10 a gate threshold voltage v gs (th) v ds =10v, i d =1ma 0.4 1.3 v forward transconductance g fs v ds =10v, i d =2a 2.0 3.4 s static drain to source on-state resistance r ds (on)1 i d =2a, v gs =4.5v 40 52 m r ds (on)2 i d =1a, v gs =2.5v 53 74 m r ds (on)3 i d =0.5a, v gs =1.8v 82 132 m input capacitance ciss v ds =10v, f=1mhz 430 pf output capacitance coss 59 pf reverse transfer capacitance crss 38 pf turn-on delay time t d (on) see specified test circuit 10 ns rise time t r 41 ns turn-off delay time t d (off) 36 ns fall time t f 37 ns total gate charge qg v ds =15v, v gs =4.5v, i d =3.5a 4.7 nc gate to source charge qgs 0.8 nc gate to drain ?miller? charge qgd 1.1 nc forward diode voltage v sd i s =3.5a, v gs =0v 0.8 1.2 v [sbd] reverse voltage v r i r =0.5ma 30 v forward voltage v f1 i f =0.7a 0.45 0.5 v v f2 i f =1a 0.48 0.53 v reverse current i r v r =16v 15 a interterminal capacitance c v r =10v, f=1mhz, 1cycle 27 pf reverse recovery time t rr i f = i r =100ma, see specified test circuit 10 ns switching time test circ uit trr test circuit (mosfet) (sbd) product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product per formance may not be indicated by the electrical characteristics if operated under different conditions. pw=10 s d.c.1% p .g 50 g s d i d =2a r l =7.5 v dd = 15v v out cph5871 v in 4.5v 0v v in d uty10 % 50 100 10 -- 5 v t rr 100ma 100ma 10ma 10 s
cph5871 www.onsemi.com 3
cph5871 www.onsemi.com 4
cph5871 www.onsemi.com 5
cph5871 www.onsemi.com 6 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc) or its subsidiaries in the united st ates and/or other countries. scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a lis ting of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . scillc reserves the right to make changes with out further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any parti cular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated fo r each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as com ponents in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees ar ising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that sci llc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject t oall applicable copyright laws and is not for resale in any manner. 0.6 2.4 1.4 0.95 0.95 package dimensions CPH5871-TL-H / cph5871-tl-w cph5 case 318bc issue o unit : mm 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode recommended soldering footprint ordering information device package shipping note CPH5871-TL-H cph5 sc-74a, sot-25 3,000 pcs. / tape & reel pb-free and halogen free cph5871-tl-w ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. http://www .onsemi.com/pub_link/co llateral/brd8011-d.pdf note on usage : since the cph5871 is a mosfet product, pl ease avoid using this device in the vicinity of highly charged objects.


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