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this is information on a product in full production. march 2014 docid023898 rev 4 1/14 STL4N10F7 n-channel 100 v, 0.062 ? typ., 4.5 a stripfet? vii deepgate? power mosfet in a powerflat? 3.3x3.3 package datasheet - production data figure 1. internal schematic diagram features ? n-channel enhancement mode ? lower r ds(on) x area vs previous generation ? 100% avalanche rated applications ? switching applications description this device utilizes the 7 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. powerflat? 3.3x3.3 1 2 3 4 d(5, 6, 7, 8) g(4) s(1, 2, 3) 8 123 4 7 6 5 am15810v1 order code v ds r ds(on) max i d STL4N10F7 100 v 0.07 4.5 a table 1. device summary order code marking package packaging STL4N10F7 4n1f7 powerflat? 3.3x3.3 tape and reel www.st.com
contents STL4N10F7 2/14 docid023898 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid023898 rev 4 3/14 STL4N10F7 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-amb drain current (continuous) at t amb = 25 c 4.5 a i d (1) drain current (continuous) at t amb =100 c 3.2 a i dm (1)(2) 2. pulse width limited by safe operating area. drain current (pulsed) 18 a i d (3) 3. this value is rated according to r thj-case drain current (continuous) at t c = 25 c 18 a i d (3) drain current (continuous) at t c = 100 c 11.25 a i dm (2)(3) drain current (pulsed) 72 a p tot (3) total dissipation at t c = 25 c 50 w p tot (1) total dissipation at t amb = 25 c 2.9 w t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.50 c/w r thj-amb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10sec thermal resistance junction-amb 42.8 c/w r thj-amb (2) 2. when mounted on fr-4 board of 1inch2, 2oz cu, steady state thermal resistance junction-amb 63.5 c/w
electrical characteristics STL4N10F7 4/14 docid023898 rev 4 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 1 a v ds = 100 v, t c = 125 c 100 a i gss gate body leakage current (v ds = 0) v gs = + 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4.5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 2.25 a 0.062 0.07 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =50 v, f=1 mhz, v gs =0 -408 - pf c oss output capacitance - 112 - pf c rss reverse transfer capacitance -10 - pf q g total gate charge v dd =50 v, i d = 4.5 a v gs =10 v (see figure 14) -7.8 - nc q gs gate-source charge - 3 - nc q gd gate-drain charge - 1.7 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =50 v, i d = 2.25 a, r g =4.7 , v gs = 10 v (see figure 13) -6.3 - ns t r rise time - 3 - ns t d(off) turn-off delay time - 11 - ns t f fall time - 4 - ns
docid023898 rev 4 5/14 STL4N10F7 electrical characteristics 14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 18 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 2.25 a, v gs =0 - 1.1 v t rr reverse recovery time i sd = 2.25 a, di/dt = 100 a/ s, v dd = 80 v, tj=150 c (see figure 18) -30 ns q rr reverse recovery charge - 24 nc i rrm reverse recovery current - 1.6 a
electrical characteristics STL4N10F7 6/14 docid023898 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100 s 10 s 1ms tj=150c tc=25c sinlge pulse 100 gipg120220140926sa =0.5 0.05 0.02 0.01 0.1 0.2 single pulse k t p (s) 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 zthpowerflat_3.3x3.3 i d 18 12 6 0 0 4 v ds (v) (a) 26 24 30 6 v 5 v 7 v 8 v 9 v v gs = 10 v 8 gipg200120141028fsr i d 15 10 5 0 4 v gs (v) (a) 26 20 25 30 v ds = 9v 10 8 gipg200120141040fsr v gs 6 4 2 0 4 q g (nc) (v) 26 8 10 12 v dd = 50v i d = 4.5a 10 8 gipg200120141048fsr r ds(on) 62 61.6 61.2 60.8 0.5 1.5 i d (a) (m ) 1 2 62.4 v gs =10v 2.5 gipg210120141012fsr
docid023898 rev 4 7/14 STL4N10F7 electrical characteristics 14 figure 8. capacitance variations figure 9. normalized v (br)dss vs temperature figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics c 400 300 200 100 0 40 v ds (v) (pf) 20 500 60 ciss coss crss 80 0 gipg200120141330fsr v (br)dss 1.0 0.98 0.96 -75 t j (c) (norm) -25 75 25 125 1.02 1.04 i d = 250 a gipg210120141040fsr v gs(th) 0.8 0.7 0.6 -75 t j (c) (norm) -25 1.1 75 25 125 0.9 1 i d =250 a v ds =v gs gipg210120141021fsr r ds(on) 1.3 0.9 0.5 -75 t j (c) (norm) -25 75 25 125 1.7 v gs =10 v i d =2.25 a gipg210120141030fsr v sd 0.5 1.5 i sd (a) (v) 1 2 2.5 0.4 0.6 0.8 t j =-55c t j =175c t j =25c 1.0 1.2 gipg210120141051fsr
test circuits STL4N10F7 8/14 docid023898 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid023898 rev 4 9/14 STL4N10F7 package mechanical data 14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL4N10F7 10/14 docid023898 rev 4 figure 19. powerflat? 3.3 x 3.3 drawing bottom view side view top view 8465286_a
docid023898 rev 4 11/14 STL4N10F7 package mechanical data 14 table 8. powerflat? 3.3 x 3.3 mechanical data dim. mm min. typ. max. a0.700.800.90 b0.250.300.39 c0.140.150.20 d3.103.303.50 d1 3.05 3.15 3.25 d2 2.15 2.25 2.35 e0.550.650.75 e3.103.303.50 e1 2.90 3.00 3.10 e2 1.60 1.70 1.80 h0.250.400.55 k0.650.750.85 l0.300.450.60 l1 0.05 0.15 0.25 l2 0.15 ? 8 10 12
package mechanical data STL4N10F7 12/14 docid023898 rev 4 figure 20. powerflat? 3.3 x 3.3 recommended footprint 8465286_footprint
docid023898 rev 4 13/14 STL4N10F7 revision history 14 5 revision history table 9. document revision history date revision changes 10-jul-2013 1 first release. 21-jan-2014 2 ? inserted section 2.1: electrical characteristics (curves) . ? document status promoted form preliminary to production data. 19-feb-2014 3 ? added: i d (at t c =25 c and 125 c), i dm and p tot in table 2 ? modified: figure 2 and 3 ? minor text changes 10-mar-2014 4 ? modified: marking in table 1 ? minor text changes
STL4N10F7 14/14 docid023898 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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