1/9 november 2002 STGW50NB60H n-channel 50a - 600v -to-247 powermesh? igbt ( l ) pulse width limited by safe operating area n high input impedance (voltage driven) n low on-voltage drop (v cesat ) n low gate charge n high current capability n very high frequency operation n off losses include tail current description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has de- signed an advanced family of igbts, the power- mesh ? igbts, with outstanding performances. the suffix "h" identifies a family optimized to achieve very low switching times for high frequency applications (<120khz). applications n high frequency motor controls n welding equipments n smps and pfc in both hard switch and resonant topologies absolute maximum ratings type v ces v ce(sat) (max) i c STGW50NB60H 600 v < 2.8 v50a symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collettor voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c =25c 100 a i c collector current (continuous) at t c =100c 50 a i cm ( ) collector current (pulsed) 400 a p tot total dissipation at t c = 25c 250 w derating factor 2 w/c t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c to-247 1 2 3 internal schematic diagram
STGW50NB60H 2/9 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (*) dynamic switching on rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-h thermal resistance case-heatsink typ 0.1 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 10 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250 a 35v v ce(sat) collector-emitter saturation voltage v ge =15 v, i c =50 a v ge =15 v, i c =30 a , t c =125c 2.3 1.9 2.8 v v symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =50a 22 s c ies input capacitance v ce =25v,f=1mhz,v ge =0 4500 pf c oes output capacitance 450 pf c res reverse transfer capacitance 90 pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480 v, i c =50a, v ge =15v 260 28 115 nc nc nc i cl latching current v clamp = 480 v , r g =10 w v ge =15 v , tj = 150c 300 a symbol parameter test conditions min. typ. max. unit t d(on) delay time v cc =480v,i c =50a v ge =15v,r g =10 w 30 ns t r rise time 110 ns (di/dt) on eon turn-on current slope turn-on switching losses v cc = 480 v, i c =50a, r g =10 w v ge =15v, tj = 125c 600 600 a/s j
3/9 STGW50NB60H electrical characteristics (continued) switching off note: (*)pulsed: pulse duration = 300 s, duty cycle 1.5 %. (**)losses include also the tail (jedec standardization) symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =50a, r ge =10 w ,v ge =15v 166 ns t r (v off ) off voltage rise time 48 ns t d ( off ) delay time 326 ns t f fall time 100 ns e off (**) turn-off switching loss 2.1 mj e ts total switching loss 2.7 mj t c cross-over time v cc = 480 v, i c =50a, r ge =10 w ,v ge =15v tj = 125 c 270 ns t r (v off ) off voltage rise time 75 ns t d ( off ) delay time 320 ns t f fall time 200 ns e off (**) turn-off switching loss 2.9 mj e ts total switching loss 3.5 mj
STGW50NB60H 4/9 transconductance transfer characteristics output characteristics normalized gate threshold voltage vs temp. thermal impedance switching off safe operating area
5/9 STGW50NB60H total switching losses vs temperature total switching losses vs gate resistance collector-emitter on voltage vs temperature normalized break-down voltage vs temp. gate-charge vs gate-emitter voltage capacitance variations
STGW50NB60H 6/9 total switching losses vs ic
7/9 STGW50NB60H fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit fig. 3: switching waveforms
STGW50NB60H 8/9 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 d 2.20 2.60 0.08 0.10 e 0.40 0.80 0.015 0.03 f 1 1.40 0.04 0.05 f1 3 0.11 f2 2 0.07 f3 2 2.40 0.07 0.09 f4 3 3.40 0.11 0.13 g 10.90 0.43 h 15.45 15.75 0.60 0.62 l 19.85 20.15 0.78 0.79 l1 3.70 4.30 0.14 0.17 l2 18.50 0.72 l3 14.20 14.80 0.56 0.58 l4 34.60 1.36 l5 5.50 0.21 m 2 3 0.07 0.11 v 5o 5o v2 60o 60o dia 3.55 3.65 0.14 0.143 to-247 mechanical data
9/9 STGW50NB60H information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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