FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 1 march 2013 FCD4N60 n-channel superfet ? mosfet 600 v, 3.9 a, 1.2 features ? 650v @t j = 150c ?typ. r ds(on) = 1.0 ? ultra low gate charge (typ. q g = 12.8 nc) ? low effective output capacitance (typ. c oss .eff = 32 pf) ? 100% avalanche tested ? rohs compliant application ? lighting ? solar inverter ? ac-dc power supply description superfet ? mosfet is fairch ild semiconductor ? ?s first genera- tion of high voltage super-junction (s j) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance. this technology is tai- lored to minimize conduction lo ss, provide superior switching performance, dv/dt rate and higher avalanche energy. conse- quently, superfet mosfet is very suitable for the switching power applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCD4N60 unit v dss drain to source voltage 600 v i d drain current -continuous (t c = 25 o c) 3.9 a -continuous (t c = 100 o c) 2.5 i dm drain current - pulsed (note 1) 11.7 a v gss gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 128 mj i ar avalanche current (note 1) 3.9 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 50 w - derate above 25 o c0.4w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCD4N60 unit r jc thermal resistance, junction to case, max 2.5 o c/w r ja thermal resistance, junction to ambient, max 83 o c/w *drain current limited by maximum junction temperature d-pak gs d d g s
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCD4N60 FCD4N60tm d-pak 380mm 16m 2500 FCD4N60 FCD4N60tf d-pak 380mm 16m 2500 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage v gs = 0 v, i d = 250 a, t c = 25 o c 600 - - v v gs = 0 v, i d = 250 a, t c = 150 o c- 650 - v bv dss t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c-0.6-v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 3.9 a - 700 - v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.0 a - 1.0 1.2 g fs forward transconductance v ds = 40 v, i d = 2.0 a (note 4) -3.2-s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1.0 mhz - 415 540 pf c oss output capacitance - 210 275 pf c rss reverse transfer capacitance - 19.5 - pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1.0 mhz - 12 16 pf c oss eff. effective output capacitance v ds = 0 v to 400 v, v gs = 0 v - 32 - pf t d(on) turn-on delay time v dd = 300 v, i d = 3.9 a r g = 25 (note 4, 5) -1645ns t r turn-on rise time - 45 100 ns t d(off) turn-off delay time - 36 85 ns t f turn-off fall time - 30 70 ns q g(tot) total gate charge at 10v v ds = 480 v, i d = 3.9 a, v gs = 10 v (note 4, 5) - 12.8 16.6 nc q gs gate to source gate charge - 2.4 - nc q gd gate to drain ?miller? charge - 7.1 - nc i s maximum continuous drain to source diode forward current - - 3.9 a i sm maximum pulsed drain to source diode forward current - - 11.7 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 11 a - - 1.4 v t rr reverse recovery time v gs = 0 v, i sd = 11 a di f /dt = 100 a/ s (note 4) - 277 - ns q rr reverse recovery charge - 2.07 - c notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. i as = 1.9 a, v dd = 50 v, r g = 25 , starting t j = 25 c 3. i sd 3.9 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 246810 10 -1 10 0 10 1 * note 1. v ds = 40v 2. 250 s pulse test -55 o c 150 o c 25 o c i d , drain current [a] v gs , gate-source voltage [v] 0.1 1 10 0.1 1 10 v gs top : 15.0 v 10.0 v 8.0v 7.5 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 10 -1 10 0 10 1 25 o c 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 0.0 2.5 5.0 7.5 10.0 12.5 0 1 2 3 4 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ],drain-source on-resistance i d , drain current [a] 10 0 10 1 0 200 400 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 5 10 15 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v * note : i d = 3.9a v gs , gate-source voltage [v] q g , total gate charge [nc]
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11-1. transient thermal respon se curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes : 1. v gs = 10 v 2. i d = 2.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 1 2 3 4 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 us operation in this area is limited by r ds(on) dc 10 ms 1 ms 100 us * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 2.5 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms
FCD4N60 n-channel mosfet ?2008 fairchild semiconductor corporation FCD4N60 rev. c0 www.fairchildsemi.com 7 mechanical dimensions dimensions in millimeters d-pak
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