tm FFD10UP20S 10 a, 200 v, ultrafast diode ?2007 fairchild semiconductor corporation FFD10UP20S rev. a1 www.fairchildsemi.com 1 FFD10UP20S features ? ultrafast recovery, t rr = 20.8 ns (@ i f = 10 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage : v rrm = 200 v ? avalanche energy rated applications ? power switching circuits ? output rectifiers ? freewheeling diodes ? switching mode power supply absolute maximum ratings t c = 25 o c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter rating unit v rrm peak repetitive reverse voltage 200 v i f(av) average rectified forward current @ t c = 115 o c 10 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j , t stg operating and storage temperature range -65 to +150 o c symbol parameter rating unit r jc maximum thermal resistance, junction to case 3.0 o c/w device marking device package reel size tape width quantity f10up20s FFD10UP20S to-252 13? dia - 2500 july 2007 ? rohs compliant 10 a, 200 v, ultrafast diode the FFD10UP20S is an ultrafas t diode with low forward voltage drop and rugged uis capability. this device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applic ations . it is specially s uited for use in switching power supplies and industrial applicationa as welder and ups application.
FFD10UP20S 10 a, 200 v, ultrafast diode www.fairchildsemi.com 2 electrical characteristics t c = 25 o c unless otherwise noted test circuit and waveforms symbol parameter min. typ. max. unit v f * maximum instantaneous forward voltage i f = 10 a i f = 10 a t c = 25 o c t c = 100 o c - - - - 1.15 1.10 v i r * maximum instantaneous reverse current @ rated v r t c = 25 o c t c = 100 o c - - - - 100 500 a t rr i rr q rr reverse recovery time reverse recovery current reverse recovery charge (i f = 10 a, di/dt = 200 a/ s) - - - 20.8 2.8 28.5 - - - ns a nc t rr maximum revers e recovery time (i f = 1 a, di/dt = 100 a/s) - - 35 ns w avl avalanche energy ( l = 40 mh) 10 - - mj * * pulse test: pulse width = 300 s, duty cycle = 2% ?200 7 fairchild semiconductor corporation FFD10UP20S rev. a 1
FFD10UP20S 10 a, 200 v, ultrafast diode www.fairchildsemi.com 3 typical performance characteristics 40 80 120 160 200 0.1 1 10 100 1000 t c = 25 o c t c = 100 o c reverse current , i r [ na ] reverse voltage, v r [v] 10 0.0 0.5 1.0 1.5 2.0 0.1 1 10 t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 50 figure 1. typical forward voltage drop vs. forward current figure 2. typical reverse current vs. reverse voltage vs. di/dt 10 -1 10 0 10 1 10 2 0 30 60 90 120 150 capacitances , cj [pf] reverse voltage, v r [v] typical capacitance at 0v = 129 pf 50 100 150 200 250 20 25 30 35 40 t c = 25 o c t c = 100 o c reverse recovery time, t rr [ns] di/dt [ a/ s ] i f = 10a figure 5. typical reverse recovery current vs. di/dt figure 6. forward current derating curve 50 100 150 200 250 0 1 2 3 4 5 6 t c = 25 o c t c = 100 o c reverse recovery current, i rr [a] di/dt [ a/ s ] i f = 10a 25 50 75 100 125 150 0 4 8 12 16 20 24 28 32 average forward current, i f(av) [a] case temperature, t c [ o c ] dc figure 3. typical junction capacitance figure 4. typical reverse recovery time ?200 7 fairchild semiconductor corporation FFD10UP20S rev. a 1
b 2 e d l 3 b 1 b 12 a l c seating back view h 1 a 1 b 3 e 1 j 1 l 1 term. 3 0.265 minimum pad size recommended for surface-mounted applications (6.7) 0.265 (6.7 ) 0.070 (1.8) 0.118 (3.0) 0.063 (1.6) typ 0.090 (2.3) typ plane symbol inches millimeters notes min max min max a 0.086 0.094 2.19 2.38 - a 1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72 0.81 3, 4 b 1 0.033 0.040 0.84 1.01 3 b 2 0.205 0.215 5.21 5.46 3, 4 b 3 0.190 - 4.83 - 2 c 0.018 0.022 0.46 0.55 3, 4 d 0.270 0.290 6.86 7.36 - e 0.250 0.265 6.35 6.73 - e 1 0.180 bsc 4.57 bsc 6 h 1 0.035 0.045 0.89 1.14 - j 1 0.040 0.045 1.02 1.14 - l 0.100 0.115 2.54 2.92 - l 1 0.020 - 0.51 - 3, 5 l 3 0.170 - 4.32 - 2 notes: 1. no current jedec outline for this package. 2. l 3 and b 3 dimensions establish a minimum mounting surface for terminal 3. 3. dimension (without solder). 4. add typically 0.002 inches (0.05mm) for solder plating. 5. l 1 is the terminal length for soldering. 6. position of lead to be measured 0.090 inches (2.28mm) from bottom of dimension d. 7. controlling dimension: inch. 8. revision 8 dated 5-99. mechanical dimensions dimensions in millimeters d-pak FFD10UP20S 10 a, 200 v, ultrafast diode 4 www.fairchildsemi.com ?200 7 fairchild semiconductor corporation FFD10UP20S rev. a 1
FFD10UP20S 10 a, 200 v, ultrafast diode www.fairchildsemi.com 5 ?200 7 fairchild semiconductor corporation FFD10UP20S rev. a 1
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