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10-FY06RIA080MF-M537D68 preliminary datasheet flowsol 1 ri 650v/80m ? low inductive 12mm flow1 package rectifier bridge: ultra fast rectifier bridge inverter: pseudo h-bridge topology trench igbt + fast fwd mosfet 650v/80mohm cfd + ultrafast fwd integrated dc-capacitors temperature sensor solar inverter: 10-FY06RIA080MF-M537D68 fast rectifier diode ( d1 , d2 , d3 , d4 ) repetitive peak reverse voltage v rrm 600 v sine,d=0.5 t h =80c 42 t j =t j max t c =80c 56 surge forward current i fsm t p =1 ms tj=25c 100 a i 2 t tp=10ms tj=125c 330 a 2 s t h =80c 59 t c =80c 90 maximum junction temperature t j max 175 c low side mosfet ( t1 , t2 ) t h =80c 20 t c =80c 23 t h =80c 77 t c =80c 116 150 t j =t j max i d t p limited by t j max w 650 t j =t j max a c v a v dc drain current maximum junction temperature power dissipation t j max pulsed drain current gate-source peak voltage vgs i dpulse p tot t j =t j max features flow1 12mm housing drain to source breakdown voltage v ds a w forward average current i2t-value power dissipation per thyristor p tot i fav 30 target applications schematic secondary of high efficient transformer-based solar inverter with unipolar or bipolar modulation types tc=25c 137 1 revi sion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet high side igbt ( t3 , t4 ) t h =80c 38 t c =80c 44 t h =80c 88 t c =80c 134 t sc t j 150c 6 s v cc v ge =15v 360 v low side fwd ( d5 , d6 ) t h =80c 26 t c =80c 35 t h =80c 45 t c =80c 68 high side inverse diode ( d9 , d10 ) t h =80c 19 t c =80c 26 t h =80c 37 t c =80c 57 high side fwd ( d7 , d8 ) t h =80c 24 t c =80c 32 t h =80c 40 t c =80c 61 600 v rrm i f 600 20 peak repetitive reverse voltage repetitive peak forward current i frm t c =25c repetitive peak forward current power dissipation per diode maximum junction temperature v ce i f dc collector current gate-emitter peak voltage power dissipation per igbt i frm peak repetitive reverse voltage p tot t j max t p limited by t j max t j =t j max v rrm t j =25c v ge i c p tot t j =25c v t j =t j max collector-emitter break down voltage w v a a t j =25c 600 v t p limited by t j max w 175 t j =t j max t j =t j max c c a v w t p limited by t j max a 175 150 dc forward current i f dc forward current t j max maximum junction temperature power dissipation per diode p tot peak repetitive reverse voltage dc forward current maximum junction temperature i c pulse t j max repetitive peak collector current short circuit ratings t j max 175 a a w a c a c v 40 600 v rrm maximum junction temperature power dissipation per diode p tot repetitive peak forward current i frm t j =t j max t j =t j max t j =t j max t j =t j max t p limited by t j max 150 20 30 2 revi sion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet dc link capacitor ( c1 ) tc=25c thermal properties insulation properties v is t=2s dc voltage 4000 vdc min 12,7 mm min 12,7 mm max.dc voltage v max v 500 c -40?+125 c -40?+(tjmax - 25) clearance insulation voltage creepage distance t op operation temperature under switching condition storage temperature t stg 3 revi sion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 1,2 1,58 1,9 t j =150c 1,55 t j =25c 1,08 t j =150c 0,92 t j =25c 0,01 t j =150c 0,01 t j =25c 0,027 t j =150c thermal resistance chip to heatsink per chip r thjh 1,60 thermal resistance chip to case per chip r thjc 1,06 t j =25c 90 t j =125c 190 t j =25c 3,5 4 4,5 t j =125c t j =25c 100 t j =125c t j =25c 1000 t j =125c t j =25c 32 t j =125c 33 t j =25c 7,8 t j =125c 8,8 t j =25c 195 t j =125c 206 t j =25c 3,5 t j =125c 4,4 t j =25c 0,21 t j =125c 0,41 t j =25c 0,08 t j =125c 0,07 thermal resistance chip to case per chip r thjc 0,60 100 k/w 0,00176 650 400 480 0 26 20 0 0/10 10 f=1mhz t r t d(off) rgon=8 ? 0 20 c rss v (gs)th i gss i dss thermal resistance chip to heatsink per chip v ds =v gs t d(on) r ds(on) r thjh thermal grease thickness 50um = 1 w/mk e off q g c iss c oss q gs q gd r t i r slope resistance (for power loss calc. only) reverse current thermal grease thickness 50um = 1 w/mk value conditions characteristic values threshold voltage (for power loss calc. only) fast rectifier diode ( d1 , d2 , d3 , d4 ) forward voltage v f v to v 50 v 50 600 50 tbd 120 na pf ns na nc total gate charge input capacitance output capacitance e on turn-off energy loss per pulse turn-on energy loss per pulse turn off delay time fall time t f 0,91 tj=25c tj=25c 25 static drain to source on resistance low side mosfet ( t1 , t2 ) gate threshold voltage rise time gate to source leakage current turn on delay time zero gate voltage drain current reverse transfer capacitance gate to drain charge gate to source charge rgoff=8 ? 215 170 5030 mws m ? v ma m ? k/w 4 revisio n: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values t j =25c 5 5,8 6,5 t j =150c t j =25c 1,05 1,43 1,85 t j =150c 1,57 t j =25c 0,0026 t j =150c t j =25c 600 t j =150c t j =25c t j =150c t j =25c 84 t j =150c 86 t j =25c 10 t j =150c 11 t j =25c 194 t j =150c 237 t j =25c 97 t j =150c 80 t j =25c 0,36 t j =150c 0,48 t j =25c 0,74 t j =150c 1,00 thermal resistance chip to heatsink per chip r thjh 1,08 thermal resistance chip to case per chip r thjc 0,71 t j =25c 1,26 1,70 1,95 t j =125c 1,58 t j =25c 25 t j =125c 30 t j =25c 134 t j =125c 195 t j =25c 0,88 t j =125c 1,72 di ( rec ) max t j =25c 5040 /d t t j =125c 1874 t j =25c 0,24 t j =125c 0,50 thermal resistance chip to heatsink per chip r thjh 2,37 thermal resistance chip to case per chip r thjc 1,56 t j =25c 1,25 1,68 1,95 tj=125c 1,54 thermal resistance chip to heatsink per chip r thjh 2,54 thermal resistance chip to case per chip r thjc 1,68 none 0 15 400 400 480 25 15 mws k/w k/w v 0 600 30 0 15 reverse recovery time input capacitance gate charge c rss c ies reverse transfer capacitance c oss high side fwd ( d7 , d8 ) peak reverse recovery current t rr q gate e rec reverse recovered charge q rr v f i rrm diode forward voltage peak rate of fall of recovery current reverse recovery energy diode forward voltage v f high side inverse diode ( d9 , d10 ) high side igbt ( t3 , t4 ) turn-off energy loss per pulse turn-on energy loss per pulse integrated gate resistor t d(on) e off t d(off) e on turn-off delay time t f turn-on delay time gate emitter threshold voltage rgon=8 ? rgoff=8 ? fall time v ge =v ce r gint i ges t r v ce(sat) collector-emitter cut-off incl diode i ces gate-emitter leakage current thermal grease thickness 50um = 1 w/mk v ge(th) output capacitance rise time collector-emitter saturation voltage thermal grease thickness 50um = 1 w/mk 15 f=1mhz rgon=8 ? thermal grease thickness 50um = 1 w/mk 20 20 tj=25c tj=25c 20 0,004 50 50 93 200 310 3140 a/ s nc v ns v na v ma a mws mws ns ns ns pf pf pf ? c ns 20 k/w 5 revisio n: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max value conditions characteristic values t j =25c 2,23 2,6 t j =150c 1,97 t j =25c 100 t j =150c t j =25c 23 t j =150c 34 t j =25c 15 t j =150c 33 t j =25c 0,21 t j =150c 0,68 di ( rec ) max t j =25c 6876 /d t t j =150c 1756 t j =25c 0,02 t j =150c 0,07 thermal resistance chip to heatsink per chip r thjh 1,55 thermal resistance chip to case per chip r thjc 1,02 2 -5 a v 20 % nf 120 ? c a/ s k/w mws peak reverse recovery current ns a mw/k deviation of r25 mw 200 power dissipation constant r100=1486 ? t rr reverse recovery time peak rate of fall of recovery current c value rated resistance r low side fwd ( d5 , d6 ) power dissipation p thermistor r/r 30 rgon=8 ? 10 i rrm diode forward voltage reverse leakage current v f i r reverse recovered charge reverse recovery energy dc link capacitor ( c1 ) c q rr e rec 400 thermal grease thickness 50um = 1 w/mk tj=25c tj=25c tc=100c tj=25c 600 tj=25c b-value b (25/50) tol. 3% b-value b (25/100) tol. 3% vincotech ntc reference k tj=25c b tj=25c 3996 k 3950 22000 +5 6 revisio n: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 1 mosfet figure 2 mosfet typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 0 v to 20 v in steps of 2 v v ge from 0 v to 20 v in steps of 2 v figure 3 mosfet figure 4 fwd typical transfer characteristics typical fwd forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v low side typical output characteristics low side mosfet and high side fwd 0 20 40 60 80 100 120 0 5 10 15 20 v ce (v) i c (a) 0 5 10 15 20 25 30 02468 v ge (v) i c (a) t j = 25c t j = t j ma x -25c 0 30 60 90 120 150 012345 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 20 40 60 80 100 120 0 5 10 15 20 v ce (v) i c (a) 7 revis ion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 5 mosfet figure 6 mosfet typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 400 v v ce = 400 v v ge = 10 v v ge = 10 v r gon = 8,0 ? i c = 20 a r goff = 8,0 ? figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 400 v v ce = 400 v v ge = 10 v v ge = 10 v r gon = 8,0 ? i c = 20 a low side low side mosfet and high side fwd e on high t e off high t e on low t e off low t 0 0,2 0,4 0,6 0,8 1 0 10203040 i c (a) e (mws) e off high t e off low t 0 0,2 0,4 0,6 0,8 1 0 10203040 r g ( ? ) e (mws) e on low t e on high t e rec low t 0 0,02 0,04 0,06 0,08 0,1 0 1 02 03 04 0 i c (a) e (mws) e rec high t e rec high t e rec low t 0 0,02 0,04 0,06 0,08 0,1 0 1 02 03 04 0 r g ( ? ) e (mws) 8 revis ion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 9 mosfet figure 10 mosfet typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 400 v v ce = 400 v v ge = 10 v v ge = 10 v r gon = 8,0 ? i c = 20 a r goff = 8,0 ? figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 20 a r gon = 8,0 ? v ge = 10 v low side low side mosfet and high side fwd t doff t f t don t r 0,00 0,01 0,10 1,00 0 10203040 i c (a) t (ms) t rr high t t rr low t 0,00 0,02 0,04 0,06 0,08 0 10203040 r gon ( ? ) t rr (ms) t doff t f t don t r 0,00 0,01 0,10 1,00 0 1 02 03 04 0 r g ( ? ) t (ms) t rr high t t rr low t 0,00 0,01 0,02 0,03 0,04 0,05 0 10203040 i c (a) t rr (ms) 9 revis ion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 20 a r gon = 8,0 ? v ge = 10 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 20 a r gon = 8,0 ? v ge = 10 v low side low side mosfet and high side fwd i rrm high t i rrm low t 0 20 40 60 80 0 10203040 r gon ( ? ) i rrm (a) q rr high t q rr low t 0 0,2 0,4 0,6 0,8 1 0 10203040 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 10 20 30 40 0 10203040 i c (a) i rrm (a) q rr high t q rr low t 0 0,2 0,4 0,6 0,8 1 0 10203040 i c (a) q rr (mc) 10 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 400 v v r = 400 v v ge = 10 v i f = 20 a r gon = 8,0 ? v ge = 10 v figure 19 mosfet figure 20 fwd igbt transient thermal impedance f wd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 0,91 k/w r thjh = 1,55 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,02 7,4e+00 0,04 6,1e+00 0,10 1,4e+00 0,12 1,1e+00 0,28 3,1e-01 0,48 2,3e-01 0,37 1,2e-01 0,46 7,5e-02 0,10 1,0e-02 0,32 1,4e-02 0,04 5,5e-04 0,13 1,7e-03 low side low side mosfet and high side fwd t p (s) z thjh (k/w) 10 0 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 5000 10000 15000 20000 25000 0 10203040 r gon ( ? ) di rec / dt (a/ms) di rec /dt t di 0 /dt t di rec /dt t di o /dt t 0 2000 4000 6000 8000 0 10203040 i c (a) di rec / dt (a/ms) 11 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 21 mosfet figure 22 mosfet power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 150 c t j = 150 c v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 150 c t j = 150 c low side mosfet and high side fwd low side 0 30 60 90 120 150 180 0 50 100 150 t h ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 t h ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 t h ( o c) i f (a) 12 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 25 mosfet figure 26 mosfet safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(q g ) at at d = single pulse i c = 43 a th = 80 oc v ge = 15 v t j =t jmax oc figure 27 mosfet reverse bias safe operating area i c = f(v ce ) at t j =t jmax -25 oc u ccminus =u ccplus switching mode : 3 level switching low side mosfet and high side fwd low side v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 1 100us 1ms 10m s 100ms dc 10 0 10 3 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 q g (nc) v ge (v) 120v 480v 0 20 40 60 80 100 0 200 400 600 800 1000 1200 1400 v ce (v) i c (a) i c max v ce max i c module i c chip 13 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 1 igbt figure 2 igbt typical output characteristics typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 igbt figure 4 fwd typical transfer characteristics typical fwd forward current as i c = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v high side high side igbt and low side fwd 0 50 100 150 200 250 012345 v ce (v) i c (a) 0 10 20 30 40 50 024681012 v ge (v) i c (a) t j = 25c t j = t jmax -25c 0 25 50 75 100 125 150 012345 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 50 100 150 200 250 012345 v ce (v) i c (a) 14 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 5 igbt figure 6 igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 200 v v ce = 200 v v ge = 15 v v ge = 15 v r gon = 8,0 ? i c = 20 a r goff = 8,0 ? figure 7 fwd figure 8 fwd typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ce = 200 v v ce = 200 v v ge = 15 v v ge = 15 v r gon = 8,0 ? i c = 20 a high side high side igbt and low side fwd e rec high t e rec low t 0 0,2 0,4 0,6 0,8 0 1 02 03 04 0 i c (a) e (mws) e rec high t e rec low t 0 0,2 0,4 0,6 0,8 0 1 02 03 04 0 r g ( ) e (mws) e off high t e on high t e on low t e off low t 0 0,3 0,6 0,9 1,2 1,5 1,8 0 1 02 03 04 0 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 0,3 0,6 0,9 1,2 1,5 1,8 0 1 02 03 04 0 r g ( ) e (mws) 15 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 9 igbt figure 10 igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ce = 200 v v ce = 200 v v ge = 15 v v ge = 15 v r gon = 8,0 ? i c = 20 a r goff = 8,0 ? figure 11 fwd figure 12 fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 200 v v r = 200 v v ge = 15 v i f = 20 a r gon = 8,0 ? v ge = 15 v high side high side igbt and low side fwd t doff t f t don t r 0,001 0,01 0,1 1 0 10203040 i c (a) t ( s) t doff t f t r t don 0,001 0,01 0,1 1 0 10203040 r g ( ) t ( s) t rr high t t rr low t 0 0,1 0,2 0,3 0,4 0 1 02 03 04 0 r gon ( ? ) t rr (ms) t rr high t t rr low t 0,00 0,05 0,10 0,15 0,20 0,25 01 02 03 04 0 i c (a) t rr (ms) 16 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 13 fwd figure 14 fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c t j = 25/125 c v ce = 200 v v r = 200 v v ge = 15 v i f = 20 a r gon = 8,0 ? v ge = 15 v figure 15 fwd figure 16 fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 200 v v r = 200 v v ge = 15 v i f = 20 a r gon = 8,0 ? v ge = 15 v high side igbt and low side fwd high side i rrm high t i rrm low t 0 20 40 60 80 0 10203040 r gon ( ? ) i rrm (a) q rr high t q rr low t 0 0,5 1 1,5 2 0 10203040 r gon ( ) q rr (mc) i rrm high t i rrm low t 0 10 20 30 40 0 10203040 i c (a) i rrm (a) q rr high t q rr low t 0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 1 02 03 04 0 i c (a) q rr (mc) 17 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 17 fwd figure 18 fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 200 v v r = 200 v v ge = 15 v i f = 20 a r gon = 8,0 ? v ge = 15 v figure 19 igbt figure 20 fwd igbt transient thermal impedance f wd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = tp / t d = tp / t r thjh = 1,08 k/w r thjh = 2,37 k/w igbt thermal model values fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,05 3,76 0,05 8,95 0,09 1,04 0,14 1,10 0,32 0,25 0,69 0,20 0,38 0,09 0,57 0,06 0,20 0,01 0,62 0,01 high side igbt and low side fwd high side t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt t di rec /dt t 0 4000 8000 12000 16000 20000 010203040 r gon ( ? ) di rec / dt (a/ms) di rec /dt t di o /dt t 0 1000 2000 3000 4000 5000 6000 0 10203040 i c (a) di rec / dt (a/ms) 18 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 21 igbt figure 22 igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 oc t j = 175 oc v ge = 15 v figure 23 fwd figure 24 fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc high side high side igbt and low side fwd 0 30 60 90 120 150 180 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 t h ( o c) i c (a) 0 20 40 60 80 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 0 50 100 150 200 th ( o c) i f (a) 19 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 25 igbt reverse bias safe operating area i c = f(v ce ) at t j =t jmax -25 oc u ccminus =u ccplus switching mode : 3 level switching high side high side igbt 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 v ce (v) i c (a) i c max v ce max i c module ic chip 20 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 25 high side inverse diode figure 26 high side inverse diode typical fwd forward current as fwd transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at at t p = 250 s d = tp / t r thjh = 2,54 k/w figure 27 high side inverse diode figure 28 high side inverse diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc high side inverse diode 0 10 20 30 40 50 00,511,522,533,5 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 0 50 100 150 200 th ( o c) p tot (w) 0 5 10 15 20 25 30 0 50 100 150 200 th ( o c) i f (a) 21 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 1 fast rectifier fwd figure 2 fast rectifier fwd typical thyristor forward current as th yristor transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f ) z thjh = f(t p ) at at t p = 250 sd = t p / t r thjh = 1,60 k/w figure 3 fast rectifier fwd figure 4 fast rectifier fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc fast rectifier fwd 0 50 100 150 200 250 01234 v f (v) i f (a) t j = 25c t j = t jmax - 25c 0 20 40 60 80 100 120 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 0 50 100 150 200 t h ( o c) i f (a) t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 0 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 22 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) r/ ? 23 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet t j 125 c r g on 8 ? r goff 8 ? figure 1 low side mosfet figure 2 low side mosfet turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = 0v v ge (0%) = 0v v ge (100%) = 10 v v ge (100%) = 10 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 20 a i c (100%) = 20 a t doff = 0,21 s t don = 0,03 s t eoff = 0,24 s t eon = 0,07 s figure 3 low side mosfet figure 4 low side mosfet turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 20 a i c (100%) = 20 a t f = 0,00 s t r = 0,01 s switching definitions low side mosfet general conditions = = = i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,1 0 0,1 0,2 0,3 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce5% -50 0 50 100 150 200 250 300 3,95 4 4,05 4,1 4,15 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,14 0,15 0,16 0,17 0,18 0,19 0,2 time (us) % v ce i c t f i c10% i c90% -50 0 50 100 150 200 250 300 4 4,02 4,04 4,06 4,08 time(us) % t r v ce i c 24 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 5 low side mosfet figure 6 low side mosfet turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 7,99 kw p on (100%) = 7,99 kw e off (100%) = 0,07 mj e on (100%) = 0,41 mj t eoff = 0,24 s t eon = 0,07 s figure 7 low side mosfet figure 8 low side fwd gate voltage vs gate charge (measured) turn -off switching waveforms & definition of t r r v d (100%) = 400 v i d (100%) = 20 a i rrm (100%) = -34 a t rr = 0,03 s switching definitions low side mosfet i c 1% v g e90% -25 0 25 50 75 100 125 -0,05 0 0,05 0,1 0,15 0,2 0,25 time (us) % p off e off t eoff v ce 3% v ge 10% -50 0 50 100 150 200 250 3,9 3,95 4 4,05 4,1 4,15 time(us) % p on e on t eon i rrm 10% i rrm 90% i rrm 100% t rr -200 -150 -100 -50 0 50 100 150 4 4,02 4,04 4,06 4,08 4,1 time(us) % i d v d fitted -2 0 2 4 6 8 10 12 -25 0 25 50 75 100 125 150 q g (nc) u ge (v) 25 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 9 low side fwd figure 10 low side fwd turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 20 a p rec (100%) = 7,99 kw q rr (100%) = 0,68 c e rec (100%) = 0,08 mj t qrr = 0,07 s t erec = 0,07 s figure 11 low side mosfet switchi ng measurement circuit switching definitions low side mosfet 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 1 0 1 2 4 3 2 1 0 1 5 2 0 1 2 0 3 0 t qrr -200 -150 -100 -50 0 50 100 150 4 4,03 4,06 4,09 4,12 time(us) % i d q rr -150 -100 -50 0 50 100 150 4 4,03 4,06 4,09 4,12 time(us) % p rec e rec t erec 26 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet t j 125 c r g on 8 ? r goff 8 ? figure 1 high side igbt figure 2 high side igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 20 a i c (100%) = 20 a t doff = 0,10 s t don = 0,09 s t eoff = 0,17 s t eon = 0,12 s figure 3 high side igbt figure 4 high side igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 20 a i c (100%) = 20 a t f = 0,080 s t r = 0,011 s switching definitions high side igbt general conditions = = = i c10% v ge10% t don v ce 3% -50 0 50 100 150 200 250 3,8 3,95 4,1 4,25 4,4 time(us) % i c v ce t eon v ge i c 1% v ce 90% v ge 90% -25 0 25 50 75 100 125 -0,4 -0,2 0 0,2 0,4 0,6 0,8 time (us) % t doff t eof f v ce i c v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,00 0,05 0,10 0,15 0,20 0,25 0,30 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,95 4 4,05 4,1 4,15 time(us) % t r v ce i c 27 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 5 high side igbt figure 6 high side igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 7,96 kw p on (100%) = 7,9608 kw e off (100%) = 1,48 mj e on (100%) = 0,38 mj t eoff = 0,17 s t eon = 0,12 s figure 7 high side igbt figure 8 low side fwd gate voltage vs gate charge (measured) turn -off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 400 v v geon = 15 v i d (100%) = 20 a v c (100%) = 400 v i rrm (100%) = -29 a i c (100%) = 20 a t rr = 0,04 s q g = 3441,54 nc switching definitions high side igbt i c 1% u ge 90% -20 10 40 70 100 130 -0,3 -0,15 0 0,15 0,3 0,45 0,6 0,75 time (us) % p off e off t eoff u ce 3% u ge10% -20 10 40 70 100 130 3,8 3,88 3,96 4,04 4,12 4,2 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -200 0 200 400 600 800 q g (nc) u ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3,9 4 4,1 4,2 4,3 time(us) % i d u d fitte d 28 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet figure 9 low side fwd figure 10 low side fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr )( t erec = integrating time for e rec ) i d (100%) = 20 a p rec (100%) = 7,96 kw q rr (100%) = 1,54 c e rec (100%) = 0,18 mj t qint = 0,09 s t erec = 0,09 s figure 11 switching definitions high side igbt high side igbt switching measurement circuit t qint -150 -100 -50 0 50 100 150 3,8 4 4,2 4,4 4,6 time(us) % i d q rr -25 0 25 50 75 100 125 3,8 4 4,2 4,4 4,6 time(us) % p rec e rec t erec 29 rev ision: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet version ordering code in datamatrix as in packaging barcode as without thermal paste 12mm housing 10-FY06RIA080MF-M537D68 m537d68 m537d68 pins 3 and 6 are not connected. pinout ordering code and marking - outline - pinout ordering code & marking outline 30 revi sion: 1 copyright by vincotech
10-FY06RIA080MF-M537D68 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. 31 revis ion: 1 copyright by vincotech

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