s mhop microelectronics c orp. a features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor www.samhop.com.tw jan,08,2014 1 details are subject to change without notice. sot23 g s d STS3116E ver 1.1 green product symbol v ds v gs i dm w a p d c 1.25 -55 to 150 i d units parameter 30 2.6 9 v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics absolute maximum ratings ( t a =25 c unless otherwise noted ) drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg 100 thermal resistance, junction-to-ambient r ja a t a =25 c limit t a =70 c a 2.1 0.8 w t a =70 c c/w product summary v dss i d r ds(on) (m ) max 30v 2.6a 107 @ vgs=4.5v 94 @ vgs=10v 139 @ vgs=2.5v esd protected. s g d
STS3116E www.samhop.com.tw jan,08,2014 2 v gs = 12v , v ds =0v v gs =0v,i s = 1a 0.82 30 1 10 0.5 6.5 396 56 33 46 77 413 48 3.8 0.6 1.3 v ds =15v,v gs =0v v dd =15v i d =1a v gs =10v r gen = 6 ohm v ds =5v , i d =1.3a v ds =24v , v gs =0v v gs =0v , i d =250ua 0.9 1.5 symbol min typ max units bv dss v i gss ua v gs(th) v g fs s v sd c iss pf c oss pf c rss pf q g nc nc q gs nc q gd t d(on) ns t r ns t d(off) ns t f ns gate-drain charge switching characteristics gate-source charge total gate charge rise time turn-off delay time v ds =15v,i d =1.3a,v gs =10v fall time turn-on delay time input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage i dss ua gate threshold voltage zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage reverse transfer capacitance on characteristics c c v ds =15v,i d =1.3a, v gs =10v drain-source diode characteristics 1.2 v notes _ _ _ b a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. f=1.0mhz v ds =v gs , i d =250ua ver 1.1 103 v gs =2.5v , i d =1a 139 m ohm 75 v gs =10v , i d =1.3a 94 m ohm 82 v gs =4.5v , i d =1.2a 107 m ohm r ds(on) drain-source on-state resistance
www.samhop.com.tw jan,08,2014 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation tj, junction temperature( c ) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature STS3116E ver 1.1 9.0 7.2 5.4 3.6 1.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 vgs= 1.5v vgs =2v vgs=10v 10 8 6 4 2 0 0 0.6 3.6 3.0 2.4 1.8 1.2 -55 c 25 c tj=125 c 240 200 160 120 80 40 1 1 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =4.5v i d =1.2a v gs =2.5v i d =1a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 1.20 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs =10v i d =1.3a v gs =2.5v vgs=4.5v vgs=3v vgs =2.5v 9.0 7.2 5.4 3.6 1.8
www.samhop.com.tw jan,08,2014 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area gate-source voltage variation with source current r ds ( o n ) lim it 0 STS3116E ver 1.1 crss coss ciss 500 400 300 200 100 10 15 20 25 30 0 5 110 100 10 100 1000 5000 300 250 200 150 100 50 0 68 10 0 4 2 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 25 c 125 c 75 c 10 8 6 4 2 0 v ds =15v i d =1.3a v gs =10v single pulse t a =25 c 10ms 1ms 10 0 u s dc 1 0s 100 m s vds=15v,id=1a vgs=10v td(on) tr td(off ) 125 c i d =1.3a 25 c 75 c 3 24 1 0 30 10 1 0.1 0.1 150 30 10 tf
www.samhop.com.tw jan,08,2014 5 STS3116E ver 1.1 0.01 0. 1 1 10 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 norm aliz ed transien t therma l r esis tance single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve
www.samhop.com.tw jan,08,2014 6 STS3116E ver 1.1 package outline dimensions sot 23 d e e1 e e1 b 1 2 3 l detail "a" millimeters inches symbols d e 2.700 3.100 2.200 3.000 e1 1.200 1.700 e e1 b 0.300 0.510 c 0.080 0.200 a a1 a a1 0.000 0.150 0.887 1.300 l1 l l1 0.600 ref. 0 o 10 o 0.106 0.122 0.087 0.118 0.047 0.067 0.019 0.020 0.003 0.008 0.000 0.006 0.035 0.051 0.024 ref. 0 o 10 o min max min max 0.850 1.150 0.033 0.045 1.800 2.100 0.071 0.083 0.450 ref. 0.018 ref. detail "a"
www.samhop.com.tw jan,08,2014 7 STS3116E ver 1.1 sot23 tape and reel data sot23-3l carrier tape sot23-3l reel 3.15 2 0.10 2.77 2 0.10 1.22 2 0.10 1.00 +0.05 1.50 +0.10 8.00 +0.30 -0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.22 2 0.04 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot23-3l a0 b0 k0 d0 d1 e e1e2p0 p1p2 t tr feed direction
8 sot-23 xx STS3116E ver 1.1 www.samhop.com.tw jan,08,2014 t6e product no. production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) top marking definition
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