Part Number Hot Search : 
16235SLM 3032SC F0305 2620QK1 ATMEG 9250B 55340 AMH45P
Product Description
Full Text Search
 

To Download TSM4424CSRVG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  tsm442 4 20v n - channel mosfet 1 / 6 version: c 1 4 sop - 8 key parameter performance parameter value unit v ds 20 v r ds(on) (max) 30 m q g 11.2 nc features advance trench process technology high density cell design for ultra low on - resistance block diagram application spec ially designed for li - on battery packs battery switch application ordering information part no. package packing tsm442 4 cs rl sop - 8 2.5kpcs / 13 reel tsm4424cs rlg sop - 8 2.5kpcs / 13 reel tsm4424cs rvg sop - 8 3 kpcs / 13 reel note: g denotes for h alogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds absolute maximum rating s ( t c = 25 c , unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 8 v continuous drain current i d 8 a pulsed drain current (note 1) i dm 30 a continuous source current (diode conduction) i s 2.2 a maximum power dissipation ta = 25 c p d 2.5 w ta = 75 c 1.3 operating junction temperature t j +150 c operating junction and storage temperature range t j , t stg - 55 to +150 c thermal performance parameter symbol limit unit thermal resistance junction to foot r ? j f 25 c/w thermal resistance junction to ambient r ? ja 52.5 c/w n - channel mosfet pin definition : 1. source 8 . drain 2. source 7. drain 3. source 6. drain 4. gate 5. drain
tsm442 4 20v n - channel mosfet 2 / 6 version: c 1 4 electrical specifications parameter conditions symbol min typ max u nit static (note 2 ) drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) -- 0.65 1 v gate body leakage v gs = 8 v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 20v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds =5v, v gs = 4.5v i d(on) 30 -- -- a drain - source on - state resistance v gs = 4.5v, i d = 4 .5 a r ds(on) -- 23 30 m ? v gs = 2.5v, i d = 3.5a -- 2 5 35 v gs = 1.8v, i d = 2.0a -- 3 5 45 forward transconductance v ds = 10v, i d = 6a g fs -- 4 0 -- s diode forward voltage i s = 1.7a, v gs = 0v v sd -- 0. 8 1.2 v dynamic (note 3 ) total gate charge v ds = 10v, i d = 4.5 a, v gs = 4.5v q g -- 11 .2 14 nc gate - source charge q gs -- 1. 4 -- gate - drain charge q gd -- 2. 2 -- input capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c iss -- 500 -- pf output capacitance c oss -- 300 -- reverse transfer capacitance c rss -- 140 -- swit ching (note 4 ) turn - on delay time v dd = 10v, r l = 10 ? , i d = 1a, v gen = 4.5v, r g = 6 ? t d(on) -- 15 25 n s turn - on rise time t r -- 30 60 turn - off delay time t d(off) -- 35 70 turn - off fall time t f -- 15 45 notes: 1. pulse width limited by the m aximum junction temperature 2. p ulse test: pw "d 300s , d u ty cy cle "d 2% 3. for design aid only, not subject to production testing. 4. switching time is essentially independent of operating temperature.
tsm442 4 20v n - channel mosfet 3 / 6 version: c 1 4 e lectrical characteristics curve output characteristics transfer characteristics on - resistance vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm442 4 20v n - channel mosfet 4 / 6 version: c 1 4 e lectrical characteristics curve on - resistance vs. gate - source voltage threshold voltage safety operation area normalized thermal tra nsient impedance, junction - to - ambient
tsm442 4 20v n - channel mosfet 5 / 6 version: c 1 4 sop - 8 mechanical drawing unit: millimeters marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm442 4 20v n - channel mosfet 6 / 6 version: c 1 4 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained he rein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc  s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemnify tsc for any damages resulting from such improper use or sale.


▲Up To Search▲   

 
Price & Availability of TSM4424CSRVG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X