c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 www. ruichips .com ru 4023 1 q2 n - channel a dvanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 40 v v gss gate - source voltage 2 0 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 23 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 92 0 a i d continuous drain current ( v gs =10v) t c =25 c 23 0 a t c =100 c 164 p d maximum power dissipation t c =25 c 3 94 w t c = 100 c 1 97 w r q jc thermal resistance - junction to c ase 0. 38 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 5 7 6 m j ? 40 v/ 23 0 a, r ds ( on ) = 2.3 m ( t y p .)@ v gs =10v r ds ( on ) = 3.5 m ( t y p .)@ v gs = 4.5 v ? super high dense cell design ? ultra low on - resistance ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? dc - dc converters and off - line ups ? switching applications absolute maximum ratings n - channel mosfe t to - 3p
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 2 www. ruichips .com ru 4023 1 q2 electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 4023 1 q2 unit min. typ. max. static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 40 v i dss zero gate voltage drain current v ds = 40 v, v gs =0v 1 m a t j =85 c 3 0 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1 - 3 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 75 a 2.3 3 m w v gs = 4.5 v, i ds = 50 a 3.5 5 m w notes : calculated continuous current based on maximum allowable junction temperature . the package limitation current is 90 a. pulse width limited by safe operating area. limited by t jmax , i as = 4 8 a, v d d = 32 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 7 5 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 7 5 a, dl sd /dt=100a/ m s 56 ns q rr reverse recovery cha rge 102 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 5 w c iss input capacitance v gs =0v, v ds = 20 v, frequency=1.0mhz 49 0 0 pf c oss output capacitance 1 0 3 0 c rss reverse transfer capacitance 2 2 0 t d ( on ) turn - on delay time v dd = 20 v, r l = 0.3 w , i ds = 7 5 a, v gen =10v, r g = 2.5 w 20 ns t r turn - on rise time 9 8 t d ( off ) turn - off delay time 105 t f turn - off fall time 52 gate charge characteristics q g total gate charge v ds = 3 2 v, v gs =10v, i ds = 7 5 a 9 0 nc q gs gate - sourc e charge 26 q gd gate - drain charge 3 0
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 3 www. ruichips .com ru 4023 1 q2 typical characteristics power dissipation drain current p tot - power ( w) i d - d rain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 4 www. ruichips .com ru 4023 1 q2 typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 5 www. ruichips .com ru 4023 1 q2 typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junctio n temperature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 6 www. ruichips .com ru 4023 1 q2 avalanche test circu it and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 7 www. ruichips .com ru 4023 1 q2 ordering and marking information device marking package packaging quantity reel size tape width ru 4023 1 q2 ru 4023 1 q2 to - 3p tube 3 0 - -
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 8 www. ruichips .com ru 4023 1 q2 package information to3p package outline symbol mm inch symbol mm inch min nom max min nom max min nom max min nom max a 4.60 4.80 5.00 0.181 0.189 0.197 h 0.05 0.10 0.15 0.002 0.004 0.006 a1 1.40 1.50 1.60 0.055 0.059 0.063 l 7.40 typ 0.291 typ a2 1.33 1.38 1.43 0.052 0.054 0.056 l1 9.00 typ 0.354 typ b 0.80 1.00 1.20 0.031 0.039 0.047 l2 11.00 typ 0.433 typ b1 2.80 3.00 3.20 0.110 0.118 0.126 l3 1.00 ref 0.039 ref b2 1.80 2.00 2.20 0.071 0.079 0.08 7 ?p 6.90 7.00 7.10 0.272 0.276 0.280 c 0.50 0.60 0.70 0.020 0.024 0.028 ?p1 3.20 ref 0.126 ref d 19.75 19.90 20.05 0.778 0.783 0.789 ?p 2 3.50 ref 0.138 ref d1 13.70 13.90 14.10 0.539 0.547 0.555 ?p 3 1.40 1.50 1.60 0.055 0.059 0.063 d2 12.90 ref 0.508 ref r 0.50 ref 0.020 ref e 15.40 15.60 15.80 0.606 0.614 0.622 q 5.00 ref 0.197 ref e1 13.40 13.60 13.80 0.528 0.535 0.543 q1 12.56 12.76 12.96 0.494 0.502 0.510 e2 9.40 9.60 9.80 0.370 0.378 0.386 u 7.80 8.00 8.20 0.307 0.315 0.323 e 5.45 typ 0 .215 typ 1 5 7 9 5 7 9 g 4.60 4.80 5.00 0.181 0.189 0.197 2 1 3 5 1 3 5 h 40.30 40.50 40.70 1.587 1.594 1.602 3 60 ref 60 ref h1 23.20 23.40 23.60 0.913 0.921 0.929
c opyright ruichips semiconductor co . , ltd rev . a C oct ., 201 2 9 www. ruichips .com ru 4023 1 q2 customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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