QS5U36 transistors 1/5 1.5v drive nch+sbd mosfet QS5U36 z structure silicon n-channel mosfet schottky barrier diode z features 1) the QS5U36 combines nch mosfet with a schottky barrier diode in a single tsmt5 package. 2) low on-state resistance with fast switching. 3) low voltage drive (1.5v). 4) the independently connected schottky barrier diode has low forward voltage. z applications switching z packaging specifications package code taping basic ordering unit (pieces) QS5U36 tr 3000 type z dimension s (unit : mm) each lead has same dimensions tsmt5 abbreviated symbol : u36 z equivalent circuit (1)gate (2)source (3)anode (4)cathode (5)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (5) (3) (4)
QS5U36 transistors 2/5 z absolute maximum ratings (ta=25 c) v rm v r i f i fsm tj parameter v v dss symbol 20 v v gss 10 a i d 2.5 a i dp 5.0 a i s 0.7 a i sp 5.0 v 20 a 0.7 a 3.0 c 150 c tch 150 v 25 limits unit channel temperature w/element p d 0.9 power dissipation w / total p d 1.25 c tstg ? 55 to +150 total power dissipation range of storage temperature drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed source current (body diode) repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature ? 1 ? 1 ? 3 ? 2 w/element p d 0.7 power dissipation ? 3 ? 3 ? 1 pw 10 s, duty cycle 1% ? 2 60hz 1cyc. ? 3 mounted on a ceramic board z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 a v gs = 10v / v ds = 0v v dd 10v typ. max. unit conditions v (br) dss 20 ?? v i d = 1ma, / v gs = 0v i dss ?? 1 a v ds = 20v / v gs = 0v v gs (th) 0.3 ? 1.3 v v ds = 10v / i d = 1ma ? 58 81 i d = 2.5a, v gs = 4.5v r ds (on) ? 74 104 m ? m ? m ? i d = 2.5a, v gs = 2.5v ? 120 240 i d = 0.5a, v gs = 1.5v 2.7 ?? s v ds = 10v, i d = 2.5a c iss ? 280 ? pf v ds = 10v c oss ? 65 35 ? pf v gs = 0v c rss ? 6 ? pf f = 1mhz t d (on) ? 15 ? ns t r ? 30 ? ns t d (off) ? 15 ? ns t f ? 3.5 ? ns q g ? 0.8 ? nc q gs ? 0.7 ? nc v gs = 4.5v q gd ?? nc i d = 2.5a, ? 95 133 m ? i d = 1.3a, v gs = 1.8v ? pulsed ? ? ? ? ? ? ? ? ? v dd 10 v i d = 1.3a v gs = 4.5v r l 7.7 ? r l 4 ? , r g = 10 ? r g = 10 ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge body diode (source-drain) v sd ?? 1.2 v i s = 0.7a / v gs = 0v forward voltage ? pulsed ? i r ?? 200 av r = 20v reverse current v f ?? 0.49 v i f = 0.7a forward voltage
QS5U36 transistors 3/5 z electrical characteristic curves drain-source voltage : v ds (v) 0.01 10 100 1000 1 0.1 10 100 capacitance : c (pf) fig.1 typical capacitance vs. drain-source voltage ta=25 c f=1mhz v gs =0v ciss coss crss drain current : i d (a) 0.01 1 10 100 1000 0.1 1 10 switching time : t (ns) fig.2 switching characteristics ta=25 c v dd =10v v gs =4.5v r g =10 ? pulsed tf td(on) tr td(off) total gate charge : qg (nc) 0 0 1 2 3 4 6 5 12345 gate-source voltage : v gs (v) fig.3 dynamic input characteristics ta=25 c v dd =10v i d =2.5a r g =10 ? pulsed gate-source voltage : v gs (v) 0.01 0.1 1 10 0.5 1.0 1.5 drain current : i d (a) fig.4 typical transfer characteristics v ds =10v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c gate-source voltage : v gs (v) 01 0 75 50 25 100 125 23 10 45 6789 static drain-source on-state resistance : r ds(on) (m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta=25 c pulsed i d =2.5a i d =1.3a source-drain voltage : v sd (v) 0.0 0.01 0.1 1 10 0.5 1.0 1.5 source current : i s (a) fig.6 source current vs. source-drain voltage v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c drain current : i d (a) 0.01 0.1 10 100 1000 110 static drain-source on-state resistance : r ds (on) (m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta=25 c pulsed v gs =1.5v v gs =1.8v v gs =2.5v v gs =4.5v drain current : i d (a) 0.01 0.1 10 100 1000 110 fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs =1.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) 0.01 0.1 10 100 1000 110 fig.9 static drain-source on-state resistance vs. drain current ( ?? ) v gs =1.8v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c static drain-source on-state resistance : r ds (on) (m ? )
QS5U36 transistors 4/5 drain current : i d (a) 0.01 0.1 10 100 1000 110 fig.10 static drain-source on-state resistance vs. drain current ( ) v gs =2.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c static drain-source on-state resistance : r ds (on) (m ? ) drain current : i d (a) 0.01 0.1 10 100 1000 110 fig.11 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125 c ta=75 c ta=25 c ta= ? 25 c static drain-source on-state resistance : r ds (on) (m ? ) drain current : ? i d (a) 0.01 0.1 0.1 1 10 110 forward transfer admittance yfs (s) fig.12 forward transfer admittance vs. drain current v ds =10v pulsed ta= ? 25 c ta=25 c ta=75 c ta=125 c z notice 1. sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 0.01 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 reverse voltage : vr [v] reverse current : ir [ua] pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.13 reverse current vs. reverse voltage 0.001 0.01 0.1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 pulsed ta= - 25 ta = 25 ta = 125 ta = 75 forw ard voltage : v f (v) forward current : i f (a) fig.14 forward current vs. forward voltage
QS5U36 transistors 5/5 z measurement circuit fig.15 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.16 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t f t d(off) fig.17 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.18 gate charge waveform v g v gs charge q g q gs q gd
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / europe / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2008 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21 saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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