, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irff9130, irff9131 IRFF9132, irff9133 avalanche-energy-rated p-channel power mosfets -5.5a and -6.5a, -60v and -100v ros (on) = 0.30o and 0.40o features: ? single pulse avalanche energy rated ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance the irff9130, irff9131, IRFF9132 and irff9133 are ad- vanced power mosfets designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. these are p-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the irff-types are supplied in the jedec to-205af (low-profile to-39) metal package. terminal diagram d ?2cs-432?? p-channei. enhancement mode terminal designation jedec to-205af absolute maximum ratings parameter vps drain - source voltage (t) vqgr drain - gate voltage (rfjs = 20 kd) ? 'd @ tc = 25c continuous drain current loud pulsed drain current (d vqs gate - source voltage pd @ tc " 25c max. power dissipation linear derating factor t... single pulse avalanche energy ? tj operating junction and tsly storage temperature range lead temperature ihff9130 -100 100 -6.5 26 irff9131 60 -60 -6.5 -26 IRFF9132 -100 100 5.5 22 irff9133 -60 60 -5.5 22 20 25 (see fig. 141 02 (see fig. 14! 500 55 to 150 300 (0.063 in. (1 .6mm) from case for 10s! un.ls v v a a v w w/c mj c ?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. \ semi-conductors encourages customers to verify that datasheets are current before placing orders.
irff9130, irff9131, IRFF9132, irff9133 electrical characteristics @tq = 25c (unless otherwise specified) parameter bvdss drain - source breakdown voltage vgs(th) ^ate threshold voltage ?css gate source leakage forward 'css gate ~ source leakage reverse 'oss zero ^ate voltage dram current !d(on) on-state dram current ? rds(on) static drain - source on-state resistance @ 9fs forward transconductance <^) ciss input capacitance cqss output capacitance cfss reverse transfer capacitance td(on) turn-on delay time t r rise time tdtoffl turn-off delay time tf fall time og total gate charge (gate- source plus gate-drain) qgs gate-source charge gwj gate-drain {"miller") charge lq internal drain inductance ls internal source inductance type irff9130 IRFF9132 irff9131 irff9133 all all all irff9130 ihff9131 IRFF9132 irff9133 irff9130 irff9131 IRFF9132 irff9133 all all all all all all all all all all all all all mm 100 -60 2.0 -6.s -5.5 - 2.5 - - typ. - - - 0.25 0.30 3.5 500 300 10o 30 70 70 70 25 13 12 50 15 max - - 40 -100 100 -250 1000 - - 0.30 0.40 - ? 60 140 140 140 45 23 22 units v v v na na fa *a a a n 0 s pf pf pf ns ns ns ns nc nc nc nh nh test conditions vgs * ov lo - -250,-a vds :- vgs .'d - -2so..a vgs -- 2v vgs -. 20v vds ; max. rating. vgs ov vds max. rating x 0.8. vgs ov, tc 125c vds > 'olonl * rds[on) max - vgs ~ ' 10v vgs 'v- 'd vos > 'dion) * rds(on) max IRFF9132 irff9133 irff9130 irff9131 IRFF9132 irff9133 irff9130 irff9131 IRFF9132 1rff9133 all all all - - - - - - - - - 300 18 65 -5.5 -26 -22 -1 5 -1 5 - - a a a a v v ns *c modified mosfet symbol showing the integral i reverse p-n junction rectifier. (ft* oo-l^-u < l 1 ) tc = 25c, ls j 6.5a. vgs = ov tc - 25c. is = -5 5a. vgs = ov tj * 150c 1f = 6.5a. dlf/dt = 10oa/ms tj . 150c.lp 65a,dlf/dt = looa/^s intrinsic turn-on time is negligible turn on speed is substantially controlled by ls + lp. o tj = 25cto 150"c. <2 pulse test: pulse width s soo^is, duty cycle < 2%, (s repetitive rating: pulse width limited by max junction temperature. see transient thermal impedance curve (fig. 5). ? voo = 25v. starting tj = 25c. l 17.75 mh, rg = 25o. peak il ? 6.5a. (see fig 15 and 16)
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