chm2179b98f ref. : dschm2179b98f3246 - 03 sep 13 1 / 8 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 w - band mixer gaas monolithic microwave ic description the chm2179b98f is a monolithic single channel mixer, which integrates high quality schottky diodes that produces low conversion loss and very low 1/f noise. the circuit is designed for sensors system at w - band, such as automotive long range radar and industrial sensors. the circuit is manufactured with a schottky diode mmic process, 1m gate l ength, via holes through the substrate, air bridges and stepper lithography. it is available in chip form. main features main electrical characteristics tamb.= +25c symbol parameter min typ max unit f_lo, f_rf lo, rf frequency 76 79 ghz f_if if frequency range [dc;100] mhz lc conversion loss 8 db l_lo/rf lo/rf isolation 22 db n_if if noise @ 100khz - 162 dbm/hz rf if lo
chm2179b98f w - band mixer ref. : dschm2179b98f3246 - 03 sep 13 2 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 9114 0 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c. symbol parameter min typ max unit f_lo, f_rf lo, rf frequency 76 79 ghz f_if if frequency range [dc;100] mhz lc conversion loss 8 db p_lo lo input power 3 5 8 dbm p_rf_1db rf input power at 1 db - 3 0 dbm vswr_lo lo port vswr (50 ? (1) 2:1 2.5:1 vswr_rf rf port vswr (50 ? (1) 2:1 2.5:1 imp_if if load impedance (2) 200 ? (3) 35 db noise figure for if=10khz (3) 29 db noise figure for if=100khz (3) 21.5 db noise figure for if=200khz (3) 18 db +v positive supply voltage (4) 4.5 v +i positive supply current (4) 1 2.5 ma top operating temperature range - 40 +100 c (1) an external matching network is required (see section recommended assembly plan) (2) the if optimum load for conversion loss is 200?. for minimum noise figure this load can be lower, the best results have been obtained on 50?. (3) measured on 200? if impedance. (4) an external resistor controls the bias current (see section typical bi configuration) absolute maximum ratings (1) tamb.= +25c symbol parameter values unit +i supply current (2) 2.5 ma p_lo maximum peak input power overdrive at lo port (3) 9 dbm p_rf_cw maximum input power at rf port (4) 3 dbm tj junction temperature 175 c top operating temperature range - 40 to +100 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) an external resistor controls the bias current (see section typical bias and if configuration). (3) duration < 1s. (4) continuous wave mode.
w - band mixer chm2179b98f ref. : dschm2179b98f3246 - 03 sep 13 3 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical conversion gain measured on 200? if load conversion gain versus lo frequency typical if noise power measured on 50? if load if noise power versus if frequency - 20 - 19 - 18 - 17 - 16 - 15 - 14 - 13 - 12 - 11 - 10 - 9 - 8 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 75 75,5 76 76,5 77 77,5 78 78,5 79 79,5 80 conversion gain (db) lo frequency (ghz)
chm2179b98f w - band mixer ref. : dschm2179b98f3246 - 03 sep 13 4 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 9114 0 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 100m. chip size: 1530x1170 35m hf pads (2,5) = 105 x 86 (bcb opening) dc/if pads = 86 x 83 (bcb opening) all dimensions are in micrometers pin number pin name description 1,3,4,6 on chip ground: not connected (1) 2 lo lo input 5 rf rf input 7 gnd ground (optional) 8 not c onnected 9 if if output 10 c_ext bias decoupling 11 +v positive supply voltage (1) if required, please ask for more information. 1 2 3 4 5 6 7 8 9 11 10
w - band mixer chm2179b98f ref. : dschm2179b98f3246 - 03 sep 13 5 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical bias and if configuration several external configurations are possible for bias and if. the objective is to give flexibility for the integration. as this component is mainly dedicated to low if use, there are several possibilities for interfacing with low noise if amplifier. the optimum if load for conversion loss is 200 ? , only the c_ext port can recommended external bias and if configuration oth er possible configuration (compatible with the previous version) the recommended values for external components are: c_bias r_bias x c >> 1/f_if r_bias1 2.9k ? ? ? (1) r_bias = r_bias1 + 1k ? when +v port is used, otherwise r_bias = r_bias2 different from recommended ones (supply voltage, lo power ). however maximum ratings (2) a series capacitor at if outputs is recommended for dc decoupling. rf lo +v 1k if +v c_ext r_bias1 r_load_if c_if c_bias rf lo +v 1k if +v c_ext r_bias2 r_load_if c_if c_bias
chm2179b98f w - band mixer ref. : dschm2179b98f3246 - 03 sep 13 6 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 9114 0 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan in order to use acceptable wire bonding length, compatible with automatic pick and place and wire bonding equipment, an external matching network is proposed on low dielectric constant substrate for 76 - 77ghz band. example of integration using low dielectric constant substrate ( er=3, thickness=127 m ) all dimensions are in micrometers
w - band mixer chm2179b98f ref. : dschm2179b98f3246 - 03 sep 13 7 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 rf and lo ports impedance for use at frequency band outside 76 to 77ghz range, and for custom assembly configuration, the typical rf and lo ports impedance versus frequency are given below in the bond pad centre plan. this can be used to design external matching network for compensation of wire bonding.
chm2179b98f w - band mixer ref. : dschm2179b98f3246 - 03 sep 13 8 / 8 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 9114 0 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data a re available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form: chm2179b98f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorized for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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