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  zxmp10a13f document num ber: ds33596 rev. 4 - 2 1 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f 100v p - channel enhancement mode mosfet product summary b v dss max r ds(on) package max i d t a = +25 c note 5 - 100v 1.0 ? @ v gs = - 10v sot23 - 0.7a 1.45 ? @ v gs = - 6 .0 v - 0.5a description this mosfet utilizes a unique structure that combines the benefits of low on - resistance with fast switching speed, making it ideal for high - efficiency power management applications. applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control features ? fast switching s p eed ? low input c apacitance ? low g ate c harge ? low t hreshold ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? ca se: sot - 23 ? case material: molded plastic, ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: matte tin finish a nnealed over copper l eadframe solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( a ppr oximate) ordering information (note s 4 & 5 ) part number compliance case quantity per reel zxmp10a13fta standard sot 23 3 ,000 zxmp10a13f q t a automotive sot 23 3 ,000 zxmp10a13ft c standard sot 23 10 ,000 zxmp10a13f q t c automotive sot 23 10 ,00 0 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "gr een" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified a nd are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ . 5 . for packaging details, go t o our website at http : //www.diodes.com/products/packages.html . marking information top view equivalent circuit top view pin out sot - 23 7p1 = product type marking code 7p1 sot - 23 d s g d s g e3
zxmp10a13f document num ber: ds33596 rev. 4 - 2 2 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 100 v gate - source voltage v gs 2 0 v continuous drain current v gs = 10v (note 6) t a = +70c (note 6) (note 6 ) i d - 0.7 - 0.5 - 0.6 a pulsed drain current (note 8 ) i dm - 3.1 a continuous source current (body diode) (note 6) i s - 1.1 a pulsed source current (body diode) (note 8 ) i sm - 3.1 a thermal characteristics characteristic symbol value unit power dissipation (note 6 ) linear derating factor p d 625 5 mw mw/c power dissipation (note 7 ) linear derating factor p d 806 6.4 mw mw/c thermal resistance, junction to ambient (note 6 ) r ja 200 c/w thermal resistance, junction to ambient (note 7 ) r ja 155 c/w thermal resistance, junction to leads (note 9 ) r jl 194 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 6 . for a device surface mounte d on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions 7 . for a device surface mounted on fr4 pcb measured at t 5 secs. 8 . repetitive rating 25mm x 25mm fr4 pcb, d=0.05 pulse width=10s - pulse current limited by maximum junction temperature. 9 . thermal resistance from junction to solder - point (at the end of the drain lead).
zxmp10a13f document num ber: ds33596 rev. 4 - 2 3 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f thermal characteristics 1 10 100 10m 100m 1 10 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
zxmp10a13f document num ber: ds33596 rev. 4 - 2 4 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f electrical charac teristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics drain - source breakdown voltage bv dss - 100 ? ? d = - 250 a, v gs = 0v zero gate voltage drain current i dss ? ? ds = - 100v, v gs = 0v gate - source leakage i gss ? ? gs = ? ds = 0v on characteristics gate threshold voltage v gs(th) - 2.0 ? d = - 250 a, v ds = v gs static drain - source on - resistance (note 10 ) r ds (on) ? ? ? gs = - 10v, i d = - 0.6a 1.45 v gs = - 6 .0 v, i d = - 0.5a forward transconductance (notes 10 and 1 2 ) g fs ? ? ds = - 15v, i d = - 0.6a diode forward voltage (note 10 ) v sd ? j = + 25c, i s = - 0.75a, v gs = 0v reverse recovery time (note 1 2 ) t rr ? ? j = + 25c, i f = - 0.9a, di/dt = 100a/ s reverse recovery charge (note 1 2 ) q rr ? ? dynamic characteristics (note 1 2 ) input capacitance c iss ? ? ds = - 50v , v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? d(on) ? ? dd = - 50v, i d = - 1 .0 a, r g ? ? ?? gs = - 10v turn - on rise time (note 1 1 ) t r ? ? d(off) ? ? f ? ? g ? ? ds = - 50v, v gs = - 5 .0 v, i d = - 0.6a total gate charge (note 1 1 ) q g ? ? ds = - 50v, v gs = - 10v, i d = - 0.6a gate - s ource charge (note 1 1 ) q gs ? ? gd ? ? notes: 10 . measured under pulsed conditions. pulse w idth = 300 s. duty cycle 2%. 11 . switching characteristics are independent of operating jun ction temperature. 12 . for design aid only, not subject to production testing.
zxmp10a13f document num ber: ds33596 rev. 4 - 2 5 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f typical characteristics 0.1 1 10 1e-3 0.01 0.1 1 10 0.1 1 10 1e-3 0.01 0.1 1 10 3 4 5 0.01 0.1 1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 10v 5v 4.5v -v gs 3.5v 7v 4v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4.5v 4v 3v 7v 10v 3.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = - 0.6a v gs(th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 4.5v 10v 4v 5v 7v 3.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance ??? -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1 2 3 4 5 6 7 8 typical transfer characteristics -v , gate-source voltage (v) gs - i , d r a i n c u r r e n t ( a ) d t = 125c a t = 150c a t = -55c a t = 25c a t = 85c a v = 10v ds
zxmp10a13f document num ber: ds33596 rev. 4 - 2 6 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f typical characteristics (cont.) test circuits 0.1 1 10 100 0 50 100 150 200 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0 1 2 3 4 0 2 4 6 8 10 i d = -0.6a v ds = -50v gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v)
zxmp10a13f document num ber: ds33596 rev. 4 - 2 7 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layo ut please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a ? all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x e y c z
zxmp10a13f document num ber: ds33596 rev. 4 - 2 8 of 8 www.diodes.com april 2015 ? diodes incorporated zxmp10a13f important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the la ws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorpor ated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized ap plication, customers shall indemnify and hold diodes incor porated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in engl ish but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized f or use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intend ed to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they h ave all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemni fy diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com


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ZXMP10A13FQTA
07AH4940
Diodes Incorporated Mosfet, Aec-Q101, P Ch, -100V, -0.7A Rohs Compliant: Yes |Diodes Inc. ZXMP10A13FQTA 500: USD0.415
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07AH4941
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ZXMP10A13FQTADICT-ND
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ZXMP10A13FQTA
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V36:1790_06708118
Diodes Incorporated Trans MOSFET P-CH 100V 0.7A Automotive AEC-Q101 3-Pin SOT-23 T/R 24000: USD0.1859
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Future Electronics

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Diodes Incorporated Single P-Channel 100 V 1.45 Ohm 3.5 nC 806 mW Silicon SMT Mosfet - SOT-23 15000: USD0.196
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Verical

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69700609
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68412914
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TME

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Ameya Holding Limited

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Diodes Incorporated Single P-Channel 100 V 1.45 Ohm 3.5 nC 806 mW Silicon SMT Mosfet - SOT-23 RFQ
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Avnet Asia

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New Advantage Corporation

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