elektronische bauelemente sms318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 27-sep-2013 rev. e page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 so t -23 rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage mechanical data ? case: sot-23 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: solderable per mil-std-202, method 208 ? lead free plating(matte tin finish annealed over alloy 42 leadframe) ? terminal connections: see diagram ? weight: 0.008 grams (approximate) marking product marking code sms318 h03 / ss package information package mpq leader size sot-23 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 50 v continuous gate-source voltage v gss 20 v continuous drain current i d 220 ma power dissipation p d 350 mw thermal resistance, junction to ambient r ja 357 c/w junction and storage temperature range t j , t stg 150, -55~150 c millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente sms318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 27-sep-2013 rev. e page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions off characteristics 2 drain-source breakdown voltage v (br)dss 50 - - v v gs = 0, i d = 250 a gate-body leakage current i gss - - 100 na v gs =20v, v ds =0 - - 0.5 a v gs =0, v ds =50v zero gate voltage drain current i dss 100 na v gs =0, v ds =30v on characteristics 2 gate threshold voltage 1 v gs(th) 0.8 - 1.5 v v ds = v gs , i d =1ma - - 3.5 v gs =10v, i d =0.22a static drain-source on resistance 1 r ds(on) - - 6 ? v gs =4.5v, i d =0.22a forward transconductance 1 g fs 120 - - ms v ds =10v, , i d =0.22a dynamic characteristics 2 input capacitance c iss - 27 - output capacitance c oss - 13 - reverse transfer capacitance c rss - 6 - pf v ds =25v, v gs =0, f=1mhz switching characteristics turn-on delay time 1,2 td (on) - - 5 rise time 1,2 tr - - 18 turn-off delay time 1,2 td (off) - - 36 fall time 1,2 tr - - 14 ns v dd =30v, v ds =10v, i d =0.29a, r gen =6 ? , drain-source body diode characteristics body diode forward voltage 1 v sd - - 1.4 v v gs =0, i s =0.44a notes: 1. pulse test ; pulse width 300 s, duty cycle 2%. 2. these parameters have no way to verify.
elektronische bauelemente sms318 220ma, 50v, r ds(on) 3.5 ? n-channel enhancement mosfet 27-sep-2013 rev. e page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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