2008. 9. 8 1/2 semiconductor technical data kds112 silicon epitaxial type diode revision no : 2 vhf tuner band switch applications. features h small package. h small total capacitance : c t =1.2pf(max.). h low series resistance : r s =0.6 ? (typ.). maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min p 0.1 max + _ + _ + _ + _ + _ p 1. anode 1 2. anode 2 3. cathode 3 2 1 electrical characteristics (ta=25 ? ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 50 ma junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f i f =2ma - - 0.85 v reverse current i r v r =15v - - 0.1 a reverse voltage v r i r =1 a 30 - - v total capacitance c t v r =6v, f=1mhz - 0.8 1.2 pf series resistance r s i f =2ma, f=100mhz - 0.6 0.9 ? bf type name marking lot no.
2008. 9. 8 2/2 kds112 revision no : 2 10 0 forward voltage v (v) i - v f forward current i (a) f total capacitance c (pf) t reverse voltage v (v) r r t c - v forward current i (ma) 0.3 series resistance r ( ? ) 1 s 31020 r - i s f f 5 0.5 1 3 ta=25 c f=100mhz 1 0.3 0.5 1 3 35 10 20 f=1mhz ta=25 c f 0.4 0.8 1.2 1.6 2.0 2.4 f -4 10 -3 10 -2 10 -1 ta=25 c
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