description 2SC5807 is a silicon npn epitaxial transistor. it designed with high collector current and high collector dissipation. feature ?? high collector current i c =5a ?? small collector to emitter saturation voltage ?@?@ v ce(sat) =0. 2 5v typ. (@i c = 4 a,i b =100ma) ?? high collector dissipation p c = 5 00mw application for storobe ,dc/dc convertor,power amplify apprication ?q transistor ?r developing 2SC5807 for low frequency amplify application silicon npn epitaxial type outline drawing unit ?f???? note) the dimension without tolerance represent central value. maximum ratings (ta=25 ?? ) symbol parameter ratings unit v cbo collector to base voltage 50 v v ebo emitter to base voltage 6 v v ceo collector to emitter voltage 20 v i c collector current 5 i cm peak collecter current ?@ *1 10 a collector dissipation (total ?a ta=25 ?? ) 0.5 p c collector dissipation (total ?a ta=25 ?? ) ?@ *2 2 w t j junction temperature ?{ 150 ?? t stg storage temperature -55 ?`?{ 150 ?? *1 ?@ single pulse ?@ pw=10msec *2 ?@ pakkage mounted on 35mm 50mm 0.8mm ceramic board. marking ?` ?j ?p type name lot no. ?? ?e?d item terminal connecter ?d: emitter ?b: collector ?a: base eiaj : sc-62 jedec : 4.2 max e c b 4.6 max 1.6 2.5 3.0 1.5 0.53 max 0.48 max 0.8 min 1.5 0.4 marking isahaya ?@ electronics ?@ corporation
typical characteristics ?q transistor ?r developing 2SC5807 for strobe ,dc/dc convertor application silicon npn epitaxial type electrical characteristics (ta=25 ?? ) limits symbol parameter testconditions min typ max unit v (br)cbo c to b break down voltage i c = 5 0 ? a ?c i e = 0ma 50 v v (br)ebo e to b break down voltage i e = 5 0 ? a ?c i c = 0ma 6 v v (br)ceo c to e break down voltage i c =1ma ?c r be = ?? 20 v i cbo collector cut off current v cb = 4 0v ?c i e =0 ma 0.5 ? a i ebo emitter cut off current v eb = 5 v ?c i c = 0 ma 0.5 ? a ?? ?e?d dc forward current gain v ce =2v ?c i c =0.5a 120 390 - v ce(sat) c to e saturation voltage i c =4a ?c i b = 100m a 0.25 1.0 v f t gain band width product v ce =6v ?c i e =-50ma 150 mhz cob collector output capacitance v cb =20v ?c i e =0ma ?c f=1mhz 30 pf * ?@ measured using pulse current. * ?@ it shows ?? ?e?d classification in right table. marking ?p ?q ?? ?e?d 120 to 270 180 to 390 c ommon emitter transfer 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 b ase to emitter voltage ?@?u ?a?d ?i?u?j c ollecter current ?@?h ?b ?i?`?j vce=2v ta=100?? 25?? -25?? c ommon emitter output 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 collecter to emitter voltage ?@?u ?b?d ?i?u?j collecter current ?@?h ?b ?i?`?j ta=25?? ib=0ma 5ma 10ma 15ma 20ma 25ma 30ma 35ma 40?`50ma pc=2w dc forward current gain vs. collecter current (?t) 10 100 1,000 10,000 0.001 0.01 0.1 1 10 c ollecter current ?@?h ?b ?i?`?j d c forward current gain ?@?? ?e?d ta=25?? vce=5v 2v 1v dc forward current gain vs. collecter current (?u) 10 100 1,000 10,000 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j dc forward current gain?@?? ?e?d vce=1v ta=100?? 25?? -25?? isahaya ?@ electronics ?@ corporation
?q transistor ?r developing 2SC5807 for strobe ,dc/dc convertor application silicon npn epitaxial type dc forward current gain vs. collecter current (?v) 10 100 1,000 10,000 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j dc forward current gain?@?? ?e?d vce=2v ta=100?? 25?? -25?? collecter to emitter saturation voltage vs. collecter current(?u) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j collecter to emitter saturation voltage?@?u ?b?d?i???????j ?i?u?j ic/ib=10 ta=100?? -25?? 25?? collecter to emitter saturation voltage vs. collecter current(?v) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j collecter to emitter saturation voltage?@?u ?b?d?i???????j ?i?u?j ic/ib=30 ta=100?? -25?? 25?? collecter to emitter saturation voltage vs. collecter current(?w) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j collecter to emitter saturation voltage?@?u ?b?d?i???????j ?i?u?j ic/ib=40 ta=100?? -25?? 25?? collecter to emitter saturation voltage vs. collecter current(?x) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 collecter current ?@?h ?b ?i?`?j collecter to emitter saturation voltage?@?u ?b?d?i???????j ?i?u?j ic/ib=50 ta=100?? -25?? 25?? collecter to emitter saturation voltage vs. collecter current(?t) 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 collecter current?@?h ?b ?i?`?j collecter to emitter saturation voltage?@?u ?b?d?i???????j ?i?u?j ta=25?? ic/ib=50 40 30 10 isahaya ?@ electronics ?@ corporation
?q transistor ?r developing 2SC5807 for strobe ,dc/dc convertor application silicon npn epitaxial type a rea of safety operation 0.01 0.1 1 10 100 0.1 1 10 100 1000 collecter to emitter voltage ?@?u ?b?d ?i?u?j collecter current ?@?h ?b ?i?`?j dc pw=1sec pw=100mse pw=10msec pw=1msec icmax(pulse) icmax(pulse) ta=25?? single pulse mounted on recommended mount pad isahaya ?@ electronics ?@ corporation
marketing division, marketing planning departme nt 6 - 41 tsukuba, isahaya, nagasaki, 854 - 0065 japan keep safety first in your circuit designs! isahaya electronics corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropri ate measures such as ( 1) placement of substitutive, auxiliary, ( 2) use of non - farmable material or ( 3) prevention against any malfunct ion or mishap. notes regarding these materials these materials are intended as a reference to our customers in the selection of the isah aya products best suited to the customer?s application; they don't convey any license under any intellectual prop erty rights, or any other rights, belonging isahaya or third party. isahaya electronics corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagram s, charts or circuit application examples contained in these materials . all information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, a nd are subject to change by isahaya electronics corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact isahaya electronics corporation or an authorized isahaya products distr ibutor for the latest product information before purchasing product listed herein. isahaya electronics corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human lif e is potentially at stake. please contact isahaya electronics corporation or an authorized isahaya products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transpor tation, vehicular, medical, aerospace, nuclear, or undersea repeater use. the prior written approval of isahaya electronics corporation is necessary to reprint or reproduce in whole or in part these materials. if these products or technolo gies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to t he export control laws and regulations of japan and/or the country of destination is prohibited. please contact isahaya electronics corporation or authorized isahaya products distributor for further details on these materials or the product s contained therein. jan.2003
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