PJ2306 fea tures ? r ds(on) , v gs @10v,i ds @3.2a=65m ? r ds(on) , v gs @4.5v,i ds @2.8a=85m ? adva nced t rench proce ss te chnology ? high den sity cell de sign for ultra low on-re sista nce ? v ery low le ak age current in of f condition ? spe ci ally de signed f or loa d switch, pwm application s ? esd protected ? component are in compliance with eu rohs 2002/95/ec directives mechanical da ta ? ca se: sot -23 pa ck age ? t ermin als : soldera ble per mil-st d-750,method 2026 ? marking : 06 30v n-channel enhancement mode mosfet - esd protected m axi mum ra tings a nd thermal chara cteristics (t a =25 o c unle ss otherwise noted ) note: 1. m axi mum dc current li mited by the pa ck age 2. surfa ce mounted on fr4 board, t < 5 se c pa ra me te r s ym b o l l i mi t uni ts d r a i n-s o urc e vo lta g e v d s 3 0 v ga te -s o urc e vo lta g e v gs + 2 0 v c o nti nuo us d ra i n c urre nt i d 3 .2 a p uls e d d ra i n c ur re nt 1 ) i d m 1 6 a m a xi m um p o we r d i s s i p a ti o n t a =2 5 o c t a =7 5 o c p d 1 .2 5 0 .7 5 w op e ra ti ng j unc ti o n a nd s to ra g e te m p e ra ture ra ng e t j ,t s tg -5 5 to + 1 5 0 o c junction-to ambient thermal resistance(pcb mounted) 2 r j a 1 0 0 o c /w 3 1 g to p vi e w s d 2 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics v dd v out v in r g r l switching test circuit gate charge test circuit v dd v gs r g r l 1ma note : plus te st : pluse w idth < 300us, duty cycle < 2%. p a r a m e te r s ym b o l te s t c o nd i ti o n mi n. typ . m a x. uni ts s ta ti c d r a i n-s o urc e b re a k d o wn vo lta g e b v d s s v gs =0 v, i d = 2 5 0 ua 3 0 v ga te thre s ho ld vo lta g e v gs (t h) v d s =v g s , i d =2 5 0 ua 1 2 .5 v d r a i n-s o urc e on-s ta te re s i s ta nc e r d s (o n) v gs =4.5v, i d =2.8a 7 2 8 5 m r d s (o n) v gs =10v, i d =3.2a 55 65 ze r o ga te vo lta g e d r a i n c urre nt i d s s v ds =24v, v gs =0v 1 ua gate body leakage i gs s v g s =+ 1 6 v, v d s =0 v + 1 0 ua forward transconductance g f s v d s =4 .5 v, i d =2 .8 a 3 s d i o d e f o rwa r d vo lta g e v s d i s =2 .8 a , v gs =0 v 0 .8 8 1 .2 v dynamic to ta l ga te c ha r g e q g v d s =1 5 v, i d = 3 .2 a ,v gs =5v 2 .8 3 .5 nc v d s =1 5 v, i d =3 .2 a v gs =10v 5.0 6.5 ga te -s o ur c e c ha rg e q g s 0 .5 ga te -gra i n c ha rg e q g d 1 .1 turn-on d e la y ti me t d (o n) v dd =15v , r l =15 i d =1a , v gen =10v r g =6 8.6 11.2 ns ri s e ti me t r 1 2 .8 1 6 .8 turn-off d e la y ti me t d (o ff ) 18.6 26 f a ll ti me t f 1 .9 2 .6 inp ut c a p a c i ta nc e c i s s v d s =1 5 v, v gs =0 v f= 1 .0 mh z 2 7 0 p f outp ut c a p a c i ta nc e c o s s 45 re ve rs e tr a ns fe r c a p a c i ta nc e c rs s 30 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com PJ2306 product specification
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