, l/ nc, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf push-pull power transistor BLV948 features ? double input and output matching for easy matching and high gain ? poly-silicon emitter-ballasting resistors for an optimum temperature profile ? gold metallization ensures excellent reliability. description two npn silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-ab operation in base station transmitters in the 800 to 960 mhz range. the transistor is encapsulated in a 4-lead sot262a2 flange envelope, with two ceramic caps. the ftanga provides the common emitter connection for both transistors. pinning - sot262a2 pin 1 2 3 4 5 description collector 1 collector 2 base 1 base 2 emitter (connected to flange) quick reference data rf performance at th = 25 c in a common emitter test circuit. mode of operation cw, class-ab 2-tone, class-ab f (mhz) 900 960 900 960 vce (v) 26 26 26 26 pl (w) 150 150 150 (pep) 150 (pep) qp (db) 27 26.5 27.5 s7.5 1e (%) >48 245 234 234 ?3 (dbc) - - s-24 -22 warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo discs are not damaged. all parsons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. 5 \. i l i 5 3 4 top view msbom fig.1 simplified outline and symbol. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
uhf push-pull power transistor BLV948 limiting values in accordance with the absolute maximum rating system (iec 134). per transistor section unless otherwise specified. symbol vc0o y vbo ic 'ciav) p? t-, t, parameter collector-base voltage collector-emitter voltage emitter-base voltage dc collector current average collector current total power dissipation storage temperature junction temperature conditions open emitter open base open collector t^ = 25 c; total device; both sections equally loaded win. - - - - - ? -65 - max. 60 28 3 12.5 12.5 320 150 200 unit v v v a a w "c c thermal resistance symbol ^?i i-mb "lh rr*-h parameter thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink conditions pb, = 320 w; t^ = 25 c; total device, both sections equally loaded total device; both sections squally loaded thermal resistance max. 0.55 k/w max. 0.15 k/w so 'c (a) 10 1 (dtrt = (2)th = 7 total dev \ " ~\< 2\) \ v , 10 vce(v) ' 25 c. '0c. ice; both sections equally loaded. fig.2 dc soar. "to,360 (w)300 50 200 160 100 50 0 c (1)contin (2) short- total devl fig.: mea0w ~v v. ^ s. ^^ n "^ ^>> "x, (1) ^^ ^ >^ 's (2) "^. v ^ ?*^ kh- ^ "x ^ ^v. ">>, 20 40 60 80 100 120 th uous operation, ime operation during mismatch. :e; both sections equally loaded. 3 power/temperature derating curve.
uhf push-pull power transistor BLV948 characteristics tj = 25 c unless otherwise specified. per transistor section unless otherwise specified. symbol ^(bfllcbo vibriceo v(bh)ebo 'ces hre acvj ce parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter cut-off current dc current gain dc current gain ratio of both sections collector capacitance (notel) conditions open emitter; lc = 60 ma open base; lc = 150 ma open collector; ie = 3 ma v8e = 0;vce = 25v ic=1.5a;voe=10v ic=1.sa;vce=10v u = i* = n; vce = 25 v; f = 1 mhz win. 60 28 3 - 30 0.67 - typ. - - - - - - bo max. - - - 10 120 1.5 90 unit v v v ma pf note 1. value cc is that of the die only, it is not measurable because of the internal matching network. 100 hfe eo 60 40 20 0 vce =10 flg.4 mftciif y^ ,? ? ? ? ? ? ? _ _ - ? ^ 8 ic(ma) 12 v. dc current gain as a function of collector current, typical values. cc350 '^300 250 200 150 100 50 0 ( le = i, = c fig.s c u/w3u \. ?^ ?* ~ ? !? ? _ ) 10 20 30 40 vcb uhf push-pull power transistor BLV948 10 ig (a) 1 0.1 0.01 c vce = 25 0)th=- (2)th- f (v // / / // // #= it // / 3^" js^s^ /m ^^-?h wrajib ? t 0.5 1 1.6 2 2.5 vbe(v) v. 70 c. 25 c. g.6 collector current as a function of :ase emitter voltage, typical values. application information rf performance at th = 25 c in a common emitter test circuit. fl, ?.-,, = 0.15 k/w. mode of operation cw, dass-ab f (mhz) 900 960 vce (v) 26 26 icq (ma) 2x100 2x100 pl 7 typ. 8.3 >6.5 typ. 7,9 lie (%) >48 typ. 53 >45 typ. 50 ruggedness in class-ab operation the BLV948 is capable of withstanding a load mismatch corresponding to vswr - 2:1 through all phases under the following conditions: vc6 = 26 v; th = 25 c; r1h ^^ = 0.15 k/w; pl = 150 w; f = 960 mhz.
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