copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 1 /5 samwin features high ruggedness r ds( on ) (max 8m ? )@v gs =10v gate charge ( typ 126nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 75 v i d continuous drain current (@t c =25 o c) 75 * a continuous drain current (@t c =100 o c) 70 * a i dm drain current pulsed (note 1) 28 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 1004 mj e ar repetitive avalanche energy (note 1) 45 mj dv/dt peak diode recovery dv/dt (note 3) 7 v/ns p d total power dissipation (@t c =25 o c) 312 w derating factor above 25 o c 2.5 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit r thjc thermal resistance, junction to case 0.4 o c/w r thcs thermal resistance, case to sink 0.5 o c /w r thja thermal resistance, junction to ambient 60 o c /w bv dss : 75v i d : 75a r ds(on) : 8 m ? 1. gate 2. drain 3. source 1 2 3 SW75N75 item sales type marking package packaging 1 sw p 75n75 sw 75n75 to - 220 tube order codes *. drain current is limited by junction temperature.
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 2 /5 samwin electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 75 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0. 07 - v/ o c i dss drain to source leakage current v ds =75v, v gs =0v - - 1 ua v ds =75v, t c =125 o c - - 20 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 20v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 37.5a 6 8 m ? g fs forward transconductance vds = 40 v, id = 37.5 a 20 s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 960 1260 pf c oss output capacitance 110 135 c rss reverse transfer capacitance 15 18 t d(on) turn on delay time v ds =60v, i d =75a, r g =25 ? (note 4 5) 37 80 ns tr rising time 67 100 t d(off) turn off delay time 72 150 t f fall time 30 80 q g total gate charge v ds =37.5v, v gs =10v, i d =75a (note 4 5) 126 180 nc q gs gate - source charge 46 - q gd gate - drain charge 47 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 75 a i sm pulsed source current - - 300 a v sd diode forward voltage drop. i s =75a, v gs =0v - - 1.5 v t rr reverse recovery time i s =75a, v gs =0v, di f /dt=100a/us - 36.5 - ns q rr breakdown voltage charge - 52 - nc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 0.36mh, i as = 75a, v dd = 50v, r g =25 ?, starting t j = 25 o c 3. i sd 75a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. SW75N75
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 3 /5 samwin fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics SW75N75 notes: 1. 250s pulse test 2. t=25 3. vgs 2~10v step=1v vgs=20v vgs=10v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 50.0 100.0 150.0 v g s , g a t e s o u r c e v o l t ag e( v ) q g , t o t a l g a t e c h a r g e ( n c ) vds=60v fig. 4. on state current vs. diode forward voltage fig 5. breakdown voltage variation vs. junction temperature fig. 6. on resistance variation vs. junction temperature 150 25 0 0.5 1 1.5 2 2.5 -70 -45 -20 5 30 55 80 105 130 155 180 rdson, (normalized drain - source on resistance tj junction temperture 0.8 0.9 1 1.1 1.2 -70 -45 -20 5 30 55 80 105 130 155 180 bvdss, (normalized drain - source breakdown voltage tj junction temperture
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 4 /5 samwin SW75N75 fig. 7 . maximum safe operating area fig. 8 . transient thermal response curve v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut dut v gs 4ma q g q gs q gd v gs charge nc 10v
copyright@ semipower electronic technology co., ltd. all rights reserved. o ct . 2012. rev. 3.0 5 /5 samwin fig. 11 . unclamped inductive switching test circuit & waveform SW75N75 fig. 12 . peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
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