u , li ne. 20 springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IFN860 dual n-channel silicon junction field-effect transistor low-noise audio amplifier equivalent to crystalonics cd860 absolute maximum ratings at ta = 25c reverse gate source & reverse gate drain voltage - 20 v continuous forward gate current 50 ma continuous device power dissipation 400 mw power derating 2.3 rnwfc storage temperature range - 65c to 200"c at 25cc free air temperature: static electrical characteristics gate source breakdown voltage gate reverse leakage voltage gate source cutoff voltage drain saturation current (pulsed) differential gate source voltage v(br)gss igss vgs(off) 'dss ivgs1~ vgs2 IFN860 mm -20 -0.3 10 typ max 3 -3 25 process nj450l unit v na v ma mv test conditions ig = - 1 ua, vds = 0v vgs = -10v, vds = 0v vds = 10v, ld = 100ua vds = 10v, vgs = 0v vds = 10v, !d=100ua dynamic electrical characteristics transconductance common source input capacitance common source reverse transfer capacitance equivalent short circuit input noise voltage 9m hss crss gn 25 40 30 17 35 20 2 ms pf pf nv/\hz vds = 10v, ld = -10ma vds = 10v, id = - 10 ma vds = 10v, id = -10ma vdg-3v, id = 10ma f = 1 khz f = 1 mhz f = 1 mhz f = 1 khz to71 seating plane oj6jq, .019 < (dim a) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
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