msf6n 65 n - channel enhancement mode power mosfet publication order number: [ msf 6 n 65 ] ? bruckewell technology corporation rev. a - 2014 description the msf 6 n 65 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all co mmercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package a pplication ? open framed power supply ? adapter ? stb packing & order information 50/tu be ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 650 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 6.0 a drain current - continuous (tc= 100 c ) 3.6 a i dm drain current pulsed 24 a i ar avalanche current 6.0 a e as s ingle pulsed avalanche energy 135 mj e ar repetitive avalanche energy 5.4 mj dv/dt peak diode recovery dv/dt 4.5 v/ns
msf6n 65 n - channel enhancement mode power mosfet publication order number: [ msf 6 n 65 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum rating s symbol parameter value unit t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c tpkg maximum temperature for soldering @ package body for 10 seconds 260 c p d total power dissipation ( tc = 25 c) derating factor above 25 c 54 w 0.3 w/ c t stg operating and storage temperature range - 55 to +150 c t j storage temperature 150 c notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 7 a, v dd =5 0v, l=7mh, v g = 10v , starting t j =25 3. i sd Q 7a , di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 thermal c haracteristics symbol parameter max. unit s r jc thermal resistance, junction - to - case 2.3 c /w r ja thermal resistance, junction - to - ambient 62.5 static characteristics symbol paramete r test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d = 250a 600 -- -- v b v dss / t j breakdown voltage temperature coefficient i d = 250a, referenced to 25 c -- 0.65 -- v/ c v gs (th) gate threshold voltage v ds = v gs , i d = 250a 2.0 -- 4.0 v i dss zero gate voltage drain current v ds = 65 0 v , v gs = 0 v v ds = 54 0 v , t c = 125 c -- -- 1 10 a i gss gate - body leakage forward v gs = 3 0 -- -- 100 n a r ds(on) static drain - source on - resistance v gs = 10 v , i d = 3.0 a -- 1.23 1.5 dynamic characteristics symbol parameter test conditions min typ. max. unit s q g total gate charge v ds = 52 0 v,i d = 6 a , v gs = 10 v -- 19 -- nc q gs gate - source charge -- 5.1 -- nc q g d gate - drain charge -- 6.9 -- nc
msf6n 65 n - channel enhancement mode power mosfet publication order number: [ msf 6 n 65 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 325 v, i d = 6 a, r g = 25 , v g s = 1 0 v -- 12 -- ns t r turn - on time -- 13 -- ns t d(off) turn - off delay time -- 25 -- ns tf turn - off fall time -- 13 -- ns c iss input capa citance v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 1350 -- pf c oss output capacitance -- 120 -- pf c rss reverse transfer capacitance -- 26 -- pf source - drain diode symbol parameter test conditions min typ. max. unit s i s v d = v g = 0 v s = 1.3 v -- -- 6.0 a i sm -- -- 24 v sd i s = 6 a , v gs = 0 v -- -- 1.5 v t rr i f = 6 a , v gs = 0 v dif/dt=100a/s -- 330 -- ns q rr -- 2.8 -- c notes; 1 . pulse test: pulse width Q 300 s, duty cycle Q 2%
msf6n 65 n - channel enhancement mode power mosfet publication order number: [ msf 6 n 65 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in a ny datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the prod ucts for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability , including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of product s for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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