MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 description the msf 2n6 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all co mmercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package application ? open framed power supply ? adapter ? stb packing & order information 50/tub e ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v dss drain - source voltage 600 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 2.0 a drain current - continuous (tc= 100 c ) 1.3 a i dm drain current pulsed 8.0 a e as s ingle pulsed avalanche energy 120 mj e ar repetitive avalanche energy 5.4 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j ,t stg operating and storage temperature range - 55 to +150 c
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d total power dissipation ( tc = 25 c) derating factor above 25 c 23 w 0.18 w/ c t l maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 c ? drain cu rrent limited by maximum junction temperature thermal characteristics (tc=25c unless otherwise noted) symbol parameter max. unit s rthjc junction - to - case 5.5 c /w r ja junction - to - ambient 62.5 on characteristics symbol parameter test conditions min typ. max. unit s v gs gate threshold voltage v ds = v gs ,i d = 250a ds(on) static drain - source on - resistance v gs = 10 v,i d = 3.5 a -- 4.0 4.7 off chara cteristics symbol parameter test conditions min typ. max. unit s b v dss drain - source breakdown voltage v gs = 0 v , i d =250a dss / j breakdown voltage temperature coefficient i d = 250a, referenced to 25 dss zero gate vol tage drain current v ds = 60 0 v , v gs = 0 v v ds = 48 0 v , t c = 125 c -- -- 10 100 a gss f gate - body leakage current, forward v gs = 3 0 v , v d s = 0 v -- -- 100 n a i gssr gate - body leakage current, reverse v gs = - 3 0 v , v d s = 0 v -- -- - 100 n a dynamic char acteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds = 25 v, v gs = 0 v, f= 1.0mhz -- 320 420 pf c oss output capacitance -- 35 46 pf c rss reverse transfer capacitance -- 4.5 6.0 pf q g total gate charge v ds = 48 0 v,i d = 2 a , v gs = 10 v -- 9.5 13 q gs gate - source charge -- 1.6 -- q g d gate - drain charge -- 4.0 --
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 dynamic characteristics symbol parameter test conditions min typ. max. unit s t d(on) turn - on time v ds = 30 0 v, i d = 2 a, r g = 25 r turn - on time -- 23 60 ns t d(off) turn - off delay time -- 25 60 ns tf turn - off fall time -- 28 70 ns source - drain diode maximum ratings and characteristics symbol parameter test conditions min typ. max. unit s i s continuous source - dr ain diode forward current -- -- 2.0 a i sm ism pulsed source - drain diode forward current -- -- 6.0 v sd source - drain diode forward voltage i s = 2 a , v gs = 0 v -- -- 1.4 v t rr reverse recovery time i s = 2 a , v gs = 0 v dif/dt=100a/s rr re verse recovery charge -- 1.0 -- notes; 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=55mh, i as = 2 a, v dd =5 0 v, r g =25 , starting t j =25 3. i sd Q 2 a, di/dt Q 2 00a/ s,v dd Q bv dss , starting t j =25 4. pulse test: pulse width Q 300 s , duty cycle Q 2% 5. essentially independent of operating temperature
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forwar d voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig 12. resistive switching test circuit & waveforms fig 13. gate charge t est circuit & waveform fig 14. unclamped inductive switching test circuit & waveforms
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & waveforms
MSF2N60 6 00v n - channel mosfet publication order number: [ msf 2n 6 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracie s or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production o f any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incid ental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to valid ate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary ov er time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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