p age:p2-p1 plastic-encapsulate transistors features ? excellent h fe linearity ? high h fe ? low noise ? complementary to kta2014 maximum ratings ( ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current -continuous i c 0.15 a collector power dissipation p c 0.1 w junction temperature t j 150 storage temperature t stg -55to +150 electrical characteristics ( @ ta=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v cbo i c = 10 0 a, i e =0 60 v collector-emitter breakdown voltage v ceo i c = 1ma, i b =0 50 v emitter-base breakdown voltage v ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a dc current gain h fe v ce = 6v, i c =2ma 70 700 collector-emitter saturation voltage v cesat i c =100ma, i b = 10ma 0.25 v transition frequency f t v ce =10v, i c = 1ma 80 mhz collector output capacitance c ob v ce =10v, i e =0, f=1mhz 3.5 pf noise figure nf v ce =6v,i e =0.1ma, f=1khz,r g =10 k? 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 marking lo ly lgr lbl KTC4075 (npn) 1. base 2. emitter sot-23 3. collecto mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
p age:p2-p2 plastic-encapsulate transistors KTC4075 typical characteristics mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
|
