1 www.fairchildsemi.com ?2005 fairchild semiconductor cor poration FFPF10UP30ST rev . a FFPF10UP30ST 10 a, 300 v, ultrafast diode FFPF10UP30ST ? ultrafast recovery t rr = 45 ns (@ i f = 10 a) ? max forward voltage, v f = 1.4 v (@ t c = 25c) ? reverse voltage, v rrm = 300 v ? avalanche energy rated ? rohs compliant applications ? general p urpose ? switching mode power supply ? free-wheeling d iode for motor a pplication ? power switching circuits absolute maximum ratings (per diode) t a = 25c unless otherwise noted thermal characteristics t a = 25c unless otherwise noted symbol parameter value unit v rrm peak repetitive reverse voltage 300 v v rwm working peak reverse voltage 300 v v r dc blocking voltage 300 v i f(av) average rectified forward current @ t c = 125 c1 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 100 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 4.0 c/w 1. cathode 2. anode 1 to-220f 12 1. cathode 2. anode features tm september 2005 10 a, 300 v, ultrafast diode the ffpf10up30s is an ultrafast diode with low forward voltage drop and rugged uis capability. this dev ice is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power s witching applications. it is specially suited for us e in switc hing power supplies and industrial applicationa as welder and ups application.
2 www.fairchildsemi.com FFPF10UP30ST 10 a, 300 v, ultrafast diode electrical characteristics (per diode) t a = 25c unless otherwise noted * p uls e test: pulse width=300 s, duty cycle=2% symbol parameter min. typ. max. unit v f * i f = 10 a i f = 10 a t c = 25 c t c = 150 c - - - - 1.4 1.2 v v i r * v r = 300 v v r = 300 v t c = 25 c t c = 150 c - - - - 100 500 a a t rr i f =1 a, di/dt = 100 a/s, v cc = 30 v i f =10 a, di/dt = 200 a/s, v cc = 195 v t c = 25 c t c = 25 c - - - - 35 45 ns ns t a t b q rr i f =10 a, di/dt = 200 a/s, v cc = 195 v t c = 25 c t c = 25 c t c = 25 c - - - 11 13 20 - - - ns ns nc w avl avalanche energy (l = 20 mh) 20 - - mj ?2005 fairchild semiconductor cor poration FFPF10UP30ST rev . a
3 www.fairchildsemi.com FFPF10UP30ST 10 a, 300 v, ultrafast diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.1 1 10 20 0.0 0.5 1.0 1.5 2.0 t c = 25 o c t c = 100 o c forward voltage , v f [v] forward current , i f [a] 0 50 100 150 200 250 300 0.001 0.01 0.1 1 10 t c = 25 o c t c = 100 o c reverse current , i r [ a] reverse voltage , v r [v] 0.1 1 10 100 10 100 400 typical capacitance at 0v = 197. 2 pf capacitance , cj [pf] reverse voltage , v r [v] 100 200 300 400 500 24 28 32 36 i f = 10a tc = 25 o c reverse recovery time , t rr [ns] di/dt [a/ s] 100 200 300 400 500 0 1 2 3 4 5 i f = 10a t c = 25 o c reverse recovery current , i rr [a] di/dt [a/ s] 100 110 120 130 140 150 0 2 4 6 8 10 12 14 average rectified forward current, i f(av) [a] case temperature, t c [ o c] dc ?2005 fairchil d semiconductor cor poration FFPF10UP30ST rev . a
package demensions dimensions in millimeters FFPF10UP30ST 10 a, 300 v, ultrafast diode to-220f 2l 2.54 0.20 0.80 0.10 0.35 0.10 2.76 0.20 max1.47 (1.00x45) (0.70) 3.30 0.10 15.87 0.20 (1.80) (6.50) 6.68 0.20 15.80 0.20 9.75 0.30 12.00 0.20 4.70 0.20 10.16 0.20 9.40 0.20 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 ?2005 fairchil d semiconductor cor poration FFPF10UP30ST rev . a 4 www.fairchildsemi.com
5 www.fairchildsemi.com FFPF10UP30ST 10 a, 300 v, ultrafast diode ?2005 fairchil d semiconductor cor poration FFPF10UP30ST rev . a
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